Van der Waals heterostructures display a rich variety of unique electronic properties. To identify novel transport mechanisms, nonlocal measurements have been widely used, wherein a voltage is measured at contacts placed far away from the expected classical flow of charge carriers. This approach was employed in search of dissipationless spin and valley transport, topological charge-neutral currents, hydrodynamic flows and helical edge modes. Monolayer, bilayer, and few-layer graphene, transition-metal dichalcogenides, and moire superlattices were found to display pronounced nonlocal effects. However, the origin of these effects is hotly debated. Graphene, in particular, exhibits giant nonlocality at charge neutrality, a prominent behavior that attracted competing explanations. Utilizing superconducting quantum interference device on a tip (SQUID-on-tip) for nanoscale thermal and scanning gate imaging, we demonstrate that the commonly-occurring charge accumulation at graphene edges leads to giant nonlocality, producing narrow conductive channels that support long-range currents. Unexpectedly, while the edge conductance has little impact on the current flow in zero magnetic field, it leads to field-induced decoupling between edge and bulk transport at moderate fields. The resulting giant nonlocality both at charge neutrality and away from it produces exotic flow patterns in which charges can flow against the global electric field. We have visualized surprisingly intricate patterns of nonlocal currents, which are sensitive to edge disorder. The observed one-dimensional edge transport, being generic and nontopological, is expected to support nonlocal transport in many electronic systems, offering insight into numerous controversies in the literature and linking them to long-range guided electronic states at system edges.
The recently predicted topological magnetoelectric effect and the response to an electric charge that mimics an induced mirror magnetic monopole are fundamental attributes of topological states of matter with broken time reversal symmetry. Using a SQUID-on-tip, acting simultaneously as a tunable scanning electric charge and as ultrasensitive nanoscale magnetometer, we induce and directly image the microscopic currents generating the magnetic monopole response in a graphene quantum Hall electron system. We find a rich and complex nonlinear behavior governed by coexistence of topological and non…
Disordered Fermi-Dirac distributions are used to model, within a straightforward and essentially phenomenological Boltzmann equation approach, the electron/hole transport across graphene puddles. We establish, with striking experimental support, a functional relationship between the graphene minimum conductivity, the mobility in the Boltzmann regime, and the steepness of the conductivity parabolic profile usually observed through gate-voltage scanning around the charge neutral point.
We calculate the density-density response function and electron self-energy for undoped bilayer graphene, within the Random Phase Approximation (RPA). We show that the quasiparticle decay rate scales linearly with the quasiparticle energy, and quasiparticle weight vanishes logarithmically in the low-energy limit, indicating non-Fermi liquid behavior. This is a consequence of the absence of a Fermi surface for neutral bilayer graphene and corresponding larger phase space available for scattering processes. Experimental consequences of our results as well as their differences from those of singl…
A non-local Hall bar geometry is used to detect neutral-current Hall effects in graphene on silicon dioxide. Disorder is tuned by the addition of Au or Ir adatoms in ultra-high vacuum. A reproducible neutral-current Hall effect is found in both as-fabricated and adatom-decorated graphene. The Hall angle exhibits a complex but reproducible dependence on gate voltage and disorder, and notably breaks electron-hole symmetry. An exponential dependence on length between Hall and inverse-Hall probes indicates a neutral current relaxation length of approximately 300 nm. The short relaxation length and…
The energy-dependence of the electronic scattering time is probed by Landau level spectroscopy in quasi neutral multilayer epitaxial graphene. From the Landau levels broadening we find that the scattering rate increases linearly with energy. This implies a surprising property of the Landau level spectrum in graphene - the number of the resolved Landau levels remains constant with the applied magnetic field. Insights are given about possible scattering mechanism and carrier mobilities in the graphene system investigated.
Recent experiments have demonstrated that neutral graphene sheets have an insulating ground state in the presence of an external magnetic field. We report on a $π$-band tight-binding-model Hartree-Fock calculation which examines the competition between distinct candidate insulating ground states. We conclude that for graphene sheets on substrates the ground state is most likely a field-induced spin-density-wave, and that a charge density wave state is possible for suspended samples. Neither of these density-wave states support gapless edge excitations.
