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arXiv 0711.2124cond-mat.mes-hallcond-mat.mtrl-sci
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Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes

K. Hamaya, M. Kitabatake, K. Shibata, M. Jung, M. Kawamura, K. Hirakawa, T. Machida, T. Taniyama, S. Ishida, Y. Arakawa

英文摘要:

Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N = 3 splits clearly without external magnetic fields. With applying magnetic fields (B), the splitting is gradually reduced, and then the Kondo effect is almost restored at B = 1.2 T. This means that, in the Kondo regime, an inverse effective magnetic field of B ~ 1.2 T can be applied to the QD in the parallel magnetic configuration of the ferromagnetic electrodes.

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