基于Quasi-HfO $_x$ / AlO $_y$和AlO $_y$ / HfO $_x$的忆阻器器件：双层氧化物在数字置位和模拟复位开关中的作用
Quasi-HfO$_x$/ AlO$_y$ and AlO$_y$/ HfO$_x$ Based Memristor Devices: Role of Bi-layered Oxides in Digital Set and Analog Reset Switching
摘要：
了解氧化物基忆阻器器件的阻变行为或电阻变化，对于预测它们对已知电输入的响应至关重要。此外，利用忆阻器的已知电响应，可以确认其在非易失性存储器和/或人工神经网络中的有用性。尽管已经报道了双层或多层氧化物与单层氧化物相比可以改善开关性能，但是仍然缺少关于为什么对于某些氧化物组合可以容易地改善开关的详细解释。在此，我们制备了两种类型的双层异质结器件，准HfO $_x$ /AlO $_y$和AlO $_y$ /HfO $_x$夹在Au电极之间，并研究了它们的电响应。为了更深入地理解开关机制，还考虑了仅HfOx器件的性能，其用作控制器件。双层异质结构的作用进行了研究，使用实验和模拟结果。我们的研究结果表明，协同开关性能可以实现与这些材料和/或设备的适当组合。这些结果为设计用于模拟响应的更有效的双层或多层忆阻器器件开辟了途径。
英文摘要：
Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs. Also, with the known electrical response of a memristor, one can confirm its usefulness in non-volatile memory and/or in artificial neural networks. Although bi- or multi-layered oxides have been reported to improve the switching performance, compared to the single oxide layer, the detailed explanation about why the switching can easily be improved for some oxides combinations is still missing. Herein, we fabricated two types of bi-layered heterostructure devices, quasi-HfO$_x$/AlO$_y$ and AlO$_y$/HfO$_x$ sandwiched between Au electrodes, and their electrical responses are investigated. For a deeper understanding of the switching mechanism, the performance of a HfOx only device is also considered, which serves as a control device. The role of bi-layered heterostructures is investigated using both the experimental and simulated results. Our results suggest that synergistic switching performance can be achieved with a proper combination of these materials and/or devices. These results open the avenue for designing more efficient double- or multi-layers memristor devices for an analog response.
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