We report the discovery of an effect where two ferromagnetic materials, one semiconductor ((Ga,Mn)As) and one metal (permalloy), can be directly deposited on each other and still switch their magnetization independently. We use this independent magnetization behavior to create various resistance states dependent on the magnetization direction of the individual layers. At zero magnetic field a two layer device can reach up to four non-volatile resistance states.
Many-particle electron states in semiconductor quantum dots with carrier-mediated ferromagnetism are studied theoretically within the self-consistent Boltzmann equation formalism. Depending on the conditions, a quantum dot may contain there phases: partially spin-polarized ferromagnetic, fully spin-polarized ferromagnetic, and paramagnetic phases. The physical properties of many-body ferromagnetic confined systems come from the competing carrier-mediated ferromagnetic and Coulomb interactions. The magnetic phases in gated quantum dots with holes can be controlled by the voltage or via optical …
We present a theory of the anomalous Hall effect in ferromagnetic (Mn,III)V semiconductors. Our theory relates the anomalous Hall conductance of a homogeneous ferromagnet to the Berry phase acquired by a quasiparticle wavefunction upon traversing closed paths on the spin-split Fermi surface of a ferromagnetic state. It can be applied equally well to any itinerant electron ferromagnet. The quantitative agreement between our theory and experimental data in both (In,Mn)As and (Ga,Mn)As systems suggests that this disorder independent contribution to the anomalous Hall conductivity dominates in dil…
Circularly polarized laser pulses that excite electron-hole pairs across the band gap of (III,Mn)V ferromagnetic semiconductors can be used to manipulate and to study collective magnetization dynamics. The initial spin orientation of a photocarrier in a (III,V) semiconductors is determined by the polarization state of the laser. We show that the photocarrier spin can be irreversibly transferred to the collective magnetization, whose dynamics can consequently be flexibly controlled by suitably chosen laser pulses. As illustrations we demonstrate the feasibility of all optical ferromagnetic reso…
A theoretical model of the coherent precession of magnetization excited by a picosecond acoustic pulse in a ferromagnetic semiconductor layer of (Ga,Mn)As is developed. The short strain pulse injected into the ferromagnetic layer modifies the magnetocrystalline anisotropy resulting in a tilt of the equilibrium orientation of magnetization and subsequent magnetization precession. We derive a quantitative model of this effect using the Landau-Lifshitz equation for the magnetization that is precessing in the time-dependent effective magnetic field. After developing the general formalism, we then …
The spin dynamics of photoexcited carriers in semiconductors in contact with a ferromagnet is treated theoretically and compared with time-dependent Faraday rotation experiments. The long time response of the system is found to be governed by the first tens of picoseconds in which the excited plasma interacts strongly with the intrinsic interface between semiconductor and ferromagnet in spite of the existence of a Schottky barrier in equilibrium.
We consider interaction effects related to a nonuniform magnetization in ferromagnetic nanowires and their possible generalization to nanorings. First we show that the electric current in a ferromagnetic nanowire with more than one domain wall induces an exchange coupling between the walls mediated by the spin-dependent interference of scattered carriers. This interaction reveals a complex behavior as a function of mutual orientations and separation of the domain walls, thus affecting the domain wall dynamics. Then we consider how the theory should be modified in the case of a magnetized quant…
As an alternative to conventional magnetic field, the effective spin-orbit field in transition metals, derived from the Rashba field experienced by itinerant electrons confined in a spatial inversion asymmetric plane through the s-d exchange interaction, is proposed for the manipulation of magnetization. Magnetization switching in ferromagnetic thin films with perpendicular magnetocrystalline anisotropy can be achieved by current induced spin-orbit field, with small in-plane applied magnetic field. Spin-orbit field induced by current pulses as short as 10 ps can initiate ultrafast magnetizatio…
A new quantum approach is presented that can account for the description of small ferromagnetic particles magnetization tunneling. An estimate of the saturation value of an external applied magnetic field along the easy axis is obtained. An analytic expression for the tunneling factor in the absence of an external magnetic field is deduced from the present approach that also allows to obtain the crossover temperature characterizing the regime where tunneling is dominated by the quantum effects.
We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out of the state is done by the means of the tunneling anisotropic magneto resistance (TAMR) effect. This one bit demonstrator device can be used to design a electrically programmable memory and logic device.
