Spin-resolved bunching and noise characteristics in double quantum dots coupled to ferromagnetic electrodes
JunYan Luo, HuJun Jiao, BiTao Xiong, Xiao-Ling He, Changrong Wang
备注：
7 pages, 5 figures; Accepted by the J. Phys.: Conden. Matt; The paper is reorganzed and some new results, such as simulation of realtime single spin tunneling events is added
We study spin-resolved noise in Coulomb blockaded double quantum dots coupled to ferromagnetic electrodes. The modulation of the interdot coupling and spin polarization in the electrodes gives rise to an intriguing dynamical spin $\uparrow$-$\uparrow$ ($\downarrow$-$\downarrow$) blockade mechanism: Bunching of up (down) spins due to dynamical blockade of an up (down) spin. In contrast to the conventional dynamical spin $\uparrow$-$\downarrow$ bunching (bunching of up spins entailed by dynamical blockade of a down spin), this new bunching behavior is found to be intimately associated with the spin mutual-correlation, i.e., the noise fluctuation between opposite spin currents. We further demonstrate that the dynamical spin $\uparrow$-$\uparrow$ and $\uparrow$-$\downarrow$ bunching of tunneling events may be coexistent in the regime of weak interdot coupling and low spin polarization.
Shot noise measurements provide information on particles' charge and their correlations. We report on shot noise measurements in a ubiquitous quantum dot under a quantized magnetic field. The measured noise at the peaks of a sequence of conductance resonances was some nine times higher than expected; suggesting bunching of electrons as they traverse through the dot. This enhancement might be mediated by an additional weakly coupled level to the leads or an excited state. Note that in the absence of magnetic filed no bunching had been observed.
We study electron addition spectra of quantum dots in a broad range of electron occupancies starting from the first electron. Spectra for dots containing <200 electrons reveal a surprising feature. Electron additions are not evenly spaced in gate voltage. Rather, they group into bunches. With increasing electron number the bunching evolves from occurring randomly to periodically at about every fifth electron. The periodicity of the bunching and features in electron tunneling rates suggest that the bunching is associated with electron additions into spatially distinct regions within the dots.
We investigate quantum dynamics in the electron-nuclei coupled spin system in quantum dots and clarify the fundamental features of quantum correlation induced via successive electron spin measurements. This quantum correlation leads to interesting phenomena such as the bunching of outcomes in the electron spin measurements and the revival of an arbitrary initial electron spin state. The nuclear spin system is also affected by the quantum correlation and is in fact squeezed via conditional measurements or postselection. This squeezing is confirmed by calculating the increase in the purity of th…
One of the long-standing goals of quantum transport is to use the noise, rather than the average current, for information processing. However, achieving this requires on-demand control of quantum fluctuations in the electric current. In this paper, we demonstrate theoretically that transport through a molecular spin-valve provides access to many different statistics of electron tunneling events. Simply by changing highly tunable parameters, such as electrode spin-polarization, magnetization angle, and voltage, one is able to switch between Poisson behavior, bunching and anti-bunching of electr…
We study the transport properties of two double quantum dots in a parallel arrangement at temperatures of a few Kelvin. Thereby, we show that decoherence entailed by the substrate phonons affects the shot noise. For asymmetric coupling between the dots and the respective lead, the current noise is sub-Poissonian for resonant tunneling, but super-Poissonian in the vicinity of the resonances. Our results indicate that phonon emission and absorption is responsible for the shot noise enhancement. The observed asymmetry of the peaks at low temperatures stems from spontaneous emission.
We have fabricated single electron tunneling structures by forming nanogap metallic electrodes directly upon single self-assembled InAs quantum dots (QDs). The fabricated samples exhibited clear Coulomb blockade effects. Furthermore, a clear Kondo effect was observed when strong coupling between the electrodes and the QDs was realized using a large QD with a diameter of ~ 100 nm. From the temperature dependence of the linear conductance at the Kondo valley, the Kondo temperature TK was determined to be ~ 81 K. This is the highest TK ever reported for artificial quantum nanostructures.
In quantum optics the $g^{(2)}$-function is a standard tool to investigate photon emission statistics. We define a $g^{(2)}$-function for electronic transport and use it to investigate the bunching and anti-bunching of electron currents. Importantly, we show that super-Poissonian electron statistics do not necessarily imply electron bunching, and that sub-Poissonian statistics do not imply anti-bunching. We discuss the information contained in $g^{(2)}(τ)$ for several typical examples of transport through nano-structures such as few-level quantum dots.
We study electron transport through a triple quantum dot in ring configuration at finite bias. In particular, we analyze the influence of a gate voltage that detunes one of the dots, such that one branch of the interferometer becomes off-resonant. It turns out that then interference effects fade away, i.e., the current becomes independent of a penetrating flux and the detuning. The noise properties which are characterized by the full-counting statistics, however, are governed by bunching effects that may be tuned by the gate voltage. Analytical results for limiting cases support this picture. …
Aharonov-Bohm (AB) oscillations are studied for a parallel coupled vertical double quantum dot with a common source and drain electrode. We observe AB oscillations of current via a one-electron bonding state as the ground state and an anti-bonding state as the excited state. As the center gate voltage becomes more negative, the oscillation period is clearly halved for both the bonding and antibonding states, and the phase changes by half a period for the antibonding state. This result can be explained by a calculation that takes account of the indirect interdot coupling via the two electrodes.
