We report Coulomb blockade transport studies of semiconducting InAs nanowires grown with epitaxial superconducting Al and ferromagnetic insulator EuS on overlapping facets. Comparing experiment to a theoretical model, we associate cotunneling features in even-odd bias spectra with spin-polarized Andreev levels. Results are consistent with zero-field spin splitting exceeding the induced superconducting gap. Energies of subgap states are tunable on either side of zero via electrostatic gates.
We present measurements of one-dimensional superconductor-semiconductor Coulomb islands, fabricated by gate confinement of a two-dimensional InAs heterostructure with an epitaxial Al layer. When tuned via electrostatic side gates to regimes without sub-gap states, Coulomb blockade reveals Cooper-pair mediated transport. When sub-gap states are present, Coulomb peak positions and heights oscillate in a correlated way with magnetic field and gate voltage, as predicted theoretically, with (anti) crossings in (parallel) transverse magnetic field indicating Rashba-type spin-orbit coupling. Overall …
We theoretically study superconducting islands based on semiconductor-nanowire Josephson junctions and take into account the presence of subgap quasiparticle excitations in the spectrum of the junction. Our method extends the standard model Hamiltonian for a superconducting charge qubit and replaces the Josephson potential by the Bogoliubov--de Gennes Hamiltonian of the nanowire junction, projected onto the relevant low-energy subgap subspace. This allows to fully incorporate the coherent dynamics of subgap levels in the junction. The combined effect of spin-orbit coupling and Zeeman energy in…
Inducing an inversion layer in organic semiconductors is a highly nontrivial, but critical, achievement for producing organic field-effect transistor (OFET) devices, which rely on the generation of inversion, accumulation, and depletion regimes for successful operation. In recent years, a major milestone was reached: an OFET was made to successfully operate in the inversion-mode for the first time. Here, we develop a pulsed bias technique to characterize the dopant type of any organic material system, without prior knowledge or characterization of the material in question. We use this techniqu…
We report on a systematic study of the Coulomb blockade effects in nanofabricated narrow constrictions in thin (Ga,Mn)As films. Different low-temperature transport regimes have been observed for decreasing constriction sizes: the ohmic, the single electron tunnelling (SET) and a completely insulating regime. In the SET, complex stability diagrams with nested Coulomb diamonds and anomalous conductance suppression in the vicinity of charge degeneracy points have been observed. We rationalize these observations in the SET with a double ferromagnetic island model coupled to ferromagnetic leads. It…
Carbon (C) doped hexagonal boron nitride (hBN) has been experimentally reported to be ferromagnetic at room temperature. Substitution by C in hBN has been also reported to form islands of graphene. In this work we derive a mechanistic understanding of ferromagnetism with graphene islands in hBN from first principles and mean-field Hubbard model. We find a general property, that in bipartite lattices where the sublattices differ in on-site energies, as in hBN, the ordering between local magnetic moments can be substantial and predominantly anti-ferromagnetic (AFM) if they are embedded in the sa…
Spin transfer torque in magnetic structures occurs when the transverse component of the spin current that flows from the nonmagnetic medium to ferromagnetic medium are absorbed by the interface. In this paper, considering the Rashba effect on semiconductor region, we have discussed the spin transfer torque in semiconductor/ferromagnetic structure and obtained the components of spin-current density for two models: (I)-single electron and (II)- the distribution of electrons. We have shown that whatever the difference between Fermi surfaces in semiconductor and Fermi spheres for the up and down s…
Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here we propose a corresponding device in spintronics: the spin-current diode, in which the forward spin current is large but the reversed one is negligible. We show that the lead/ferromagnetic quantum dot/lead system and the lead/ferromagnetic semiconductor/lead junction can work as spin-current diodes. The spin-current diode, a low dissipation device, may have important applications in spintronics, as the conventional charge-current di…
Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors
本文描述了铁磁半导体（Ga，Mn）As合金中由于p-d动力学交换耦合与巡游自旋子系统的Mn局域磁矩磁化弛豫的理论。理论上的吉尔伯特阻尼系数暗示了这种机制作为一个函数的Mn矩密度，空穴浓度，和准粒子寿命计算。与实验铁磁共振数据的比较表明，在退火强金属样品，p-d耦合有助于显着的阻尼率的磁化进动在低温下。通过结合理论吉尔伯特系数的值的磁各向异性能量，我们估计，在全半导体三层器件的自旋转移磁化翻转的典型的临界电流可以低至$\sim 10^{5} {\rm A cm}^{-2}$。
Interlayer coupling in ferromagnetic semiconductor superlattices
本文发展了稀磁半导体载流子感生铁磁性的平均场论。我们的方法代表了一个标准的RKKY模型的改进，允许系统的空间不均匀性，自由载流子自旋极化，有限的温度，自由载流子交换和相关性要考虑自洽。作为一个例子，我们计算了Mn $_x$ Ga $_{1-x}$ As/GaAs超晶格的电子结构，证明了半导体磁电阻系统具有设计特性的可能性。
A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is precession of the non-equilibrium spin population of the semiconductor in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become less effective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been demonstrated in GaAs at room temperature. We show here that by forcing the magnetization in the ferromagnet (the spin injector and detector) to precess at the ferromagnetic resonance frequency, an el…
Conventional spin-singlet superconductivity that deeply penetrates into ferromagnets is typically killed by the exchange interaction, which destroys the spin-singlet pairs. Under certain circumstances, however, superconductivity survives this interaction by adopting the pairing behavior of spin triplets. The necessary conditions for the emergence of triplet pairs are well-understood, owing to significant developments in theoretical frameworks and experiments. The long-term challenges to inducing superconductivity in magnetic semiconductors, however, involve difficulties in observing the finite…
Following significant progress in the visualization and characterization of Majorana end modes in hybrid systems of semiconducting nanowires and superconducting islands, much attention is devoted to the investigation of the electronic structure at the buried interface between the semiconductor and the superconductor. The properties of that interface and the structure of the electronic wavefunctions that occupy it determine the functionality and the topological nature of the superconducting state induced therein. Here we study this buried interface by performing spectroscopic mappings of superc…
We propose an accurate clocked single-spin source for ac-spintronic applications. Our device consists of a superconducting island covered by a ferromagnetic insulator layer through which it is coupled to superconducting leads. Single-particle transfer relies on the energy gaps and the island's charging energy, and is enabled by a bias and a time-periodic gate voltage. Accurate spin transfer is achieved by the ferromagnetic insulator layer which polarizes the island, provides spin-selective tunneling barriers and improves the precision by suppressing Andreev reflection. We analyze realistic mat…