Possibility of a ferromagnetic semiconductor single wall carbon nanotube (SWCNT), where ferromagnetism is due to coupling between doped magnetic impurity on a zigzag SWCNT and electrons spin, is investigate. We found, in the weak impurity-spin couplings, at low impurity concentrations the spin up electrons density of states remain semiconductor while the spin down electrons density of states shows a metallic behavior. By increasing impurity concentrations the semiconducting gap of spin up electrons in the density of states is closed, hence a semiconductor to metallic phase transition is take p…
We develop an analytical model for describing the magnetization dynamics in ferromagnetic metal nanoparticles, which is based on the coupled system of the Landau-Lifshitz-Gilbert (LLG) and Maxwell equations. By solving Maxwell's equations in the quasi-static approximation and finding the magnetic field of eddy currents, we derive the closed LLG equation for the magnetization that fully accounts for the effects of conductivity. We analyze the difference between the LLG equations in metallic and dielectric nanoparticles and show that these effects can strongly influence the magnetization dynamic…
Spin transfer torque in magnetic structures occurs when the transverse component of the spin current that flows from the nonmagnetic medium to ferromagnetic medium are absorbed by the interface. In this paper, considering the Rashba effect on semiconductor region, we have discussed the spin transfer torque in semiconductor/ferromagnetic structure and obtained the components of spin-current density for two models: (I)-single electron and (II)- the distribution of electrons. We have shown that whatever the difference between Fermi surfaces in semiconductor and Fermi spheres for the up and down s…
Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here we propose a corresponding device in spintronics: the spin-current diode, in which the forward spin current is large but the reversed one is negligible. We show that the lead/ferromagnetic quantum dot/lead system and the lead/ferromagnetic semiconductor/lead junction can work as spin-current diodes. The spin-current diode, a low dissipation device, may have important applications in spintronics, as the conventional charge-current di…
We realize resonant driving of the magnetization precession by monochromatic phonons in a thin ferromagnetic layer embedded into a phononic Fabry-Perot resonator. A femtosecond laser pulse excites resonant phonon modes of the structure in the 10-40 GHz frequency range. By applying an external magnetic field, we tune the precession frequency relative to the frequency of the phonons localized in the cavity and observe the enormous increase in the amplitude of the magnetization precession when the frequencies of free magnetization precession and phonons localized in the cavity are equal.
We present a study of photo-excited magnetization dynamics in ferromagnetic (Ga,Mn)As films observed by time-resolved magneto-optical measurements. The magnetization precession triggered by linearly polarized optical pulses in the absence of an external field shows a strong dependence on photon frequency when the photo-excitation energy approaches the band-edge of (Ga,Mn)As. This can be understood in terms of magnetic anisotropy modulation by both laser heating of the sample and by hole-induced non-thermal paths. Our findings provide a means for identifying the transition of laser-triggered ma…
We study the switching-process of the magnetization in a ferromagnetic-normal-metal multilayer system by a spin polarized electrical current via the spin transfer torque. We use a spin drift-diffusion equation (SDDE) and the Landau-Lifshitz-Gilbert equation (LLGE) to capture the coupled dynamics of the spin density and the magnetization dynamic of the heterostructure. Deriving a fully analytic solution of the stationary SDDE we obtain an accurate, robust, and fast self-consistent model for the spin-distribution and spin transfer torque inside general ferromagnetic/normal metal heterostructures…
The magnetization reversal process in thin-film ferromagnetic elements with surface anisotropy of various shapes and sizes is investigated by means of numerical simulation. The dependence of the perpendicular and in-plane hysteresis loops on the element thickness and the value of the surface anisotropy constant is obtained. For sufficiently large values of the surface anisotropy constant the magnetization reversal of thin-film elements is shown to occur due to the nucleation of the buckling mode. For an elongated rectangular element the nucleation field of the buckling mode is proportional to …
The ballistic spin-filter effect from a ferromagnetic metal into a semiconductor has theoretically been studied with an intention of detecting the spin polarizability of density of states in FM layer at a higher energy level. The physical model for the ballistic spin filtering across the interface between ferromagnetic metals and semiconductor superlattice is developed by exciting the spin polarized electrons into n-type AlAs/GaAs superlattice layer at a much higher energy level and then ballistically tunneling through the barrier into the ferromagnetic film. Since both the helicity-modulated …
