Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more scalable designs that reduce the fabrication complexity and electrode density are needed. Here, we introduce a two-metal-layer MOS quantum dot device in which tunnel barriers are naturally formed by gaps between electrodes and controlled by adjacent accumulation gates. The accumulation gates define the electron reservoirs and provide tunability of the tunnel rate of nearly 8.5 decades/V, determined by a combination of charge sensor electron counting measurements and by direct transport. The valley splitting in the few-electron regime is probed by magneto-spectroscopy up to a field of 6 T, providing an estimate for the ground-state gap of 290 $μ$eV. We show preliminary characterization of a double quantum dot, demonstrating that this design can be extended to linear dot arrays that should be useful in applications like electron shuttling. These results motivate further innovations in MOS quantum dot design that can improve the scalability prospects for spin qubits.
We have fabricated single electron tunneling structures by forming nanogap metallic electrodes directly upon single self-assembled InAs quantum dots (QDs). The fabricated samples exhibited clear Coulomb blockade effects. Furthermore, a clear Kondo effect was observed when strong coupling between the electrodes and the QDs was realized using a large QD with a diameter of ~ 100 nm. From the temperature dependence of the linear conductance at the Kondo valley, the Kondo temperature TK was determined to be ~ 81 K. This is the highest TK ever reported for artificial quantum nanostructures.
Aharonov-Bohm (AB) oscillations are studied for a parallel coupled vertical double quantum dot with a common source and drain electrode. We observe AB oscillations of current via a one-electron bonding state as the ground state and an anti-bonding state as the excited state. As the center gate voltage becomes more negative, the oscillation period is clearly halved for both the bonding and antibonding states, and the phase changes by half a period for the antibonding state. This result can be explained by a calculation that takes account of the indirect interdot coupling via the two electrodes.
The quantum dot arrays (QDAs) embedded into inhomogeneous nanowires connected to metallic electrodes show an electron heat rectification effect, which is attributed to the thermal voltage arising from a temperature bias and the QDA with a broken spatial inversion symmetry. The staircase energy levels of QDAs can be controlled to the resonant and off resonant transports for electrons in the forward and backward temperature biases, respectively. The effect of electron Coulomb interactions on the rectification efficiency of heat diode is clarified by the case of double QDs. We find that it is imp…
We study spin-resolved noise in Coulomb blockaded double quantum dots coupled to ferromagnetic electrodes. The modulation of the interdot coupling and spin polarization in the electrodes gives rise to an intriguing dynamical spin $\uparrow$-$\uparrow$ ($\downarrow$-$\downarrow$) blockade mechanism: Bunching of up (down) spins due to dynamical blockade of an up (down) spin. In contrast to the conventional dynamical spin $\uparrow$-$\downarrow$ bunching (bunching of up spins entailed by dynamical blockade of a down spin), this new bunching behavior is found to be intimately associated with the s…
We have fabricated superconductor-quantum dot-superconductor (SC-QD-SC) junctions by using SC aluminum electrodes with narrow gaps laterally contacting a single self-assembled InAs QD. The fabricated junctions exhibited clear Coulomb staircases and Coulomb oscillations at 40 mK. Furthermore, clear suppression in conductance was observed for the source-drain voltage $|V_{\rm SD}| < 2Δ/e$, where $Δ$ is the SC energy gap of Al. The absence of Josephson current that flows through QDs is due to the strong Coulomb interaction and non-negligible thermal fluctuation in our measurement system.
