Divalent tin oxides have attracted considerable attention as novel p-type oxide semiconductors, which are essential for realizing future oxide electronic devices. Recently, p-type Sn2Nb2O7 and SnNb2O6 were developed; however, enhanced hole mobility by reducing defect concentrations is required for practical use. In this work, we investigate the correlation between the formation of oxygen vacancy which may reduce the hole-generation efficiency and hole mobility, and the crystal structure in Sn-Nb complex oxides. Extended X-ray absorption fine structure spectroscopy and Rietveld analysis of x-ray diffraction revealed the preferential formation of oxygen vacancy at the O site bonded to the Sn ions in both the tin niobates. Moreover, a large amount of oxygen vacancy around the Sn ions were found in the p-type Sn2Nb2O7, thereby indicating the effect of oxygen vacancy to the low hole-generation efficiency. The dependence of the formation of oxygen vacancy on the crystal structure can be elucidated from the Sn-O bond strength that is evaluated based on the bond valence sum and Debye temperature. The differences in the bond strengths of the two Sn-Nb complex oxides are correlated through the steric hindrance of Sn2+ with asymmetric electron density distribution. This suggests the importance of the material design with a focus on the local structure around the Sn ions to prevent the formation of oxygen vacancy in p-type Sn2+ oxides.
We systematically study the dissociation of H2 molecules on the β-Ga2O3 (100)B surface, with the influences of surface oxygen vacancy being considered. After introducing the surface oxygen vacancy, the nearest topmost O(I) atom becomes very active, and hydrogen molecules become much easier to dissociate.
An analytical result has been obtained for the value of the dynamical charge necessary for calculations of oxygen vacancy kinetics in dielectric perovskite-type crystals. It is shown by using the Berry phase analysis that this charge equals the nominal charge of the vacancy: for example, for the double charged state, it is 2; a neutral vacancy has the zero charge.
The oxygen vacancy is a crucial intrinsic defect in metal-ultrathin oxide semiconductor heterostructures, and its formation at an interface is of great importance in determining the device performance and degradation. This paper presents an ab initio thermodynamic study of oxygen vacancies at metal/oxide interfaces. Electronic energies and entropies are calculated for defective interface systems, as a function of interface-vacancy distance. The study indicates that oxygen vacancies near the interface modify its bonding structure, and significantly change the thermodynamic properties of the sys…
Vacancy defects in thin film laser ablated SrTiO3 on SrTiO3 were identified using variable energy positron annihilation lifetime measurements. Strontium vacancy related defects were the dominant positron traps and, apart from in the top ~ 50 nm, were found to be uniformly distributed. The surface layer showed an increase in annihilation from larger open-volume defects, large vacancy clusters or nanovoids.
Phonons are produced when an excited vacancy in cuprous oxide (Cu$_2$O) relaxes. Time resolved luminescence was used to find the excited copper vacancy (acceptor) and oxygen vacancy (donor) trap levels and lifetimes. It was also used to determine the typical energy and number of phonons in the phonon pulses emitted by vacancies. The vacancy properties of cuprous oxide are controlled by several synthesis parameters and by the temperature. We directly demonstrate the absorption of light by oxygen vacancies with transient absorption. Copper and oxygen vacancies behave differently, in part because…
We have synthesized highly oxygen deficient HfO$_{2-x}$ thin films by controlled oxygen engineering using reactive molecular beam epitaxy. Above a threshold value of oxygen vacancies, p-type conductivity sets in with up to 6 times 10^{21} charge carriers per cm3. At the same time, the band-gap is reduced continuously by more than 1 eV. We suggest an oxygen vacancy induced p-type defect band as origin of the observed behavior.