We measured the conductance fluctuation of bi- and trilayer graphene devices prepared on mechanical exfoliated graphene by an all-dry, lithography-free process using an ultrathin quartz filament as a shadow mask. Reproducible fluctuations in conductance as a function of applied gate voltage or magnetic field were found. As the gate voltage was tuned so that the graphene device was pushed to the charge neutral point, the amplitude of the conductance fluctuation was found to be suppressed quickly from a value consistent with universal conductance fluctuation when the devices were still well with…
We present infrared transmission spectroscopy study of the inter-Landau-level excitations in quasi-neutral epitaxial graphene nanoribbon arrays. We observed a substantial deviation in energy of the $L_{0(-1)}$$\to$$L_{1(0)}$ transition from the characteristic square root magnetic-field dependence of two-dimensional graphene. This deviation arises from the formation of upper-hybrid mode between the Landau level transition and the plasmon resonance. In the quantum regime the hybrid mode exhibits a distinct dispersion relation, markedly different from that expected for conventional two-dimensiona…
We report on transport measurements of the insulating state that forms at the charge neutrality point of graphene in a magnetic field. Using both conventional two-terminal measurements, sensitive to bulk and edge conductance, and Corbino measurements, sensitive only to the bulk conductance, we observed a vanishing conductance with increasing magnetic fields. By examining the resistance changes of this insulating state with varying perpendicular and in-plane fields, we probe the spin-active components of the excitations in total fields of up to 45 Tesla. Our results indicate that ν=0 quantum Ha…
Conductivity of monolayer and two-layer graphene is considered with due regard for mutual drag of band electrons and holes. Search of contribution of the drag in conductivity shows that this effect can sufficiently influence on mobility of carriers, which belong to different groups and have different drift velocities. In two-layer system the mutual drag can even change the di-rection of partial current in separate layer.
We report experimental data and theoretical analysis of Coulomb drag between two closely positioned graphene monolayers in weak magnetic field. Close enough to the neutrality point, coexistence of electrons and holes in each layer leads to a dramatic increase of the drag resistivity. Away from charge neutrality, we observe non-zero Hall drag. The observed phenomena are explained by decoupling of electric and quasiparticle currents which are orthogonal at charge neutrality. The sign of magneto-drag depends on the energy relaxation rate and geometry of the sample.
We investigate the noise in single layer graphene devices from equilibrium to far from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (VSD). While the Hooge relation is not the case around the charge neutrality point, we found that it is recovered at very low VSD region. We propose that the depinning of the electron-hole puddles is induced at finite VSD, which may explain this anomalous noise behavior.
We report on transport properties in dual-gated hexagonal boron nitride (hBN)/bilayer-graphene (BLG) superlattices. Here, BLG is nontwisted, i.e., plain. This paper focuses on the charge neutrality point (CNP) for a plain BLG. Under a perpendicular magnetic field, transitions between two insulating phases at the CNP are detected by varying a displacement field with the study on the resistance-temperature characteristics and the magnetoresistance. This work opens avenues for exploring the global phase diagram of the hBN/BLG superlattices beyond the CNP.
Galvanomagnetic effects in graphene Magnetoresistivity and Hole-effect were theoretically investigated for neutral and gated graphene. It is shown that in neutral graphene Hall-effect is totally absent. In gated, exactly monopolar graphene effect of magnetoresistivity vanishes; here Hall-constant does not involve any relaxation characteristic in contrast to result obtained for popular method of relaxation time approximation.
We investigate the quantum Hall (QH) states near the charge neutral Dirac point of a high mobility graphene sample in high magnetic fields. We find that the QH states at filling factors $ν=\pm1$ depend only on the perpendicular component of the field with respect to the graphene plane, indicating them to be not spin-related. A non-linear magnetic field dependence of the activation energy gap at filling factor $ν=1$ suggests a many-body origin. We therefore propose that the $ν=0$ and $\pm1$ states arise from the lifting of the spin and sub-lattice degeneracy of the $n=0$ LL, respectively.