The quantum dot arrays (QDAs) embedded into inhomogeneous nanowires connected to metallic electrodes show an electron heat rectification effect, which is attributed to the thermal voltage arising from a temperature bias and the QDA with a broken spatial inversion symmetry. The staircase energy levels of QDAs can be controlled to the resonant and off resonant transports for electrons in the forward and backward temperature biases, respectively. The effect of electron Coulomb interactions on the rectification efficiency of heat diode is clarified by the case of double QDs. We find that it is imp…
Due to the Fermi-Dirac statistics of electrons the temporal correlations of tunneling events in a double barrier setup are typically negative. Here, we investigate the shot noise behavior of a system of two capacitively coupled quantum dot states by means of a Master equation model. In an asymmetric setup positive correlations in the tunneling current can arise due to the bunching of tunneling events. The underlying mechanism will be discussed in detail in terms of the current-current correlation function and the frequency-dependent Fano factor.
We have investigated the dynamics of the electron-nuclei coupled system in quantum dots. The bunching of results of the electron spin measurements and the revival in the conditional probabilities are salient features of the nuclear spin memory. The underlying mechanism is the squeezing of the nuclear spin state and the correlations between the successive electron spin measurements. Further we make a proposal for the preparation and detection of superposition states of nuclear spins merely relying on electron spin measurements. For unpolarized, completely random nuclear spin state one can still…
We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 $μ$m telecom C-band. The luminescence decay is well described in terms of the theoretical interband transition strength without the impact of nonradiative recombination. The intensity autocorrelation function shows clear anti-bunching photon statistics. The results suggest that our quantum dots are useful for constructing a practical source of single photons and quantum entangled photon…
Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more scalable designs that reduce the fabrication complexity and electrode density are needed. Here, we introduce a two-metal-layer MOS quantum dot device in which tunnel barriers are naturally formed by gaps between electrodes and controlled by adjacent accumulation gates. The accumulation gates define the electron reservoirs and provide tunability of the tunnel rat…
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We analyze shot noise in a magnetic tunnel junction with a two-level quantum dot attached to the magnetic electrodes. The considerations are limited to the case when some transport channels are suppressed at low temperatures. Coupling of the two dot's levels to the electrodes are assumed to be generally different and also spin-dependent. To calculate the shot noise we apply the approach based on the full counting statistics. The approach is used to account for experimental data obtained in magnetic tunnel junctions with organic barriers. The experimentally observed Fano factors correspond to t…
We have fabricated superconductor-quantum dot-superconductor (SC-QD-SC) junctions by using SC aluminum electrodes with narrow gaps laterally contacting a single self-assembled InAs QD. The fabricated junctions exhibited clear Coulomb staircases and Coulomb oscillations at 40 mK. Furthermore, clear suppression in conductance was observed for the source-drain voltage $|V_{\rm SD}| < 2Δ/e$, where $Δ$ is the SC energy gap of Al. The absence of Josephson current that flows through QDs is due to the strong Coulomb interaction and non-negligible thermal fluctuation in our measurement system.
We consider electrical transport through single molecules coupled to metal electrodes via tunneling barriers. Approximating the molecule by the Anderson impurity model as the simplest model which includes Coulomb charging effects, we extend the ``orthodox'' theory to expand current and shot noise systematically order by order in the tunnel couplings. In particular, we show that a combined measurement of current and shot noise reveals detailed information of the system even in the weak-coupling limit, such as the ratio of the tunnel-coupling strengths of the molecule to the left and right elect…
Spin-dependent transport through a multilevel quantum dot weakly coupled to ferromagnetic leads is analyzed theoretically by means of the real-time diagrammatic technique. Both the sequential and cotunneling processes are taken into account, which makes the results on tunnel magnetoresistance (TMR) and shot noise applicable in the whole range of relevant bias and gate voltages. Suppression of the TMR due to inelastic cotunneling and super-Poissonian shot noise have been found in some of the Coulomb blockade regions. Furthermore, in the Coulomb blockade regime there is an additional contributio…
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Recent advances in nanotechnology have enabled researchers to manipulate small collections of quantum mechanical objects with unprecedented accuracy. In semiconductor quantum dot qubits, this manipulation requires controlling the dot orbital energies, tunnel couplings, and the electron occupations. These properties all depend on the voltages placed on the metallic electrodes that define the device, whose positions are fixed once the device is fabricated. While there has been much success with small numbers of dots, as the number of dots grows, it will be increasingly useful to control these sy…
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We present quantum transport measurements of interacting parallel quantum dots formed in the strands of a carbon nanotube rope. In this molecular quantum dot system, transport is dominated by one quantum dot, while additional resonances from parallel side dots appear, which exhibit a weak gate coupling. This differential gating effect provides a tunability of the quantum dot system with only one gate electrode and provides control over the carbon nanotube strand that carries the current. By tuning the system to different states we use quantum transport as a spectroscopic tool to investigate th…
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