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arXiv 1506.00596cond-mat.mtrl-sci
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金红石型TiO $_2$(110)表面中性和带电氧空位的第一性原理嵌入团簇计算

First-principles embedded-cluster calculations of the neutral and charged oxygen vacancy at the rutile TiO$_2$(110) surface

Daniel Berger, Harald Oberhofer, Karsten Reuter

摘要:

利用全势屏蔽杂化密度泛函理论(DFT)计算了金红石型TiO $_2$(110)表面氧空位的中性态和带电态的热力学稳定性.采用固体(QM/MM)嵌入团簇计算来解释TiO $_2$对带电缺陷态的强极化响应。与体O空位的情况类似,发现+2电荷态$V_{\rm O}^{2+}$在能量上是迄今为止最稳定的。只有当费米能级位置非常接近导带时,小的极化子才可能被带电荷的空位俘获。$V_{\rm O}^{2+}$形成能随费米能级位置的降低而大幅降低,表明$p$掺杂样品的表面O空位浓度强烈增强。

英文摘要:

We perform full-potential screened-hybrid density-functional theory (DFT) calculations to compare the thermodynamic stability of neutral and charged states of the surface oxygen vacancy at the rutile TiO$_2$(110) surface. Solid-state (QM/MM) embedded-cluster calculations are employed to account for the strong TiO$_2$ polarization response to the charged defect states. Similar to the situation for the bulk O vacancy, the +2 charge state $V_{\rm O}^{2+}$ is found to be energetically by far most stable. Only for Fermi-level positions very close to the conduction band, small polarons may at best be trapped by the charged vacancy. The large decrease of the $V_{\rm O}^{2+}$ formation energy with decreasing Fermi-level position indicates strongly enhanced surface O vacancy concentrations for $p$-doped samples.

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