Polaronic memristor strongly coupled to electrodes

Perfect memristor: non-volatility, switching and negative differential resistance

We propose a simple model of a nanoswitch as a memory resistor. The resistance of the nanoswitch is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the presence of Joule's heat dissipation. In the case of a single potential minimum, we observe hysteresis of the resistance at finite applied currents and a negative differential resistance. For two (or more) minima the switching mechanism is non-volatile, meaning that the memristor can switch to a resistive state of choice and stay there. Moreover, the noise s…

Spin-Polaronic Effects in Electric Shuttling in a Single Molecule Transistor with Magnetic Leads

Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and electromechanical coupling-induced (spin-polaronic) effects that determine strongly nonlinear current-voltage characteristics were found. In the low-voltage regime of electron transport the voltage-dependent and exchange field-induced displacement of quantum dot towards the source electrode leads to nonmonotonic behavior of differential conductance that demons…

Which Memristor Theory is Best for Relating Devices Properties to Memristive Function?

There are three theoretical models which purport to relate experimentally-measurable or fabrication-controllable device properties to the memristor's operation: 1. Strukov et al's phenomenological model; 2. Georgiou et al's Bernoulli rewrite of that phenomenological model; 3. Gale's memory-conservation model. They differ in their prediction of the effect on memristance of changing the electrode size and factors that affect the hysteresis. Using a batch of TiO$_2$ sol-gel memristors fabricated with different top electrode widths we test and compare these three theories. It was found that, contr…

忆阻纳米结的过偏置发光

Overbias Light Emission From Memristive Nanojunctions

本研究发现忆阻纳米结阻变时会产生光子能量超开关电压对应电子最大动能的过偏置发光，可用有效温度超2000K的非平衡电子热辐射模型解释，为片上发光、光互连及忆阻网络神经通路监测提供新方向。

电沉积普鲁士蓝类材料中纳米级电阻开关行为的研究：通过K离子插层进行探针分析

Nanoscale resistive switching in electrodeposited MOF Prussian blue analogs driven by K-ion intercalation probed by C-AFM

研究通过C-AFM揭示了K离子插层在普鲁士蓝类材料中的纳米级电阻开关机制，展示了其可调性和应用潜力。

二维材料忆阻器中聚合物残留的非易失性阻变

Non-Volatile Resistive Switching of Polymer Residues in 2D Material Memristors

该研究揭示二维材料忆阻器中的阻变可能源于制造过程中残留的聚合物，而非二维材料本身，并强调需通过参考结构和原子尺度表征来正确评估二维材料作为开关层的真实潜力。

垂直排列的MoS$_2$薄膜中采用Cu、Ag和Au电极的电阻开关行为

Resistive switching behaviors in vertically aligned MoS$_2$ films with Cu, Ag, and Au electrodes

本研究探究垂直排列MoS$_2$薄膜中Ag、Cu、Au电极的忆阻行为，发现Cu实现稳定非易失开关，Ag为易失性，Au无响应，为神经形态电路制造提供新途径。

Quasi-HfO$_x$/ AlO$_y$ and AlO$_y$/ HfO$_x$ Based Memristor Devices: Role of Bi-layered Oxides in Digital Set and Analog Reset Switching

Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs. Also, with the known electrical response of a memristor, one can confirm its usefulness in non-volatile memory and/or in artificial neural networks. Although bi- or multi-layered oxides have been reported to improve the switching performance, compared to the single oxide layer, the detailed explanation about why the switching can easily be improved for some oxides combinations is still missing. Herein, we fabricated …

Multi-level resistance switching and random telegraph noise analysis of nitride based memristors

Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices exhibit usually memristive properties with many discrete resistance levels and implement artificial synapses. The last years, researchers have demonstrated memristive chips as accelerators in computing, following new in-memory and neuromorphic computational approaches. Many different metal oxides have been used as resistance switching materials in MIM or MIS st…

Bipolar electrical switching in metal-metal contacts

Electrical switching has been observed in carefully designed metal-insulator-metal devices built at small geometries. These devices are also commonly known as memristors and consist of specific materials such as transition metal oxides, chalcogenides, perovskites, oxides with valence defects, or a combination of an inert and an electrochemically active electrode. No simple physical device has been reported to exhibit electrical switching. We have discovered that a simple point-contact or a granular arrangement formed of metal pieces exhibits bipolar switching. These devices, referred to as coh…

Space charge dynamics in solid electrolytes with steric effect and Vegard stresses: resistive switching and ferroelectric-like hysteresis of electromechanical response

We performed self-consistent modelling of electrotransport and electromechanical response of solid electrolyte thin films allowing for steric effects of mobile charged defects (ions, protons or vacancies), electron degeneration and Vegard stresses. We establish correlations between the features of the space-charge dynamics, current-voltage and bending-voltage curves in the wide frequency range of applied electric voltage. The pronounced ferroelectric-like hysteresis of bending-voltage loops and current maxima on double hysteresis current-voltage loops appear for the electron-open electrodes. T…