We analyze shot noise in a magnetic tunnel junction with a two-level quantum dot attached to the magnetic electrodes. The considerations are limited to the case when some transport channels are suppressed at low temperatures. Coupling of the two dot's levels to the electrodes are assumed to be generally different and also spin-dependent. To calculate the shot noise we apply the approach based on the full counting statistics. The approach is used to account for experimental data obtained in magnetic tunnel junctions with organic barriers. The experimentally observed Fano factors correspond to t…
We consider electrical transport through single molecules coupled to metal electrodes via tunneling barriers. Approximating the molecule by the Anderson impurity model as the simplest model which includes Coulomb charging effects, we extend the ``orthodox'' theory to expand current and shot noise systematically order by order in the tunnel couplings. In particular, we show that a combined measurement of current and shot noise reveals detailed information of the system even in the weak-coupling limit, such as the ratio of the tunnel-coupling strengths of the molecule to the left and right elect…
Optical and thermal effects in asymmetric supercapacitors, whose active-carbon (AC) electrodes were embedded with nano-Si (n-Si) quantum dots (QD), are reported. We describe two structures: (1) p-n like, obtained by using a polyethylimine (PEI) binder for the n-like electrode and a polyvinylpyrrolidone (PVP) binder for the p-like electrode; (2) a single component binder, poly(methyl methacrylate) (PMMA). In general, AC appears black to the naked eye and one may assume that it acts as a black body absorber, namely, indiscriminately absorbing all light spectra. Yet, on top of a flat lossy spectr…
Strong electron correlations and interference effects are discussed in parallel-coupled single-level and orbitally doubly degenerate quantum dots. The finite-U mean-field slave boson approach is used to study many-body effects. The analysis is carried out in a wide range of parameter space including both atomic-like and molecular-like Kondo regimes and taking into account various perturbations, like interdot tunneling, interdot interaction, mixing of the electrode channels and exchange interaction. We also discuss the influence of singularities of electronic structure and the impact of polariz…
Motivated by activities of several experimental groups we investigate electron transport through two coherent, strongly coupled quantum dots ("double quantum dots"), taking into account both intra- and inter-dot Coulomb interactions. The shot noise in this system is very sensitive to the internal electronic level structure of the coupled dot system and its specific coupling to the electrodes. Accordingly a comparison between experiments and our predictions should allow for a characterization of the relevant parameters. We discuss in detail the effect of asymmetries, either asymmetries in the c…
We present a self-contained theoretical and computational framework for dynamics following photoexcitation in quantum dots near planar interfaces. A microscopic Hamiltonian parameterized by first principles calculations is merged with a reduced density matrix formalism that allows for the prediction of time-dependent charge and energy transfer processes between the quantum dot and the electrode. While treating charge and energy transfer processes on an equal footing, the non-perturbative effects of sudden charge transitions on the Fermi sea of the electrode are included. We illustrate the form…
We show that quantum dots and quantum wires are formed underneath metal electrodes deposited on a planar semiconductor heterostructure containing a quantum well. The confinement is due to the self-focusing mechanism of an electron wave packet interacting with the charge induced on the metal surface. Induced quantum wires guide the transfer of electrons along metal paths and induced quantum dots store the electrons in specific locations of the nanostructure. Induced dots and wires can be useful for devices operating on the electron spin.
We have observed the Kondo effect in strongly coupled semiconducting nanowire quantum dots. The devices are made from indium arsenide nanowires, grown by molecular beam epitaxy, and contacted by titanium leads. The device transparency can be tuned by changing the potential on a gate electrode, and for increasing transparencies the effects dominating the transport changes from Coulomb Blockade to Universal Conductance Fluctuations with Kondo physics appearing in the intermediate region.
We report on two top-gate defined, coupled quantum dots in a semiconducting single wall carbon nanotube, constituting a tunable double quantum dot system. The single wall carbon nanotubes are contacted by titanium electrodes, and gated by three narrow top-gate electrodes as well as a back-gate. We show that a bias spectroscopy plot on just one of the two quantum dots can be used to extract the addition energy of both quantum dots. Furthermore, honeycomb charge stability diagrams are analyzed by an electrostatic capacitor model that includes cross capacitances, and we extract the coupling energ…
Here we study the polaronic transport through molecules weakly connected to metallic electrodes in the nonlinear response regime. Molecule itself is treated as a quantum dot with discrete energy levels, its connection to the electrodes is described within the wide-band approximation, while the charging is incorporated by means of the self-consistent potential. Nonperturbative computational scheme, used in this work, is based on the Green's function theory within the framework of mapping technique (GFT-MT). This method transforms the many-body electron-phonon interaction problem into a one-body…
We study theoretically the Kondo effect in carbon nanotube quantum dot attached to polarized electrodes. Since both spin and orbit degrees of freedom are involved in such a system, the electrode polarization contains the spin- and orbit-polarizations as well as the Kramers polarization in the presence of the spin-orbit coupling. In this paper we focus on the compensation effect of the effective fields induced by different polarizations by applying magnetic field. The main results are i) while the effective fields induced by the spin- and orbit-polarizations remove the degeneracy in the Kondo e…
We present a simple technique which uses a self-aligned oxide etch to suspend individual single-wall carbon nanotubes between metallic electrodes. This enables one to compare the properties of a particular nanotube before and after suspension, as well as to study transport in suspended tubes. As an example of the utility of the technique, we study quantum dots in suspended tubes, finding that their capacitances are reduced owing to the removal of the dielectric substrate.
