半绝缘GaAs -金属氧化物界面上的高迁移率导电沟道
High mobility conducting channel at semi-insulating GaAs -- metal oxide interfaces
摘要：
缺乏有效的GaAs钝化技术限制了III-V族半导体在现代电子学中的使用。这里报告的效果可能会导致这个长期存在的问题的解决方案。我们发现，一个导电的界面通道形成时，绝缘金属氧化物薄膜沉积在未经处理的半绝缘GaAs晶片上的反应RF溅射在氩/氧等离子体。导电沟道为n型，表面电荷密度为10^7 ~ 10^10 cm^-2，霍尔迁移率高达6000 cm ^2/Vsec，具体取决于沉积过程中的射频等离子体激发功率和氧含量。通过沉积任何测试的金属氧化物MgO、SiO2、Al 2 O3和HfO 2来形成导电通道。
英文摘要：
Absence of an efficient technology of GaAs passivation limits the use of III-V semiconductors in modern electronics. The effect reported here can possibly lead to a solution of this long standing problem. We found that an electrically conducting interfacial channel is formed when insulating metal oxide dielectrics are deposited on untreated semi-insulating GaAs wafers by reactive RF sputtering in argon/oxygen plasma. The conducting channel is n-type with the surface charge density of 10^7 to 10^10 cm^-2 and Hall mobility as high as 6000 cm^2/Vsec, depending on the RF plasma excitation power and oxygen content during the deposition. The conducting channel is formed by depositing any of the tested metal oxide dielectrics: MgO, SiO2, Al2O3 and HfO2.
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