We describe a theory of Mn local-moment magnetization relaxation due to p-d kinetic-exchange coupling with the itinerant-spin subsystem in the ferromagnetic semiconductor (Ga,Mn)As alloy. The theoretical Gilbert damping coefficient implied by this mechanism is calculated as a function of Mn moment density, hole concentration, and quasiparticle lifetime. Comparison with experimental ferromagnetic resonance data suggests that in annealed strongly metallic samples, p-d coupling contributes significantly to the damping rate of the magnetization precession at low temperatures. By combining the theo…
We present a theory of the imprinting of the electron spin coherence and population in an n-doped semiconductor which forms a junction with a ferromagnet. The reflection of non-equilibrium semiconductor electrons at the interface provides a mechanism to manipulate the spin polarization vector. In the case of unpolarized excitation, this ballistic effect produces spontaneous electron spin coherence and nuclear polarization in the semiconductor, as recently observed by time-resolved Faraday rotation experiments. We investigate the dependence of the spin reflection on the Schottky barrier height …
We show that the magnetization of a thin ferromagnetic (Ga,Mn)As layer can be modulated by picosecond acoustic pulses. In this approach a picosecond strain pulse injected into the structure induces a tilt of the magnetization vector M, followed by the precession of M around its equilibrium orientation. This effect can be understood in terms of changes in magneto-crystalline anisotropy induced by the pulse. A model where only one anisotropy constant is affected by the strain pulse provides a good description of the observed time-dependent response.
We present a dynamical model that successfully explains the observed time evolution of the magnetization in diluted magnetic semiconductor quantum wells after weak laser excitation. Based on the pseudo-fermion formalism and a second order many-particle expansion of the exact p-d exchange interaction, our approach goes beyond the usual mean-field approximation. It includes both the sub-picosecond demagnetization dynamics and the slower relaxation processes which restore the initial ferromagnetic order in a nanosecond time scale. In agreement with experimental results, our numerical simulations …
Two complementary effects modify the GHz magnetization dynamics of nanoscale heterostructures of ferromagnetic and normal materials relative to those of the isolated magnetic constituents: On the one hand, a time-dependent ferromagnetic magnetization pumps a spin angular-momentum flow into adjacent materials and, on the other hand, spin angular momentum is transferred between ferromagnets by an applied bias, causing mutual torques on the magnetizations. These phenomena are manifestly nonlocal: they are governed by the entire spin-coherent region that is limited in size by spin-flip relaxation …
We consider a small metallic particle (quantum dot) where ferromagnetism arises as a consequence of Stoner instability. When the particle is connected to electrodes, exchange of electrons between the particle and the electrodes leads to a temperature- and bias-driven Brownian motion of the direction of the particle magnetization. Under certain conditions this Brownian motion is described by the stochastic Landau-Lifshitz-Gilbert equation. As an example of its application, we calculate the frequency-dependent magnetic susceptibility of the particle in a constant external magnetic field, which i…
A quantum theory of the spin-dependent scattering of semiconductor electrons by a Schottky barrier at an interface with a ferromagnet is presented. The reflection of unpolarized non-equilibrium carriers produces spontaneous spin-polarization in the semiconductor. If a net spin-polarization pre-exists in the semiconductor, the combination of the ferromagnet magnetization and the incident carrier polarization combine to tilt the reflected polarization in the semiconductor. The spin reflection properties are investigated as functions of the system characteristics: the Schottky barrier height, sem…
Scheme and principle of operation of a spin gain transistor are proposed: a large unmagnetized current creates density sufficient for the ferromagnetic transition; a small magnetized current initiates spontaneous magnetization; large magnetized current is extracted. Therefore spin gain of more than 1000 is predicted. Collective dynamics of spins under Coulomb exchange interaction is described via Semiconductor Bloch Equations.
The magnetization characteristic in a permalloy thin strip is investigated by electrically measuring the anisotropic magnetoresistance and ferromagnetic resonance in in-plane and out-of-plane configurations. Our results indicate that the magnetization vector can rotate in the film plane as well as out of the film plane by changing the intensity of external magnetic field of certain direction. The magnetization characteristic can be explained by considering demagnetization and magnetic anisotropy. Our method can be used to obtain the demagnetization factor, saturated magnetic moment and the mag…
We predict bistability in the Curie temperature-voltage characteristic of double barrier resonant-tunneling structures with dilute ferromagnetic semiconductor quantum wells. Our conclusions are based on simulations of electrostatics and ballistic quantum transport combined with a mean-field theory description of ferromagnetism in dilute magnetic semiconductors.
