锇原子对石墨烯的空穴掺杂
Unexpected hole doping of graphene by osmium adatoms
摘要：
研究了在\emph{in situ}沉积锇吸附原子的亚单层涂层之前和之后单层石墨烯器件的电子输运。出乎意料的是，与迄今为止研究的所有其他金属吸附原子不同，锇吸附原子将电荷中性点转移到更正的栅极电压。这表明锇吸附原子作为电子受体，从而使石墨烯空穴掺杂。输运数据的分析表明，Os吸附原子的行为作为带电杂质散射体，尽管具有令人惊讶的低电荷掺杂效率。石墨烯的电荷中性点被发现随着栅极电压的变化而非单调地变化，因为样品被加热到室温，这表明锇在表面上扩散，但没有被完全去除。
英文摘要：
The electronic transport of monolayer graphene devices is studied before and after \emph{in situ} deposition of a sub-monolayer coating of osmium adatoms. Unexpectedly, and unlike all other metallic adatoms studied to date, osmium adatoms shift the charge neutrality point to more positive gate voltages. This indicates that osmium adatoms act as electron acceptors and thus leave the graphene hole-doped. Analysis of transport data suggest that Os adatoms behave as charged impurity scatterers, albeit with a surprisingly low charge-doping efficiency. The charge neutrality point of graphene is found to vary non-monotonically with gate voltage as the sample is warmed to room temperature, suggesting that osmium diffuses on the surface but is not completely removed.
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