arXiv 1012.42522010-12-20cond-mat.mes-hall

Fully electrically read-write device out of a ferromagnetic semiconductor

S. Mark, P. Dürrenfeld, K. Pappert, L. Ebel, K. Brunner, C. Gould, L. W. Molenkamp

备注：: 4 pages, 4 figures
DOI：: 10.1103/PhysRevLett.106.057204

英文摘要：

We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out of the state is done by the means of the tunneling anisotropic magneto resistance (TAMR) effect. This one bit demonstrator device can be used to design a electrically programmable memory and logic device.

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