Surface graphene guides were interfaced with an array of individual semiconductor quantum dots, whose position was commensurate with the optical guide modes. The surface guide served as a channel for a Field Effect Transistor (FET) while the dots were placed within the capacitor formed between the graphene channel and the gate electrode. We report on negative differential photo-related conductance under light and a diminishing fluorescence effect as a function of bias. We suggest that the quenched fluorescence may be hindered, to some degree, by incorporating the QD in a resonator, which is tu…
The electrical conductance, thermal conductance, thermal power and figure of merit (ZT) of semiconductor quantum dots (QDs) embedded into an insulator matrix connected with metallic electrodes are theoretically investigated in the Coulomb blockade regime. The multilevel Anderson model is used to simulate the multiple QDs junction system. The charge and heat currents in the sequential tunneling process are calculated by the Keldysh Green function technique. In the linear response regime the ZT values are still very impressive in the small tunneling rates case, although the effect of electron Co…
We study a single-level quantum dot strongly coupled to a superconducting lead and tunnel-coupled to a normal electrode which can exchange energy with a single-mode resonator. We show that a such system can sustain lasing characterized by a sub-Poissonian Fock-state distribution of the resonator. The lasing regime is clearly identifiable in the subgap transport regime: in the resonant case, the current is pinned to the maximum value achievable in this hybrid nanostructure.
We investigated the peculiarities of non-equilibrium charge states and spin configurations in the system of two strongly coupled quantum dots (QDs) weakly connected to the electrodes in the presence of Coulomb correlations. We analyzed the modification of non-equilibrium charge states and different spin configurations of the system in a wide range of applied bias voltage and revealed well pronounced ranges of system parameters where negative tunneling conductivity appears due to the Coulomb correlations.
We investigate charge pumping in carbon nanotube quantum dots driven by the electric field of a surface acoustic wave. We find that at small driving amplitudes, the pumped current reverses polarity as the conductance is tuned through a Coulomb blockade peak using a gate electrode. We study the behavior as a function of wave amplitude, frequency and direction and develop a model in which our results can be understood as resulting from adiabatic charge redistribution between the leads and quantum dots on the nanotube.
Attractive electron correlations due to an electron-vibron interaction (EVI) can overcome the direct Coulomb repulsion of polarons in strongly deformable molecular quantum dots (MQDs). If it realizes, a switching appears in the I-V characteristics of the degenerate nonadiabatic molecular bridges weakly coupled to electrodes providing a route to ultrafast `memristors' (memory-resistors) as the basis for future oscillators, amplifers, and other important circuit elements. Here, we extend our theory of polaronic memristors to adiabatic MQDs strongly coupled to the leads and show that the degenera…
Self-assembled InAs quantum dots (QDs) are of great interest as components of optoelectronic devices that can operate at the quantum limit. The charge configuration, interdot coupling, and symmetry of complexes containing multiple QDs can all be tuned with applied electric fields, but the magnitude and angle of the electric field required to control each of these parameters depends on the orientation of the QD complex. We present a 4-electrode device compatible with optical excitation and emission that allows application of electric fields with arbitrary magnitudes and angles relative to isola…
In the present paper, the collective near-field effects in a two-graphene sheets plasmonic waveguide loaded with an array of Ag$_2$Se quantum dots excited by external radiation are theoretically studied. This research aims to develop a theoretical approach to realizing controllable excitation and the propagation of surface plasmon polaritons (SPPs) in planar graphene waveguides. The proposed model is based on the semiclassical description that implies the dispersion equation's solution for SPPs excited in two coupled graphene sheets and the embedded quantum dots' energy spectra analysis. Using…
Spin-polarized transport through a quantum dot strongly coupled to ferromagnetic electrodes with non-collinear magnetic moments is analyzed theoretically in terms of the non-equilibrium Green function formalism. Electrons in the dot are assumed to be coupled to a phonon bath. The influence of electron-phonon coupling on tunnelling current, linear and nonlinear conductance, and on tunnel magnetoresistance is studied in detail. Variation of the main Kondo peaks and phonon satellites with the angle between magnetic moments of the leads is analyzed.
