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arXiv 1608.02129cond-mat.mes-hall
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半导体/铁磁结构中存在Rashba效应时的自旋转移矩

Spin Transfer Torque in the Semiconductor/Ferromagnetic Structure in the Presence of Rashba Effect

Javad Vahedi, Sahar Ghasab Satoory

摘要:

磁结构中的自旋转移矩是由自旋电流的横向分量从磁介质流向铁磁介质时被界面吸收而产生的。本文考虑半导体区的Rashba效应,讨论了半导体/铁磁结构中的自旋转移矩,得到了(Ⅰ)-单电子和(Ⅱ)-电子分布两种模型下的自旋电流密度分量。结果表明,无论半导体费米面与铁磁费米面之间的上下自旋差增大,传输几率都减小。本文所用数值的计算结果表明,Rashba效应使半导体中的费米球与铁磁中的上下自旋费米球之间的差异增大。结果还表明,Rashba效应对自旋转移矩分量的贡献是额外的,这是不存在的Rashba相互作用。此外,Rashba项对自旋力矩传递的横向分量也有不同的影响。

英文摘要:

Spin transfer torque in magnetic structures occurs when the transverse component of the spin current that flows from the nonmagnetic medium to ferromagnetic medium are absorbed by the interface. In this paper, considering the Rashba effect on semiconductor region, we have discussed the spin transfer torque in semiconductor/ferromagnetic structure and obtained the components of spin-current density for two models: (I)-single electron and (II)- the distribution of electrons. We have shown that whatever the difference between Fermi surfaces in semiconductor and Fermi spheres for the up and down spins in ferromagnetic increase, the transmission probability decreases. The obtained results for the values used in this article illustrate that Rashba effect increases the difference between a Fermi sphere in semiconductors and Fermi sphere for the up and down spins in ferromagnetic. The results also show that the Rashba effect, brings an additional contribution to the components of spin transfer torque, which is not exist in the absence of the Rashba interaction. Moreover, the Rashba term has also different effects on the transverse components of the spin torque transfer.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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