A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor

具有超薄铝钪氮化物和二维沟道的低压铁电场效应晶体管

Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels

该研究在超薄AlScN铁电薄膜上制备MoS2单层沟道FeFET，通过减薄铁电层将栅极电压降至3V以下，并系统分析厚度、制备方法和环境对磁滞行为的影响，为低功耗CMOS兼容存储计算器件提供优化路径。

铝钪氮作为1000°C下的功能材料

Aluminum Scandium Nitride as a Functional Material at 1000°C

该研究制备并表征TaSi2/Al0.7Sc0.3N/TaSi2电容器，证明AlScN在1000°C极端环境下仍保持结构与功能稳定，并显著提升压电及机电耦合性能。

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor

In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a ferroelectric field-effect transistor (FE-FET). However, subsequent efforts to produce a practical, compact FE-FET have been plagued by low retention and incompatibility with Complementary Metal Oxide Semiconductor (CMOS) process integration. These difficulties led to the development of trapped-charge based memory devices (also called floating gate or flash memory), and these are now the mainstream non-volatile memo…

混合氮化钪铝/氮化硅集成光子电路

Hybrid Scandium Aluminum Nitride/Silicon Nitride Integrated Photonic Circuits

针对掺钪氮化铝光学损耗高的问题，提出单片集成Si₃N₄-ScAlN波导平台，实现1.03 dB/cm的低传播损耗，兼具ScAlN的功能特性，为相关光子集成电路应用开辟新路径。

通过高压溅射在硅上生长氧化钪的工艺优化

Optimization of scandium oxide growth by high pressure sputtering on silicon

本研究验证高压溅射在硅上沉积氧化钪的可行性，通过调控压强与功率优化薄膜及界面性能，发现高压可降低界面缺陷、抑制界面氧化层生成并实现厚度精准控制。

磁控溅射外延制备的纤维织构与外延钼薄膜的结构和电学性能

Structural and electrical properties of fiber textured and epitaxial molybdenum thin films prepared by magnetron sputter epitaxy

本文系统研究生长温度对纤维织构与外延AlN上磁控溅射Mo薄膜结构及电学性能的影响，揭示晶粒尺寸和晶界类型对电阻率的作用规律。