We investigated the role of oxygen vacancy in n-type interface of LaAlO3 (LAO) overlayer on SrTiO3 (STO) (001) by carrying out density-functional-theory calculations. Comparing the total energies of the configurations with one vacancy in varying locations we found that oxygen vacancies favor to appear first in LAO surface. These oxygen vacancies in the surface generate a two-dimensional distribution of carriers at the interface, resulting in band bending at the interface in STO side. Dependent on the concentration of oxygen vacancies in LAO surface, the induced carrier charge at the interface …
The optoelectronic properties induced by oxygen vacancy defects in MgO(111) monolayers have been studied using hybrid level of DFT method. HSE calculations shows significant reduction in electronic band gap of MgO monolayer as a result of introduction of oxygen vacancies. The pristine monolayer has a wide band gap (4.84 eV, indirect) semiconducting behaviour, which changes gap to 2.97 eV (indirect) and 2.28 eV (direct) with increment in oxygen vacancy defect concentration of 6.25% and 12.5%,respectively. Consequently, presence of oxygen vacancies leads to energy red shift of the observed optic…
Oxygen vacancy formation energy is an important quantity for enabling fast oxygen diffusion and oxygen catalysis in technologies like solid oxide fuel cells. Both previous literature in various systems and our calculations in LaMnO3, La0.75Sr0.25MnO3, LaFeO3, and La0.75Sr0.25FeO3, show mixed results for the direction and magnitude of the change in vacancy formation energy with strain. This paper develops a model to make sense of the different trend shapes in vacancy formation energy versus strain. We model strain effects using a set of consistent ab initio calculations, and demonstrate that ou…
Oxygen is the most common unintentional impurity found in GaN. We study the interaction between substitutional oxygen (ON) and the gallium vacancy (VGa) to form a point defect complex in GaN. The formation energy of the gallium vacancy is largely reduced in n-type GaN by complexing with oxygen, while thermodynamic and optical transition levels remain within the band gap. We study the spectroscopy of this complex using a hybrid quantum-mechanical molecular-mechanical (QM/MM) embedded-crystal approach. We reveal how a single defect center can be responsible for multiband luminescence, including …
Knowing the correlation between grain boundary mobility and oxygen potential in yttria stabilized zirconia (YSZ), we have utilized the grain size as a microstructural marker to map local oxygen potential. Abrupt oxygen potential transition is established under a large current density and in thicker samples. Cathodically depressed oxygen potential can be easily triggered by poor electrode kinetics or in an oxygen-lean environment. Widespread cavitation in the presence of highly reducing oxygen potential suggests oxygen vacancy condensation instead of oxygen bubble formation as commonly assumed …
Density functional theory (DFT) and DFT corrected for on-site Coulomb interactions (DFT+U) calculations are presented on Aluminium doping in bulk TiO$_2$ and the anatase (101) surface. Particular attention is paid to the mobility of oxygen vacancies throughout the doped TiO$_2$ lattice, as a means by which charge compensation of trivalent dopants can occur. The effect that Al doping of TiO$_2$ electrodes has in dye sensitised solar cells is explained as a result of this mobility and charge compensation. Substitutional defects in which one Al3+ replaces one Ti4+ are found to introduce valence b…
We perform full-potential screened-hybrid density-functional theory (DFT) calculations to compare the thermodynamic stability of neutral and charged states of the surface oxygen vacancy at the rutile TiO$_2$(110) surface. Solid-state (QM/MM) embedded-cluster calculations are employed to account for the strong TiO$_2$ polarization response to the charged defect states. Similar to the situation for the bulk O vacancy, the +2 charge state $V_{\rm O}^{2+}$ is found to be energetically by far most stable. Only for Fermi-level positions very close to the conduction band, small polarons may at best b…
Fourier transform deep level transient spectroscopy has been performed between 80 K and 550 K in five n-type ZnO samples grown by different techniques. The capture cross section and ionization energy of four electron traps have been deduced from Arrhenius diagrams. A trap 1 eV below the conduction band edge is systematically observed in the five samples with a large apparent capture cross section for electrons (1.6 $\pm$ 0.4 x 10 - 13 cm2) indicating a donor character. The assignment of this deep level to the oxygen vacancy is discussed on the basis of available theoretical predictions.