We investigate the current-excited magnetization dynamics in a narrow ferromagnetic Permalloy wire by means of Lorentz microscopy, together with the results of simultaneous transport measurements. A detailed structural evolution of the magnetization is presented as a function of the applied current density. Local structural deformation, bidirectional displacement, and magnetization reversal are found below the Curie temperature with increasing the current density. We discuss probable mechanisms of observed features of the current-excited magnetization dynamics.
A theoretical proposal for testing Bell's inequality in mesoscopic systems is presented. We show that the entanglement of two electron spins can be detected in the spin filter effect in the mesoscopic semiconductor / ferromagnetic semiconductor / semiconductor junction. The current-current correlation function is calculated by use of the quantum scattering theory and we compare it with the local hidden variable theory. We also discuss the influence of an imperfect spin filter and derive the condition to see the violation of Bell's inequality experimentally.
We discuss the effects of thermal noise on the magnetic response of a lateral ferromagnetic Josephson junction with spin-orbit coupling and out-of-plane magnetization. The direction of the magnetic moment in the ferromagnetic layer can be inverted by using controlled current pulses. This phenomenon is due to the magnetoelectric effect that couples the flowing charge current and the magnetization of the ferromagnet. We investigate the magnetization reversal effect versus intrinsic parameters of the ferromagnet, such as the Gilbert damping and strength of the spin-orbit coupling. We estimate the…
We develop a mean-field theory of carrier-induced ferromagnetism in diluted magnetic semiconductors. Our approach represents an improvement over standard RKKY model allowing spatial inhomogeneity of the system, free-carrier spin polarization, finite temperature, and free-carrier exchange and correlation to be accounted for self-consistently. As an example, we calculate the electronic structure of a Mn$_x$Ga$_{1-x}$As/GaAs superlattice with alternating ferromagnetic and paramagnetic layers and demonstrate the possibility of semiconductor magnetoresistance systems with designed properties.
The Josephson current in a diffusive superconductor/ferromagnet/superconductor junction with precessing magnetization is calculated within the quasiclassical theory of superconductivity. When the junction is phase-biased, a stationary current (without a.c. component) can flow through it despite the non-equilibrium condition. A large critical current is predicted due to a dynamically induced long range triplet proximity effect. Such effect could be observed in a conventional hybrid device close to the ferromagnetic resonance.
We study tunneling conductance in ferromagnetic semiconductor/insulator/s-wave superconductor junction where Rashba spin-orbit interaction (RSOI) and exchange field are taken into account in the ferromagnetic semiconductor. We show that normalized conductance at zero voltage has a maximum as a function of RSOI for high transparent interface and finite exchange field. This is because Andreev reflection probability shows a nonmonotonic dependence on RSOI in the presence of the exchange field. On the other hand, for intermediate transparent interface, normalized conductance at zero voltage has a …
We apply an analysis of time-dependent spin-polarized current in a semiconductor channel at room temperature to establish how the magnetization configuration and dynamics of three ferromagnetic terminals, two of them biased and third connected to a capacitor, affect the currents and voltages. In a steady state, the voltage on the capacitor is related to spin accumulation in the channel. When the magnetization of one of the terminals is rotated, a transient current is triggered. This effect can be used for electrical detection of magnetization reversal dynamics of an electrode or for dynamical …
In this article a detailed characterization of a magnetization motion in a single sub-micrometer and multi-terminal ferromagnetic structure in lateral geometry is performed in a GHz regime using direct DC characterization technique. We have shown applicability of the Stoner-Wohlfarth model to the magnetic nano-structure with large length to with ratio. Applying the model to experimental data we are able to extract relevant magnetization motion parameters and show a correlation between high frequency inductive currents and local magnetization. Additionally, DC voltage generated over the structu…
The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films, and observed an exceptionally large ANE at zero magnetic field. We further show that AHE and ANE share a common origin and demonstrate the validity of the Mott relation for the anomalous transport phenomena.