We investigate cross-correlations in the tunneling currents through two parallel quantum dots coupled to independent electrodes and gates and interacting via an inter-dot Coulomb interaction. The correlations reveal additional information, beyond what can be learned from the current or conductance, about the dynamics of transport processes of the system. We find qualitatively different scenarios for the dependence of the cross-correlations on the two gate voltages. Reducing the temperature below the inter-dot Coulomb interaction, regions of a given sign change from spherical shapes to angular …
We investigated the tunneling current peculiarities in the system of two coupled by means of the external field quantum dots (QDs) weakly connected to the electrodes in the presence of Coulomb correlations. It was found that tuning of the external field frequency induces fast multiple tunneling current switching and leads to the negative tunneling conductivity. Special role of multi-electrons states was demonstrated. Moreover we revealed conditions for bistable behavior of the tunneling current in the coupled QDs with Coulomb correlations.
We report the experimental realization of double quantum dots in single-walled carbon nanotubes. The device consists of a nanotube with source and drain contact, and three additional top-gate electrodes in between. We show that, by energizing these top-gates, it is possible to locally gate a nanotube, to create a barrier, or to tune the chemical potential of a part of the nanotube. At low temperatures we find (for three different devices) that in certain ranges of top-gate voltages our device acts as a double quantum dot, evidenced by the typical honeycomb charge stability pattern.
The nonlinear thermoelectric properties of serially coupled quantum dots (SCQDs) embedded in a nanowire connected to metallic electrodes are theoretically studied in the Coulomb blockade regime. We demonstrate that the electron heat current of SCQDs exhibit a direction-dependent behavior (heat rectification) in an asymmetrical structure in which the electron Coulomb interactions are significant. The phonon thermal conductivity of the nanowire is also calculated, which is used to estimate the phonon heat current. Finally, we discuss how to reduce phonon heat current to allow observation of elec…
We demonstrate fully tunable single and double quantum dots in a one-dimensional hole system based on undoped Ge/Si core-shell nanowire heterostructures. The local hole density along the nanowire is controlled by applying voltages to five top gate electrodes with a periodicity of 80 nm, insulated from the wire by a 20 nm-thick HfO_2 dielectric film. Low-temperature transport measurements were used to investigate the magnetic field dependence of Coulomb blockade peaks in a single quantum dot and indicate a strongly anisotropic g-factor with |g_para| = 0.60 +/- 0.03 and |g_perp| < 0.12.
Recent advances in nanotechnology have enabled researchers to manipulate small collections of quantum mechanical objects with unprecedented accuracy. In semiconductor quantum dot qubits, this manipulation requires controlling the dot orbital energies, tunnel couplings, and the electron occupations. These properties all depend on the voltages placed on the metallic electrodes that define the device, whose positions are fixed once the device is fabricated. While there has been much success with small numbers of dots, as the number of dots grows, it will be increasingly useful to control these sy…
We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly-doped source and drain electrodes by a metallic nickel silicide with Fermi level close to the silicon mid-gap position. Such devices operate in a dual mode, either as classical field-effect or single-electron transistor. We implement a classical logic NOT gate at low temperature by tuning two interconnected transistors into opposite polarities. In the quantum regime, we dem…
We present quantum transport measurements of interacting parallel quantum dots formed in the strands of a carbon nanotube rope. In this molecular quantum dot system, transport is dominated by one quantum dot, while additional resonances from parallel side dots appear, which exhibit a weak gate coupling. This differential gating effect provides a tunability of the quantum dot system with only one gate electrode and provides control over the carbon nanotube strand that carries the current. By tuning the system to different states we use quantum transport as a spectroscopic tool to investigate th…
We have combined direct nanofabrication by local anodic oxidation with conventional electron-beam lithography to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. The combination of both nanolithography methods allows to fabricate robust in-plane gates and Cr/Au top gate electrodes on the same device for optimal controllability. This is illustrated by the tunability of the interdot coupling in our device. We describe our fabrication and alignment scheme in detail and demonstrate the tunability in low-temperature transport measurements.