Despite of the tremendous efforts spent on the oxygen vacancy migration in determining the property optimization of oxygen-vacancy enrichment transition metal oxides, few has focused on their dynamic behaviors non-equilibrium states. In this work, we performed multi-timescale ultrafast X-ray diffraction measurements by using picosecond synchrotron X-ray pulses and femtosecond table-top X-ray pulses to monitor the structural dynamics in the oxygen-vacancy ordered SrCoO2.5 thin films. A giant photoinduced strain (Δc/c > 1%) was observed, whose distinct correlation with the pump photon energy ind…
We use first-principles calculations to investigate the stability of bi-axially strained \textit{Pnma} perovskite CaMnO$_3$ towards the formation of oxygen vacancies. Our motivation is provided by promising indications that novel material properties can be engineered by application of strain through coherent heteroepitaxy in thin films. While it is usually assumed that such epitaxial strain is accommodated primarily by changes in intrinsic lattice constants, point defect formation is also a likely strain relaxation mechanism. This is particularly true at the large strain magnitudes ($>$4%) whi…
Understanding the diffusion of oxygen vacancies in oxides under different external stimuli is crucial for the design of ion-based electronic devices, improve catalytic performance, etc. In this manuscript, using an external electric field produced by an AFM tip, we obtain the room-temperature diffusion coefficient of oxygen-vacancies in thin-films of SrTiO$_3$ under compressive/tensile epitaxial strain. Tensile strain produces a substantial increase of the diffusion coefficient, facilitating the mobility of vacancies through the film. Additionally, the effect of tip bias, pulse time, and tempe…
{\it Ab initio} calculations within density functional theory with generalized gradient approximation have been performed to study the effects of oxygen vacancies on the electronic structure and magnetism in undoped V$_2$O$_{5-x}$ ($0 < x < 0.5$). It is found that the introduction of oxygen vacancies would induce ferromagnetism in V$_2$O$_{5-x}$ with the magnetization being proportional to the O vacancy concentration $x$. The calculated electronic structure reveals that the valence electrons released by the introduction of oxygen vacancies would occupy mainly the neighboring V $d_{xy}$-dominan…
The iron(III) center in ferroelectric PbTiO3 together with an oxygen vacancy forms a charged defect associate, oriented along the crystallographic c-axis. Its microscopic structure has been analyzed in detail comparing results from a semi-empirical Newman superposition model analysis based on finestructure data and from calculations using density functional theory. Both methods give evidence for a substitution of Fe3+ for Ti4+ as an acceptor center. The position of the iron ion in the ferroelectric phase is found to be similar to the B-site in the paraelectric phase. Partial charge compensatio…
Spin-dependent relaxation and recombination processes in $γ$-irradiated $n$-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the SL1 center, the neutral excited triplet state of the oxygen-vacancy complex, are observed which can be separated by their different dynamics. One of the processes is the relaxation of the excited SL1 state to the ground state of the oxygen-vacancy complex, the other a charge transfer between $^{31}$P donors and SL1 centers forming close pairs, as indicated by elec…
We investigated SrFeO$_{3-x}$ thin films on a SrTiO$_3$ (001) substrate prepared via pulsed laser epitaxy using an optical spectroscopy technique. The oxygen vacancy level ($x$) was controlled by post-annealing processes at different oxygen partial pressures. We achieved a brownmillerite(BM) structure at $x =$ 0.5 and observed the evolution of the crystal structure from BM into perovskite(PV) as the oxygen concentration increased. We observed the evolution of infrared-active phonons with respect to the oxygen concentration, which was closely related to the structural evolution observed via X-r…
It is generally accepted that oxygen vacancies play a central role in the emergence of ferroelectricity for HfO2-based materials, but the underlying mechanism still remains elusive. Herein, starting from the basic characterization circuit, we propose that the observed ferroelectricity is extrinsic. A key finding is that charged oxygen vacancies oscillate within the sample under repeated electric pulses, yielding a nonlinear current which behaves similarly to the polarization current for a normal ferroelectric. This unwanted current signal results in a ferroelectric-like hysteresis loop with bo…
Migration of oxygen vacancies has been proposed to play an important role in the bipolar memristive behaviors since oxygen vacancies can directly determine the local conductivity in many systems. However, a recent theoretical work demonstrated that both migration of oxygen vacancies and coexistence of cation and anion vacancies are crucial to the occurrence of bipolar memristive switching, normally observed in the small-sized NiO. So far, experimental work addressing this issue is still lacking. In this work, with conductive atomic force microscope and combined scanning transmission electron m…
We evaluate the interplay between epitaxial strain and oxygen vacancy formation in the perovskite-structure oxide lanthanum aluminate, LaAlO$_3$. Using density functional theory within the GGA$+U$ approximation we calculate the dependence of the oxygen vacancy formation energy on the biaxial strain conditions. We find that the change in formation energy with strain is negligible over the range of strain values usually accessible through coherent epitaxial growth. Our findings suggest that experimental reports of different oxygen vacancy concentrations in strained films result from extrinsic fa…
The lattice relaxation in oxygen-deficient Ta2O5 is investigated using first-principles calculations. The presence of a charge-neutral oxygen vacancy can result in a long-ranged lattice relaxation which extends beyond 18 Å from the vacancy site. The lattice relaxation has significant effects on the vacancy formation energy as well as the electronic structures. The long-ranged behavior of the lattice relaxation is explained in terms of the Hellmann-Feynman forces and the potential energy surface related to the variation of Ta-O bond lengths.
