GaAs中施主注入背栅用于MBE生长的最高迁移率二维电子系统
Donor implanted Back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems
摘要：
三种不同的元素，硅，硒，碲，离子注入砷化镓形成一个导电层，作为背栅极的分子束外延（MBE）过度生长的二维电子气（2DEG）。虽然重离子碲在砷化镓中产生太多的损伤而不能形成导电层，但硅和硒与MBE生长的高质量2DEG结合显示出有希望的结果。与非注入参考样本相比，硅和硒注入结构都实现了类似的2DEG迁移率。与背栅的单独接触具有挑战性。然而，在MBE生长之前退火的硅注入结构导致功能背栅，并且2DEG的电子密度经由背栅调谐。
英文摘要：
Three different elements, Silicon, Selenium, and Tellurium, are ion-implanted in Gallium arsenide to form a conducting layer that serves as a back-gate to a molecular beam epitaxy (MBE) overgrown two-dimensional electron gas (2DEG). While the heavy ion Tellurium creates too many damages in the gallium arsenide to form a conducting layer, both Silicon and Selenium show promising results combined with MBE-grown high-quality 2DEGs. Similar 2DEG mobility compared to non-implanted reference samples is achieved for both Silicon and Selenium implanted structures. Individual contacts to the back-gate are challenging. However, Silicon implanted structures, annealed before the MBE growth, result in a function back-gate, and the electron density of the 2DEG is tuned via the back-gate.
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