In ferromagnetic trilayers, a spin-orbit-induced spin current can have a spin polarization of which direction is deviated from that for the spin Hall effect. Recently, magnetization switching in ferromagnetic trilayers has been proposed and confirmed by the experiments. In this work, we theoretically and numerically investigate the switching current required for perpendicular magnetization switching in ferromagnetic trilayers. We confirm that the tilted spin polarization enables field-free deterministic switching at a lower current than conventional spin-orbit torque or spin-transfer torque sw…
Non-equilibrium Green's function technique has been used to calculate spin-dependent electronic transport through a quantum dot in the Kondo regime. The dot is described by the Anderson Hamiltonian and is coupled either symmetrically or asymmetrically to ferromagnetic leads, whose magnetic moments are noncollinear. It is shown that the splitting of the zero bias Kondo anomaly in differential conductance decreases monotonically with increasing angle between magnetizations, and for antiparallel configuration it vanishes in the symmetrical case while remains finite in the asymmetrical one.
Transport through zincblende magnetic semiconductors with magnetic domain walls is studied theoretically. We show that these magnetic domain walls have an intrinsic resistance due to the spin-orbit interaction. The intrinsic resistance is independent of the domain wall shape and width when the latter is larger than the Fermi wavelength. For typical parameters, the intrinsic domain wall resistance is comparable to the Sharvin resistance and should be experimentally measurable.
We theoretically investigate the magnetization inside a normal metal containing the Rashba spin-orbit interaction (RSOI) induced by the proximity effect in an s-wave superconductor/normal metal/ferromagnetic metal/s-wave superconductor (S/N/F/S) Josephson junction. By solving the linearized Usadel equation taking account of the RSOI,we find that the direction of the magnetization induced by the proximity effect in N can be reversed by tuning the RSOI.Moreover, we also find that the direction of the magnetization inside N can be reversed by changing the superconducting phase difference, i.e., J…
We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a strongly exchange coupled (Ga,Mn)As interface layer in addition to the biassed bulk of the (Ga,Mn)As film. The interface layer remains polarized at room temperature.
We investigate the interplay between ferromagnetic and superconducting order at the edge of a quantum spin Hall insulator. Using complementary analytical and self-consistent numerical approaches, we study a ferromagnetic Josephson junction and show how the direct coupling between magnetism and the superconducting U(1) phase gives rise to several unusual phenomena which distinguishes the present system from its non-topological equivalent. In particular, we demonstrate how the anomalous current-phase relation triggers supercurrent-induced magnetization dynamics and also study the spatial localiz…
The phenomenological theory for "topological" Hall effect (THE) is proposed. The theory can be used for qualitative analysis of THE in the medium with arbitrary magnetization distribution. In the paper the cylindrical particle with "vortex" magnetization is considered. The hysteresis loop of THE is qualitatively different comparing to abnormal Hall effect. The estimation of THE magnitude in the "vortex" particle is made. For Co particle with 100 nm diameter the THE exceeds normal and abnormal Hall effects until an external magnetic field less than 200 Oe.
We provide a derivation of a spin Skyrmion number classification for two-dimensional topological superconductors constructed from ferromagnetic and Rashba spin-orbit coupled semiconductor-superconductor heterostructures. We show that in the non-trivial topological phase, characterized by a non-zero Chern number, there is always a topological spin texture in the occupied bands represented by a Skyrmion number. The Skyrmion number has the advantage of being both physically intuitive and directly measurable using spin-sensitive band structure imaging techniques. In addition, we show that the Skyr…
We predict that the Curie temperature of a ferromagnetic resonant tunneling diode will decrease abruptly, by approximately a factor of two, when the downstream chemical potential falls below the quantum well resonance energy. This property follows from elementary quantum transport theory notions combined with a mean field description of diluted magnetic semiconductor ferromagnetism. We illustrate this effect by solving coupled non-equilibrium Green's function, magnetic mean-field, and electrostatic Poisson equations self-consistently to predict the bias voltage and temperature dependence of th…
We use micromagnetic simulation to demonstrate layer-selective detection of magnetization directions from magnetic dots having two recording layers by using a spin-torque oscillator (STO) as a read device. This method is based on ferromagnetic resonance (FMR) excitation of recording-layer magnetizations by the microwave field from the STO. The FMR excitation affects the oscillation of the STO, which is utilized to sense the magnetization states in a recording layer. The recording layers are designed to have different FMR frequencies so that the FMR excitation is selectively induced by tuning t…
We report Coulomb blockade transport studies of semiconducting InAs nanowires grown with epitaxial superconducting Al and ferromagnetic insulator EuS on overlapping facets. Comparing experiment to a theoretical model, we associate cotunneling features in even-odd bias spectra with spin-polarized Andreev levels. Results are consistent with zero-field spin splitting exceeding the induced superconducting gap. Energies of subgap states are tunable on either side of zero via electrostatic gates.
Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N = 3 splits clearly without external magnetic fields. With applying magnetic fields (B), the splitting is gradually reduced, and then the Kondo effect is almost restored at B = 1.2 T. This means that, in the Kondo regime, an inverse effective magnetic field of B ~ 1.2 T can be applied to the QD in the paralle…
We present a theoretical survey of ferromagnetic transition temperatures in cubic (III,Mn)V semiconductors based on a model with $S=5/2$ local moments exchange-coupled to itinerant holes in the host semiconductor valence band. Starting from the simplest mean-field theory of this model, we estimate the $T_c$ enhancement due to exchange and correlation in the itinerant-hole system, and the $T_c$ suppression due to collective fluctuations of the ordered moments. We show that high critical temperatures in these ferromagnetic semiconductors require both the large magnetic susceptibility contributio…
We report valence and conduction band alignments and offsets for heterojunctions between CdCr2Se4, an n-type ferromagnetic semiconductor, and the non-magnetic materials Si and GaAs, evaluated using density functional theory. We explore numerically the impact of different interface features on the type of band alignment and the magnitude of the offsets. For example, we find it is energetically favorable to deplete Cr atoms from the layers at the interface; this also leads to band alignments smaller in magnitude compared to those obtained for Cr-rich interfaces and ideal for electrical spin-inje…
Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is found to be sensitive to the orientation of the current with respect to the crystalline axes. The dependence of the spin-orbit effective magnetic field on the direction and magnitude of the current is determined from the shifts in the magnetization switching angle. We find that the strain induced effective magnetic field is about three times as large as the Ra…
The angular momentum interconversion between electron spin and other type of angular momenta is useful to develop new spintronic functionalities. The conversions from the angular momentum of photon and mechanical rotation to ferromagnetic spin moment have been well studied. While the recent studies theoretically suggested circular vibration of atoms works as angular momentum of phonon, the direct experimental demonstration of conversion to spin moments remains to be performed. Here we demonstrate that the phonon angular momentum of surface acoustic wave can control the magnetization of a ferro…
We present a comprehensive theory of spin transport in a non-degenerate semiconductor that is in contact with multiple ferromagnetic terminals. The spin dynamics in the semiconductor is studied during a perturbation of a general, non-collinear magnetization configuration and a method is shown to identify the various configurations from current signals. The conventional Landauer-Büttiker description for spin transport across Schottky contacts is generalized by the use of a non-linearized I-V relation, and it is extended by taking into account non-coherent transport mechanisms. The theory is use…
We study the dc transport properties of (Ga,Mn)As diluted magnetic semiconductors with Mn concentration varying from 1.5% to 8%. Both diagonal and Hall components of the conductivity tensor are strongly sensitive to the magnetic state of these semiconductors. Transport data obtained at low temperatures are discussed theoretically within a model of band-hole quasiparticles with a finite spectral width due to elastic scattering from Mn and compensating defects. The theoretical results are in good agreement with measured anomalous Hall effect and anisotropic longitudinal magnetoresistance data. T…
We study current induced magnetization dynamics in a long thin ferromagnetic wire with Dzyaloshinskii-Moriya interaction (DMI). We find a spiral domain wall configuration of the magnetization and obtain an analytical expression for the width of the domain wall as a function of the interaction strengths. Our findings show that above a certain value of DMI a domain wall configuration cannot exist in the wire. Below this value we determine the domain wall dynamics for small currents, and calculate the drift velocity of the domain wall along the wire. We show that the DMI suppresses the minimum va…
Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field and local proximitized magnetic exchange. In this work, we present lattice matched hybrid epitaxy of semiconductor - ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure as well as their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the bandgap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray …
