Memristors have been at the forefront of nanoelectronics research for the last decade, offering a valuable component to reconfigurable computing. Their attributes have been studied extensively along with applications that leverage their state-dependent programmability in a static fashion. However, practical applications of memristor-based AC circuits have been rather sparse, with only a few examples found in the literature where their use is emulated at higher frequencies. In this work, we study the behavior of metal-oxide memristors under an AC perturbation in a range of frequencies, from 10^3 to 10^7 Hz. Metal-oxide memristors are found to behave as RC low-pass filters and they present a variable cut-off frequency when their state is switched, thus providing a window of reconfigurability when used as filters. We further study this behaviour across distinct material systems and we show that the usable reconfigurability window of the devices can be tailored to encompass specific frequency ranges by amending the devices' capacitance. This study extends current knowledge on metal-oxide memristors by characterising their frequency dependent characteristics, providing useful insights for their use in reconfigurable AC circuits.
Analog programming of CMOS-compatible Al$_2$O$_3$/TiO$_\textrm{2-x}$ memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming
Electron spin transport in a metal-oxide-semiconductor Si two-dimensional inversion channel: Effect of hydrogen annealing on spin scattering mechanism and spin lifetime
Novel hypostasis of old materials in oxide electronics: metal oxides for resistive random access memory applications
过渡金属氧化物薄膜，表现出阈值和非易失性存储器电阻开关的效果，最近已被提出作为存储类存储器的候选材料。在这项工作中，我们描述了一些不同的过渡金属（V，Ti，Fe，Nb，Mo，W，Hf，Zr，Mn，Y和Ta）的氧化物膜的阳极氧化获得的阈值开关的实验结果。然后，结果有关的影响，电阻开关的PMOS和MOS结构的基础上，如V2 O 5，Nb 2 O 5，和NiO的氧化物。结果表明，基于Au/V2 O 5/SiO2/Si、Nb/Nb 2 O 5/Au和Pt/NiO/Pt的三明治结构可以用作ReRAM应用的存储元件。最后，为了从理论上描述非易失性单极开关的效果，在Pt-NiO-Pt结构的模型近似。
Comprehensive study of amorphous metal oxide and Ta$_2$O$_5$-based mixed oxide coatings for gravitational-wave detectors
现有干涉型引力波探测器的高精细度光学腔的灵敏度受到激光量子噪声和涂层热噪声的限制。热噪声与构成干涉仪测试质量的材料中的内能耗散有关。由于问题的复杂性和缺乏跨越大范围材料的研究，我们对内部摩擦如何与非晶材料结构联系在一起的理解是有限的。我们提出了一个系统的研究非晶金属氧化物和Ta $_2$ O $_5$为基础的混合氧化物涂层，以评估其适用于低布朗噪声实验。结果表明，金属氧化物的机械损耗与它们的非晶形态有关，连续的无规网络材料如SiO $_2$和GeO $_2$具有最低的损耗角。我们评估了不同的Ta $_2$ O $_5$基混合氧化物薄膜，并研究了掺杂剂对涂层的光学和弹性性能的影响。我们估计了与采用每种混合氧化物作为高折射率材料的高反射率多层堆叠相关的热噪声。我们的结论是，目前的高折射率材料的TiO $_2$掺杂的Ta $_2$ O $_5$是最佳的选择，以降低热噪声之间的Ta $_2$ O $_5$基混合氧化物涂层与低掺杂浓度。