We present a model of a qubit built of a three coherently coupled quantum dots with three spins in a triangular geometry. The qubit states are encoded in the doublet subspace and they are controlled by a gate voltage, which breaks the triangular symmetry of the system. We show how to prepare the qubit and to perform one qubit operations. A new type of the current blockade effect will be discussed. The blockade is related with an asymmetry of transfer rates from the electrodes to different doublet states and is used to read-out of the dynamics of the qubit state. Our research also presents anal…
We examine cross-correlations (CCs) in the tunneling currents through two parallel interacting quantum dots coupled to four independent ferromagnetic electrodes. We find that when either one of the two circuits is in the parallel configuration with sufficiently strong polarization strength, a new mechanism of dynamical spin blockade, i.e., a spin-dependent bunching of tunneling events, governs transport through the system together with the inter-dot Coulomb interaction, leading to a sign-reversal of the zero-frequency current CC in the dynamical channel blockade regime, and to enhancement of p…
We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the…
The precise simulation of the preparation, control, and readout of a single-hole spin is investigated via hierarchical equations of motion(HEOM) approach. By ionization of a resonantly excited electron-hole pair and tunneling the conduction level electrons into electrodes, a single-hole spin qubit is initialized. SU(2) control is achieved via the combination of Larmor procession of the hole spin in Voigt geometry magnetic field and rotation about the optical axis with a geometric phase induced by a picosecond laser pulse. Read-out of the qubit is implemented through photocurrent. We compared t…
We study experimentally the electron transport properties of gated quantum dots formed in InGaAs/InP and InAsP/InP quantum well structures grown by chemical-beam epitaxy. For the case of the InGaAs quantum well, quantum dots form directly underneath narrow gate electrodes due to potential fluctuations. We measure the Coulomb-blockade diamonds in the few-electron regime of a single quantum dot and observe photon-assisted tunneling peaks under microwave irradiation. A singlet-triplet transition at high magnetic field and Coulomb-blockade effects in the quantum Hall regime are also observed. For …
The effect of long distance coherent tunneling (LDCT) on the charge and heat currents in serially coupled triple quantum dots (TQDs) connected to electrodes is illustrated by using a combination of the extended Hurbbard model and Anderson model. The charge and heat currents are calculated with a closed-form Landauer expression for the transmission coefficient suitable for the Coulomb blockade regime. The physical parameters including bias-dependent quantum dot energy levels, electron Coulomb interactions, and electron hopping strengths are calculated in the framework of effective mass theory f…
We study thermoelectric transport through double quantum dots system with spin-dependent interdot coupling and ferromagnetic electrodes by means of the non-equilibrium Green function in the linear response regime. It is found that the thermoelectric coefficients are strongly dependent on the splitting of interdot coupling, the relative magnetic configurations and the spin polarization of leads. In particular, the thermoelectric efficiency can achieve considerable value in parallel configuration when the effective interdot coupling and tunnel coupling between QDs and the leads for spin-down ele…
A lateral quantum dot design for coherent electrical manipulation of a two-level spin-charge system is presented. Two micron-size permanent magnets integrated to high-frequency electrodes produce a static slanting magnetic field suitable for voltage controlled single qubit gate operations. Stray field deviation from the slanting form is taken into account in the Hamiltonian describing the two-level system, which involves hybridization of a single electron spin to the quantum dot's orbitals. Operation speed and gate fidelity are related to device parameters. Sub 100 ns $π$ pulse duration can be…
We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition(IDT…
We have theoretically studied the thermoelectric properties of serially coupled quantum dots (SCQD) embedded in an insulator matrix connected to metallic electrodes. In the framework of Keldysh Green's function technique, the Landauer formula of transmission factor is obtained by using the equation of motion method. Based on such analytical expressions of charge and heat currents, we calculate the electrical conductance, Seebeck coefficient, electron thermal conductance and figure of merit (ZT) of SCQD in the linear response regime. The effects of electron Coulomb interactions on the reduction…
We analyze the full counting statistics (FCS) of quantum dots in the Kondo regime contacted by normal and superconducting leads or an STM tip. To describe the Kondo resonance we use an effective model for the quantum dot in the Kondo regime in combination with the FCS for tunneling contacts calculated using the Hamiltonian approach. We show that the situation of weak coupling to the superconducting electrode in the case of superconductor gap being larger than the Kondo resonance width can be easily handled and verify the method by comparing our theoretical predictions to experimental data. Thi…
