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arXiv 2202.05970cond-mat.mes-hallcond-mat.supr-con
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混合半导体-超导体岛中准粒子中毒的静电调控

Electrostatic control of quasiparticle poisoning in a hybrid semiconductor-superconductor island

H. Q. Nguyen, D. Sabonis, D. Razmadze, E. T. Mannila, V. F. Maisi, D. M. T. van Zanten, E. C. T. O'Farrell, P. Krogstrup, F. Kuemmeth, J. P. Pekola, C. M. Marcus

AI总结:

该研究针对超导器件中准粒子中毒导致性能下降的问题,在InAs/Al混合纳米线库仑岛上实现准粒子中毒的静电调控,发现栅极可使固定势垒的峰上隧穿速率变两个数量级,还探究了温度与磁场的影响。

摘要:

超导器件的性能常因准粒子不受控的产生与消失而下降,这一过程被称为准粒子中毒。我们在InAs/Al混合纳米线的库仑岛上,以固定势垒上单电荷隧穿的形式,实现了对准粒子中毒的静电调控。研究采用高带宽电荷传感技术,在隧穿速率最大的库仑阻塞峰区与无隧穿的库仑谷区监测岛上的电荷占据情况。对于法向态电阻固定的势垒,静电栅极可将峰上隧穿速率改变两个数量级,我们将其归因于岛上感应超导能隙的大小和软度的栅极依赖性,这一结论得到了独立态密度测量的佐证。此外,本文还研究了隧穿速率的温度与磁场依赖性。

英文摘要:

The performance of superconducting devices is often degraded by the uncontrolled appearance and disappearance of quasiparticles, a process known as poisoning. We demonstrate electrostatic control of quasiparticle poisoning in the form of single-charge tunneling across a fixed barrier onto a Coulomb island in an InAs/Al hybrid nanowire. High-bandwidth charge sensing was used to monitor charge occupancy of the island across Coulomb blockade peaks, where tunneling rates were maximal, and Coulomb valleys, where tunneling was absent. Electrostatic gates changed on-peak tunneling rates by two orders of magnitude for a barrier with fixed normal-state resistance, which we attribute to gate dependence of the size and softness of the induced superconducting gap on the island, corroborated by separate density-of-states measurements. Temperature and magnetic field dependence of tunneling rates are also investigated.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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