We study the role of non-locality of exchange in a neutral zigzag graphene nanoribbon within the $π$-orbital unrestricted Hartree-Fock approximation. Within this theory we find that the magnetic features are further stabilized for both the intra-edge and inter-edge exchange compared to mean field theories of zigzag ribbon based on local exchange (like the Hubbard model or the ab-initio Local Density Approximation). The inter-edge exchange produces an enhancement of the band-gap of the magnetic ground-state solutions. The effect of this enhanced exchange on the edge states can not be satisfacto…
We report the experimental observation of strongly enhanced tunneling between graphene bilayers through a WSe$_2$ barrier when the graphene bilayers are populated with carriers of opposite polarity and equal density. The enhanced tunneling increases sharply in strength with decreasing temperature, and the tunneling current exhibits a vertical onset as a function of interlayer voltage at a temperature of 1.5 K. The strongly enhanced tunneling at overall neutrality departs markedly from single-particle model calculations that otherwise match the measured tunneling current-voltage characteristics…
The fate of the low-temperature conductance at the charge-neutrality (Dirac) point in a single sheet of graphene is investigated down to 20 mK. As the temperature is lowered, the peak resistivity diverges with a power-law behavior and becomes as high as several Megohms per square at the lowest temperature, in contrast with the commonly observed saturation of the conductivity. As a perpendicular magnetic field is applied, our device remains insulating and directly transitions to the broken-valley-symmetry, nu=0 quantum Hall state, indicating that the insulating behavior we observe at zero magne…
It is known that fluctuations in the electrostatic potential allow for metallic conduction (nonzero conductivity in the limit of an infinite system) if the carriers form a single species of massless two-dimensional Dirac fermions. A nonzero uniform mass $\bar{M}$ opens up an excitation gap, localizing all states at the Dirac point of charge neutrality. Here we investigate numerically whether fluctuations $δM \gg \bar{M} \neq 0$ in the mass can have a similar effect as potential fluctuations, allowing for metallic conduction at the Dirac point. Our negative conclusion confirms earlier expectati…
Coulomb coupling between proximal layers in graphene heterostructures results in efficient energy transfer between the layers. We predict that, in the presence of correlated density inhomogeneities in the layers, vertical energy transfer has a strong impact on lateral charge transport. In particular, for Coulomb drag it dominates over the conventional momentum drag near zero doping. The dependence on doping and temperature, which is different for the two drag mechanisms, can be used to separate these mechanisms in experiment. We predict distinct features such as a peak at zero doping and a mul…
The magnetic field-dependent longitudinal and Hall components of the resistivity rho_xx(H) and rho_xy(H) are measured in graphene on silicon dioxide substrates at temperatures from 1.6 K to room temperature. At charge densities near the charge-neutrality point rho_xx(H) is strongly enhanced and rho_xy(H) is suppressed, indicating nearly equal electron and hole contributions to the transport current. The data are inconsistent with uniformly distributed electron and hole concentrations (two-fluid model) but in excellent agreement with the recent theoretical prediction for inhomogeneously distrib…
We develop a theory of fluctuation-driven phenomena in thermal transport in graphene double-layers. We work in the regime of electron hydrodynamics and focus on the double charge neutrality point. Although at the neutrality point charge transport is decoupled from the hydrodynamic flow, thermal fluctuations of electron density cause both drag and heat transfer between the layers. The thermal transport in the bilayer system is governed by these two phenomena. We express the drag friction coefficient and the interlayer thermal conductivity in terms of the interlayer distance and the intrinsic co…
We report on magneto-transport measurements up to 30 T performed on a bilayer graphene Hall bar, enclosed by two thin hexagonal boron nitride flakes. Our high mobility sample exhibits an insulating state at neutrality point which evolves into a metallic phase when a strong in-plane field is applied, as expected for a transition from a canted antiferromagnetic to a ferromagnetic spin ordered phase. For the first time we individuate a temperature-independent crossing in the four-terminal resistance as a function of the total magnetic field, corresponding to the critical point of the transition. …