We have investigated the interaction of oxygen vacancies and 180-degree domain walls in tetragonal PbTiO3 using density-functional theory. Our calculations indicate that the vacancies do have a lower formation energy in the domain wall than in the bulk, thereby confirming the tendency of these defects to migrate to, and pin, the domain walls. The pinning energies are reported for each of the three possible orientations of the original Ti-O-Ti bonds, and attempts to model the results with simple continuum models are discussed.
The study of zinc oxide, within the homogeneous electron gas approximation, results in overhybridization of zinc $3d$ shell with oxygen $2p$ shell, a problem shown for most transition metal chalcogenides. This problem can be partially overcome by using LDA+$U$ (or, GGA+$U$) methodology. However, in contrast to the zinc $3d$ orbital, Hubbard type correction is typically excluded for the oxygen $2p$ orbital. In this work, we provide results of electronic structure calculations of an oxygen vacancy in ZnO supercell from ab initio perspective, with two Hubbard type corrections, $U_{\mathrm{Zn}-3d}…
The series of Mnx(Y0.148Zr0.852)1-xO2-δ ceramics was systematically studied by means of X-ray absorption and emission spectroscopy and DC magnetic susceptibility. XAS and XES results show changes in manganese oxidation state and a gradual evolution of the local atomic environment around Mn ions upon increasing dopants content, which is due to structural relaxation caused by growing amount of oxygen vacancies. Magnetic susceptibility measurements reveal that Mn3O4 precipitates are formed for x greater than or equal to 0.1 and enable independent determination of actual quantity of Mn ions dissol…
Oxygen vacancies in two-dimensional metal-oxide structures garner much attention due to unique conductive, magnetic and even superconductive functionalities they induce. Ferroelectric domain walls have been a prominent recent example because they serve as a hub for topological defects that enable unusual symmetries and are relevant for low-energy switching technologies. However, owing to the light weight of oxygen atoms and localized effects of their vacancies, the atomic-scale electrical and mechanical influence of oxygen vacancies has remained elusive. Here, stable individual oxygen vacancie…
The conductive characteristics of Bi0.9La0.1Fe0.96Mg0.04O3(BLFM) thin film are investigated at various temperatures and a negative differential resistance (NDR) is observed in the thin film, where a leakage current peak occurs upon application of a downward electric field above 80 oC. The origin of the NDR behavior is shown to be related to the ionic defect of oxygen vacancies (VO..) present in the film. On the basis of analyzing the leakage mechanism and surface potential behavior, the NDR behavior can be understood by considering the competition between the polarized distribution and neutral…
We provide insights into the influence of surface termination on the oxygen vacancy incorporation for the perovskite model material SrTiO3 during annealing in reducing gas environments. We present a novel approach to control to tailor the oxygen vacancy formation by controlling the termination. We prove that a SrO-termination can inhibit the incorporation of oxygen vacancies across the (100)-surface and apply this to control their incorporation during thin film growth. Utilizing the conducting interface between LaAlO3 and SrTiO3, we could tailor the oxygen-vacancy based conductivity contributi…
The development of Ruddlesden-Popper (RP) oxides as oxygen exchange and transport materials will benefit from mechanistic understanding of how oxygen transports through these materials. Using Density Functional Theory, we found there are two distinct oxygen interstitial diffusion mechanisms involving two different oxygen interstitial species that can be active in La2-xSrxNiO4+delta, and, we believe, in hyperstoichiometric RP oxides in general. The first mechanism is the previously proposed interstitialcy-mediated mechanism, which consists of diffusing oxide interstitials. The second mechanism …
We investigated the unoccupied part of the electronic structure of the oxygen-deficient hafnium oxide (HfO$_{\sim1.8}$) using soft x-ray absorption spectroscopy at O $K$ and Hf $N_3$ edges. Band-tail states beneath the unoccupied Hf 5$d$ band are observed in the O $K$-edge spectra; combined with ultraviolet photoemission spectrum, this indicates the non-negligible occupation of Hf 5$d$ state. However, Hf $N_3$-edge magnetic circular dichroism spectrum reveals the absence of a long-range ferromagnetic spin order in the oxide. Thus the small amount of $d$ electron gained by the vacancy formation…
