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arXiv 1502.07101cond-mat.mes-hall
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(Ga,Mn)As纳米收缩中的双岛库仑阻塞

Double island Coulomb blockade in (Ga,Mn)As-nanoconstrictions

S. Geißler, S. Pfaller, M. Utz, D. Bougeard, A. Donarini, M. Grifoni, D. Weiss

摘要:

本文系统地研究了(Ga,Mn)As薄膜纳米制造窄收缩区的库仑阻塞效应。不同的低温运输制度已被观察到减少收缩尺寸:欧姆,单电子隧穿(SET)和完全绝缘制度。在SET中,复杂的稳定性图与嵌套库仑钻石和异常电导抑制附近的电荷简并点已被观察到。我们合理化这些意见在SET与双铁磁岛模型耦合到铁磁引线。它的输运特性进行了分析的修正正统理论的库仑阻塞,考虑到能量依赖的状态密度的金属岛。

英文摘要:

We report on a systematic study of the Coulomb blockade effects in nanofabricated narrow constrictions in thin (Ga,Mn)As films. Different low-temperature transport regimes have been observed for decreasing constriction sizes: the ohmic, the single electron tunnelling (SET) and a completely insulating regime. In the SET, complex stability diagrams with nested Coulomb diamonds and anomalous conductance suppression in the vicinity of charge degeneracy points have been observed. We rationalize these observations in the SET with a double ferromagnetic island model coupled to ferromagnetic leads. Its transport characteristics are analyzed in terms of a modified orthodox theory of Coulomb blockade which takes into account the energy dependence of the density of states in the metallic islands.

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