Chiral gapless boundary modes are characteristic of quantum Hall (QH) states. For hole-conjugate fractional QH phases counterpropagating edge modes (upstream and downstream) are expected. In the presence of electrostatic interactions and disorder these modes may renormalize into charge and upstream neutral modes. Orthodox models of Laughlin phases anticipate only a downstream charge mode. Here we show that in the latter case, in the presence of a smooth confining potential, edge reconstruction leads to the emergence of pairs of counterpropagating modes, which, by way of mode renormalization, m…
Q. Ma et al.[1] recently reported a strong photocurrent associated with charge neutrality in graphene devices with non-uniform geometries, which they interpreted as an intrinsic photoresponse enhanced by the momentum non-relaxing nature of electron-electron collisions at charge neutrality. Here we argue that gradients in charge carrier density give rise to a photothermoelectric effect (PTE) which is strongly peaked around charge neutrality, i.e. at p-n junctions, and such p-n junctions naturally arise at the edges of graphene devices due to fringing capacitance. Using known parameters, the PTE…
Tuning the charge carrier density of two-dimensional (2D) materials by incorporating dopants into the crystal lattice is a challenging task. An attractive alternative is the surface transfer doping by adsorption of molecules on 2D crystals, which can lead to ordered molecular arrays. However, such systems, demonstrated in ultra-high vacuum conditions (UHV), are often unstable in ambient conditions. Here we show that air-stable doping of epitaxial graphene on SiC - achieved by spin-coating deposition of 2,3,5,6-tetrafluoro-tetracyano-quino-dimethane (F4TCNQ) incorporated in poly (methyl-methacr…
Ballistic transport occurs whenever electrons propagate without collisions deflecting their trajectory. It is normally observed in conductors with a negligible concentration of impurities, at low temperature, to avoid electron-phonon scattering. Here, we use suspended bilayer graphene devices to reveal a new regime, in which ballistic transport is not limited by scattering with phonons or impurities, but by electron-hole collisions. The phenomenon manifests itself in a negative four-terminal resistance that becomes visible when the density of holes (electrons) is suppressed by gate-shifting th…
A graphene sheet partially covered with a bulk superconductor serves as a normal conductor--superconductor (NS) junction, in which electron transport is mainly governed by Andreev reflection (AR). As excess carriers induced over the covered region penetrate into the uncovered region over a screening length, the charge neutrality point (CNP) in the uncovered region shifts only near the NS interface. We theoretically study the electron transport in a bilayer graphene junction taking account of such spatial variation of the CNP in the electron-doped case. When the Fermi level is close to the CNP …
We have investigated the disorder of epitaxial graphene close to the charge neutrality point (CNP) by various methods: i) at room temperature, by analyzing the dependence of the resistivity on the Hall coefficient ; ii) by fitting the temperature dependence of the Hall coefficient down to liquid helium temperature; iii) by fitting the magnetoresistances at low temperature. All methods converge to give a disorder amplitude of $(20 \pm 10)$ meV. Because of this relatively low disorder, close to the CNP, at low temperature, the sample resistivity does not exhibit the standard value $\simeq h/4e^2…
We use a combination of charge writing and scanning gate microscopy to map and modify the local charge neutrality point of graphene field-effect devices. We give a demonstration of the technique by writing remote charge in a thin dielectric layer over the graphene-metal interface and detecting the resulting shift in local charge neutrality point. We perform electrostatic simulations to characterize the gating effect of a realistic scanning probe tip on a graphene bilayer and find a good agreement with the experimental results.
Massless Dirac fermions in graphene at charge neutrality form a strongly interacting system in which both charged and neutral (energy) modes play an important role. These modes are essentially decoupled in the absence of a magnetic field, but become strongly coupled when a field is applied. We show that these ideas explain the recently observed giant magnetodrag, arising in classically weak fields when electron density is tuned near charge neutrality. We predict strong Hall drag in this regime, which is in stark departure from the weak coupling regime, where theory predicts the absence of Hall…
When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two- component model of coexisting electrons and holes around the charge neutrality point, we unambiguously show that both types of carriers are simultaneously present. For high magnetic fields up to 30 T the electron and hole concentrations at the charge neutrality point increase with the degeneracy of the zero-energy Landau level which implies a quantum Hall metal state at ν=0 made up by both electrons and holes.