We propose an idea for probing spin states of two coupled quantum dots (CQD), by the dc Josephson current flowing through them. This theory requires weak coupling between CQD and electrodes, but allows arbitrary inter-dot tunnel coupling, intra- and inter- dot Coulomb interactions. We find that the Coulomb blockade peaks exhibit a non-monotonous dependence on the Zeeman splitting of CQD, which can be understood in terms of the Andreev bound states. More importantly, the supercurrent in the Coulomb blockade valleys may provide the information of the spin states of CQD: for CQD with total electr…
In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and connected to the leads via p-n junctions. Single electron and hole occupancy is realized and charge carriers $n = 1, 2,\dots 50$ can be filled successively into the quantum system with charging energies exceeding $10 \ \mathrm{meV}$. For the lowest quantum states, we can clearly observe valley and Zeeman splittings with a spin g-factor of $g_{s}\approx 2$. In…
We consider charge transport through a nanoscopic object, e.g. single molecules, short nanotubes, or quantum dots, that is weakly coupled to metallic electrodes. We account for several levels of the molecule/quantum dot with level-dependent coupling strengths, and allow for relaxation of the excited states. The current-voltage characteristics as well as the current noise are calculated within first-order perturbation expansion in the coupling strengths. For the case of asymmetric coupling to the leads we predict negative-differential-conductance accompanied with super-poissonian noise. Both ef…
The transport properties of serially coupled quantum dots (SCQDs) embedded in a matrix connected to metallic electrodes are theoretically studied in the linear and nonlinear regimes. The current rectification and negative differential conductance of SCQDs under the Pauli spin blockade condition are attributed to the combination of bias-direction dependent probability weight and off-resonant energy levels yielded by the applied bias across the junctions. We observe the spin-polarization current rectification under the Zeeman effect. The maximum spin-polarization current occurs in the forward bi…
Spin-polarized transport through quantum dots is analyzed theoretically in the cotunneling regime. It is shown that the zero-bias anomaly, found recently in the antiparallel configuration, can also exist in the case when one electrode is magnetic while the other one is nonmagnetic. Physical mechanism of the anomaly is also discussed. It is demonstrated that intrinsic spin relaxation in the dot has a significant influence on the zero-bias maximum in the differential conductance -- the anomaly becomes enhanced by weak spin-flip scattering in the dot and then disappears in the limit of fast spin …
System of two quantum dots attached to external electrodes is considered theoretically in orbital Kondo regime. In general, the double dot system is coupled via both Coulomb interaction and direct hoping. Moreover, the indirect hopping processes between the dots (through the leads) are also taken into account. To investigate system's electronic properties we apply slave-boson mean field (SBMF) technique. With help of the SBMF approach the local density of states for both dots and the transmission (as well as linear and differencial conductance) is calculated. We show that Dicke- and Fano-like …
We study resonant Andreev tunneling through a strongly interacting quantum dot connected to a normal and to a superconducting lead. We obtain a formula for the Andreev current and apply it to discuss the linear and non-linear transport in the nonperturbative regime, where the effects of the Kondo resonance on the two particle tunneling arise. In particular we notice an enhancement of the Kondo anomaly in the $I-V$ characteristics due to the superconducting electrode.
Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined quantum dots, leading to intensive studies on the physics and the applications of single-electron charge, single-electron spin and photon-electron quantum interface. However, the technology has not yet been realized for self-assembled quantum dots despite their fascinating quantum transport phenomena and outstanding optical functionalities. In this paper, we r…
We address XOR gate response in a mesoscopic ring threaded by a magnetic flux $ϕ$. The ring, composed of identical quantum dots, is symmetrically attached to two semi-infinite one-dimensional metallic electrodes and two gate voltages, viz, $V_a$ and $V_b$, are applied, respectively, in each arm of the ring which are treated as the two inputs of the XOR gate. The calculations are based on the tight-binding model and the Green's function method, which numerically compute the conductance-energy and current-voltage characteristics as functions of the ring-electrodes coupling strengths, magnetic fl…
In a recent paper [Physica E 39 (2007) 214, arXiv:0708.1842v1] Crisan, Grosu and Tifrea revisited the problem of the conductance through a double quantum dot molecule connected to electrodes in a T-shape configuration. The authors obtained an expression for the conductance that disagrees with previous results in the literature. We point out an error in their derivation of the conductance formula and show that it gives unphysical results even for non-interacting quantum dots.
