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arXiv 2409.03058cond-mat.mes-hall
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石墨烯中狄拉克激发态淬灭

Dirac excited state quenching in graphene

Jacky C. Wan, Trevor B. Arp, Nathaniel M. Gabor

AI总结:

本文通过层间光电子测温法研究石墨烯中光激发狄拉克态的热载流子输运,发现其在50 K临界温度下电子温度淬灭且冷却速率超过10^14 K/s,揭示了强相互作用热狄拉克激发态的高效淬灭特征。

摘要:

热、致密的狄拉克费米子相——被预言类似于相对论性等离子体——可以通过对原始、电荷中性的石墨烯进行光激发而独特地实现。我们展示了一种对光激发狄拉克态进行灵敏温度探测的方法,称为层间光电子测温法,该方法测量封装在石墨烯-hBN-石墨烯异质结构中的高迁移率、中性石墨烯内热载流子的面外输运。在临界中间样品温度T = 50 K时,电子温度Te被淬灭,表现出在光激发后的第一个皮秒内超过10^14 K/s的本征冷却速率。通过在堆叠工程异质结构内施加面内电压,淬灭得到进一步增强。Te对样品温度和施加电压的极端敏感性揭示了异常高效的热载流子淬灭,我们认为这是强相互作用的热狄拉克激发态的一个基本特征。

英文摘要:

Hot, dense phases of Dirac fermions - predicted to resemble relativistic plasma - are uniquely accessible through photoexcitation of pristine, charge neutral graphene. We demonstrate a sensitive temperature probe of the photoexcited Dirac state, called interlayer optoelectronic thermometry, which measures out-of-plane transport of hot carriers in high-mobility, neutral graphene encapsulated within graphene-hBN-graphene heterostructures. At a critical intermediate sample temperature T = 50 K, the electronic temperature Te is quenched, exhibiting an intrinsic cooling rate that exceeds 10^14 Kelvin/s within the first picosecond after photoexcitation. Quenching is further enhanced by applying in-plane voltages within the stack-engineered heterostructure. Extreme sensitivity of Te to sample temperature and applied voltages reveals anomalously efficient hot-carrier quenching, which we identify as an essential feature of the strongly interacting hot Dirac excited state.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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