Recent measurements revealed an anomalous Coulomb drag in graphene, hinting at new physics at charge neutrality. The anomalous drag is explained by a new mechanism based on energy transport, which involves interlayer energy transfer, coupled to charge flow via lateral heat currents and thermopower. The old and new drag mechanisms are governed by distinct physical effects, resulting in starkly different behavior, in particular for drag magnitude and sign near charge neutrality. The new mechanism explains the giant enhancement of drag near charge neutrality, as well as its sign and anomalous sen…
High mobility single and few-layer graphene sheets are in many ways attractive as nanoelectronic circuit hosts but lack energy gaps, which are essential to the operation of field-effect transistors. One of the methods used to create gaps in the spectrum of graphene systems is to form long period moire patterns by aligning the graphene and hexagonal boron nitride (h-BN) substrate lattices. Here, we use planar tunneling devices with thin h-BN barriers to obtain direct and accurate tunneling spectroscopy measurements of the energy gaps in single- and bi-layer graphene-h-BN superlattice structures…
Monolayer graphene at charge neutrality in a quantizing magnetic field is a quantum Hall ferromagnet. Due to the spin and valley (near) degeneracies, there is a plethora of possible ground states. Previous theoretical work, based on a stringent ultra short-range assumption on the symmetry-allowed interactions, predicts a phase diagram with distinct regions of spin-polarized, canted antiferromagnetic, inter-valley coherent, and charge density wave order. While early experiments suggested that the system was in the canted antiferromagnetic phase at a perpendicular field, recent scanning tunnelin…
Neutral graphene in strong magnetic fields is believed to be an (exchange stabilized) integer Hall state of completely filled up spin (say) and empty down spin bands of n = 0, two fold valley degenerate Landau levels. We suggest that correlation energy gain from a nearly SU(4) singlet (2 spin $\times$ 2 valley) composite fermi sea formation, at $ν\approx$ \hlf filling for each component, destabilizes ferromagnetic integer quantum Hall state. This radically different scenario is consistent with a dissipative gapless state seen in experiments in neutral graphene. Interesting paired Hall states a…
The conductance and thermoelectric power (TEP) of graphene is simultaneously measured using microfabricated heater and thermometer electrodes. The sign of the TEP changes across the charge neutrality point as the majority carrier density switches from electron to hole. The gate dependent conductance and TEP exhibit a quantitative agreement with the semiclassical Mott relation. In the quantum Hall regime at high magnetic field, quantized thermopower and Nernst signals are observed and are also in agreement with the generalized Mott relation, except for strong deviations near the charge neutrali…
The electronic transport of monolayer graphene devices is studied before and after \emph{in situ} deposition of a sub-monolayer coating of osmium adatoms. Unexpectedly, and unlike all other metallic adatoms studied to date, osmium adatoms shift the charge neutrality point to more positive gate voltages. This indicates that osmium adatoms act as electron acceptors and thus leave the graphene hole-doped. Analysis of transport data suggest that Os adatoms behave as charged impurity scatterers, albeit with a surprisingly low charge-doping efficiency. The charge neutrality point of graphene is foun…
A new mechanism that induces charge density variations in corrugated graphene is proposed. Here it is shown how the interplay between lattice deformations and exchange interactions can induce charge separation, i.e., puddles of electrons and holes, for realistic deformation values of the graphene sheet. The induced charge density lies in the range of $10^{11}-10^{12}$ cm$^{-2}$, which is compatible with recent measurements.
As a consequence of the approximate spin-valley symmetry in graphene, the ground state of electrons in graphene at charge neutrality is a particular SU(4) quantum-Hall ferromagnet to minimize their exchange energy. If only the Coulomb interaction is taken into account, this ferromagnet can appeal either to the spin degree of freedom or equivalently to the valley pseudo-spin degree of freedom. This freedom in choice is then limited by subleading energy scales that explicitly break the SU(4) symmetry, the simplest of which is given by the Zeeman effect that orients the spin in the direction of t…
We study carrier transport through graphene on SrTiO$_3$ substrates by considering relative contributions of Coulomb and resonant impurity scattering to graphene resistivity. We establish that charged impurity scattering must dominate graphene transport as the charge neutrality point is approached by lowering the carrier density, and in the higher density regime away from the neutrality point a dual model including both charged impurities and resonant defects gives an excellent description of graphene transport on SrTiO$_3$ substrates. We further establish that the non-universal high-density b…
We investigate the contribution of charge puddles to the non-vanishing conductivity minimum in disordered graphene flakes at the charge neutrality point. For that purpose, we study systems with a geometry that suppresses the transmission due to evanescent modes allowing to single out the effect of charge fluctuations in the transport properties. We use the recursive Green's functions technique to obtain local and total transmissions through systems that mimic vanishing density of states at the charge neutrality point in the presence of a local disordered local potential to model the charge pud…
We consider the nonlinear terahertz response of n-doped monolayer graphene at room temperature using a microscopic theory of carrier dynamics. Our tight-binding model treats the carrier-field interaction in the length gauge, includes phonon as well as short-range neutral-impurity scattering, and fully accounts for the intrinsic nonlinear response of graphene near the Dirac point. Treating each interaction microscopically allows us to separate contributions from current clipping, phonon creation, and elastic impurity scattering. Although neutral impurity scattering and phonon scattering are bot…
We have investigated shot noise and conductance of multi-terminal graphene nanoribbon devices at temperatures down to 50 mK. Away from the charge neutrality point, we find a Fano factor $F \approx 0.4$, nearly independent of the charge density. Our shot noise results are consistent with theoretical models for disordered graphene ribbons with a dimensionless scattering strength $K_0 \approx 10$ corresponding to rather strong disorder. Close to charge neutrality, an increase in $F$ up to $\sim 0.7$ is found, which indicates the presence of a dominant Coulomb gap possibly due to a single quantum …
We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type doping close to charge neutrality, electron transport resembles that in exfoliated graphene nanoribbons and is well described by tunnelling of single electrons through a network of Coulomb-blockaded islands. Under the influence of an external magnetic field, Coulomb blockade resonances flu…
Bilayer graphene in a magnetic field hosts a variety of ordered phases built from eight Landau levels close in energy to the neutrality point. These levels are characterized by orbital $n=0,1$, valley $ξ=+,-$ and spin $σ=\uparrow,\downarrow$; their relative energies depend strongly on the Coulomb interaction, magnetic field, and interlayer bias. We treat interactions at the Hartree-Fock level, including the effects of metallic gates, layer separation, spatial extent of the $p_z$ orbitals, all Slonczewski-Weiss-McClure tight-binding parameters, and pressure. We obtain the ground state as functi…
We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields $B>1$ T we observe the opening of a field induced gap at the charge neutrality point characterized by a diverging resistance. For higher fields the eight-fold degenerated lowest Landau level lifts completely. Both the sequence of this symmetry breaking and the strong transition of the gap-size point to a ferromagnetic nature of the insulating phase developing at the charge neutrality point.