We present molecular-dynamic simulations of memory resistors (memristors) including the crystal field effects on mobile ionic species such as oxygen vacancies appearing during operation of the device. Vacancy distributions show different patterns depending on the ratio of a spatial period of the crystal field to a characteristic radius of the vacancy-vacancy interaction. There are signatures of the orientational order and of spatial voids in the vacancy distributions for some crystal field potentials. The crystal field stabilizes the patterns after they are formed, resulting in a non-volatile …
We present X-ray photoelectron spectroscopy data which show that the chemisorbed oxygen previously observed to be on the surface of thin AlOx layers formed by room temperature thermal oxidation is bound by oxygen vacancies in the oxide. Increasing the electric field across the oxide, either by over-coating with a metallic electrode, or by electron bombardment, drives this surface chemisorbed oxygen into the vacancy sites. Due to the low bonding energies of these oxygen sites, subsequent oxygen exposures draw these ions back to the surface, reforming chemisorbed O$_2^-$. Al/AlOx/Al tunnel junct…
A space-charge model is applied to describe the equilibrium effects of segregation of double-donor oxygen vacancies to grain boundaries in dry and wet acceptor-doped samples of the perovskite oxide BaZrO3. The grain boundary core vacancy concentrations and electrostatic potential barriers resulting from different vacancy segregation energies are evaluated. Density-functional calculations on vacancy segregation to the mirror-symmetric Σ3 (112) [-110] tilt grain boundary are also presented. Our results indicate that oxygen vacancy segregation can be responsible for the low grain boundary proton …
The defect induced chemical expansion in acceptor-doped barium zirconate is investigated using density-functional theory (DFT) calculations. The two defect species involved in the hydration reaction, the +2 charged oxygen vacancy and the proton interstitial forming a hydroxide ion, are considered both as free defects and in association with the dopants Y, In, Sc and Ga. The defect induced strain tensor lambda is introduced, which provides a natural generalisation of the ordinary chemical expansion to three dimensions and to anisotropic distortions. Both the addition of a vacancy and a proton c…
Single-phase perovskite 5 at.% Mn-doped and undoped polycrystalline BaTiO3 thin films have been grown under different oxygen partial pressures by pulsed laser deposition on platinum-coated sapphire substrates. Ferroelectricity is only observed for the Mn-doped and undoped BaTiO3 thin films grown under relatively high oxygen partial pressure. Compared to undoped BaTiO3, Mn-doped BaTiO3 reveals a low leakage current, increased dielectric loss, and a decreased dielectric constant. Ferromagnetism is seen on Mn-doped BaTiO3 thin films prepared under low oxygen partial pressure and is attributed to …
Conventional Oxide dispersion strengthened steels are characterized by thermally stable, high density of Y-Ti-O nanoclusters, which are responsible for their high creep strength. Ti plays a major role in obtaining a high density of ultrafine particles of optimum size range of 2-10 nm. In Al-containing ODS steels developed for corrosion resistance, Y-Al-O clusters formed are of size range 20 -100 nm, and Ti fails in making dispersions finer in the presence of Al. Usage of similar alloying elements like Zr in place of Ti is widely considered. In this study, binding energies of different stages o…
Transition-metal perovskite oxides constitute a series of functional material systems for electronics, catalysis and energy-conversion processes, in which oxygen migration and evolution play a key role. However, the stable metal-oxygen (M-O) bond forms large energy barrier inhibiting ion diffusion. Therefore, seeking efficient and facile approaches to accelerate oxygen kinetics has become a significant issue. Here, the interaction (interfacial charge transfer and cooperative bonding) between noble metal (Pt, Ag) and perovskites oxide (SrCoO3-delta) is employed to weaken (M-O) bond and decrease…