A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a thermo-pressure cycle to allow short range impurities to be adsorbed directly on the ultra clean graphene surface. The adsorption process generated a strong temperature and electric field dependent behavior on the conductance of the graphene device. The conductance around the neutrality point is observed to be reduced from around $e^2/h$ at 30 K to $\sim0.01~…
The minimum of 4-terminal conductance occurring at its charge neutral point has proven to be a robust empirical feature of graphene, persisting with changes to temperature, applied magnetic field, substrate, and layer thickness, though the theoretical mechanisms involved in transport about this point -- vanishing density of states, conventional band gap opening, and broken symmetry quantum Hall mobility gaps -- vary widely depending on the regime. In this paper, we report on observations of a regime where the 4-terminal conductance minimum ceases to exist: transport in monolayer graphene conne…
The ground-state and the transport properties of graphene subject to the potential of in-plane charged impurities are studied. The screening of the impurity potential is shown to be nonlinear, producing a fractal structure of electron and hole puddles. Statistical properties of this density distribution as well as the charge compressibility of the system are calculated in the leading-log approximation. The conductivity depends logarithmically on $α$, the dimensionless strength of the Coulomb interaction. The theory is asymptotically exact when $α$ is small, which is the case for graphene on a …
Landau level broadening mechanisms in electrically neutral and quasineutral graphene were investigated through micro-magneto-Raman experiments in three different samples, namely, a natural single-layer graphene flake and a back-gated single-layer device, both deposited over Si/SiO2 substrates, and a multilayer epitaxial graphene employed as a reference sample. Interband Landau level transition widths were estimated through a quantitative analysis of the magnetophonon resonances associated with optically active Landau level transitions crossing the energy of the E_2g Raman-active phonon. Contra…
Graphene grown epitaxially on SiC, close to the charge neutrality point (CNP), in an orthogonal magnetic field shows an ambipolar behavior of the transverse resistance accompanied by a puzzling longitudinal magnetoresistance. When injecting a transverse current at one end of the Hall bar, a sizeable non local transverse magnetoresistance is measured at low temperature. While Zeeman spin effect seems not to be able to justify these phenomena, some dissipation involving edge states at the boundaries could explain the order of magnitude of the non local transverse magnetoresistance, but not the a…
Electromotive entrainment of charge and heat currents in graphene
Center for Computation and Theory of Soft Materials, Robert R. McCormick School of Engineering and Applied Science, Northwestern University（西北大学麦考密克工程与应用科学学院软物质计算与理论中心）；Department of Physics, University of Wisconsin-Madison（威斯康星大学麦迪逊分校物理系）；Department of Physics, University of Washington（华盛顿大学物理系）
Charge-neutral conducting systems represent a class of materials with unusual properties governed by electron-hole (e-h) interactions. Depending on the quasiparticles' statistics, band structure, and device geometry these semimetallic phases of matter can feature unconventional responses to external fields that often defy simple interpretations in terms of single-particle physics. Here we show that small-angle twisted bilayer graphene (SA-TBG) offers a highly-tunable system in which to explore interactions-limited electron conduction. By employing a dual-gated device architecture we tune our d…