Room temperature ferromagnetism is observed in undoped TiO2 films deposited on Si substrates using pulsed laser deposition (PLD). The ferromagnetic properties of the samples depend on the oxygen partial pressure during the PLD synthesis. The appearance of higher binding energy component (HBEC) in the oxygen 1s core peak from x-ray photoelectron spectroscopy (XPS) suggests the presence of oxygen vacancies in these samples. The amount of oxygen during the synthesis determines the vacancy concentration in the samples which is directly related to the magnetic behavior of the samples. The magnetic …
ITO thin films were deposited on glass substrates by d.c. magnetron sputtering with varied oxygen flow rates. It was found that the optical absorption decreases and optical absorption edge has blue shifts with the increasing oxygen flow rate. Oxygen vacancy concentration was characterized and analyzed by XPS. It is shown that the oxygen vacancy concentration increases with oxygen flow rates, which is a different observation from the current understanding. The energy band structures associated with different vacancy concentrations of ITO were calculated using the first-principle based on densit…
We use first-principles methods to investigate the effects of collective lattice excitations on the formation of oxygen vacancies in perovskite thin films. We find that phonons play a crucial role on the strain-mediated control of defect chemistry at finite temperatures. In particular, zero-temperature oxygen vacancy formation trends deduced as a function of epitaxial strain can be fully reversed near room temperature. Our first-principles calculations evidence a direct link between the lattice contribution to the oxygen vacancy free energy and the volume expansion that the system undergoes wh…
Rare-earth doped form, ceria (CeO2) is of interest as a potential candidate for solid oxide fuel cells (SOFCs) because of its relatively high oxygen ion conductivity at temperatures below 600 °C. At the present time, computational chemistry has reached a certain maturity which allows prediction of materials properties that are difficult to observe experimentally. However, understanding of the roles of dopants on the oxygen ion conduction in CeO2 is still incomplete for quantitatively reliable analysis due to strong electron correlation of 4f electrons. In this study, density functional theory …
Multiferroics in which giant ferroelectric polarization and magnetism coexist are of tremendous potential for engineering disruptive applications in information storage and energy conversion. Yet the functional properties of multiferroics are thought to be affected detrimentally by the presence of point defects, which may be abundant due to the volatile nature of some constituent atoms and high temperatures involved in materials preparation. Here, we demonstrate with theoretical methods that oxygen vacancies may enhance the functionality of multiferroics by radically changing their magnetic in…
Pitting corrosion is a much-studied and technologically relevant subject. However, the fundamental mechanisms responsible for the breakdown of the passivating oxide layer are still subjects of debate. Chloride anions are known to accelerate corrosion; relevant hypotheses include Cl insertion into positively charged oxygen vacancies in the oxide film, and Cl adsorption on passivating oxide surfaces, substituting for surface hydroxyl groups. In this work, we conduct large-scale first principles modeling of explicit metal/Al(2)O(3) interfaces to investigate the energetics and electronic structure…
It is generally assumed that oxygen potential in a thin oxide electrolyte follows a linear distribution between electrodes. Jacobsen and Mogensen have shown, however, that this is not the case for thin zirconia membranes in solid oxide electrochemical cells. Here we demonstrate that there is a ubiquitous oxygen potential transition rooted in the p-type/n-type transition of electronic conductivity inside mixed conducting oxides, and that the transition is extremely sensitive to electrode potential and current density. It is also remarkably sensitive to the conductivity ratio of electrons and ho…
Disorder, primarily in the form of oxygen vacancies, cation stoichiometry and atomic inter-diffusion, appear to play vital roles in the electronic and transport properties of the metallic electron liquid at the oxide hetero-interfaces. Antisite disorder is also understood to be a key player in this context. In order to delineate the roles of two of these key factors, oxygen vacancy and antisite disorder, we have investigated the effect of oxygen vacancy on the antisite disorder at a number of interfaces separating two La-based transition metal oxides using density functional theory. Oxygen vac…
