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arXiv 1111.0560cond-mat.mes-hall
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石墨烯器件上的读写电荷

Reading and writing charge on graphene devices

M. R. Connolly, E. D. Herbschleb, R. K. Puddy, M. Roy, D. Anderson, G. A. C. Jones, P. Maksym, C. G. Smith

摘要:

我们使用电荷写入和扫描栅显微镜的组合来映射和修改石墨烯场效应器件的局部电荷中性点。我们通过在石墨烯-金属界面上的薄电介质层中写入远程电荷并检测局部电荷中性点的偏移来演示该技术。我们进行静电模拟,以表征一个现实的扫描探针针尖上的石墨烯双层的门控效应,并找到一个很好的协议与实验结果。

英文摘要:

We use a combination of charge writing and scanning gate microscopy to map and modify the local charge neutrality point of graphene field-effect devices. We give a demonstration of the technique by writing remote charge in a thin dielectric layer over the graphene-metal interface and detecting the resulting shift in local charge neutrality point. We perform electrostatic simulations to characterize the gating effect of a realistic scanning probe tip on a graphene bilayer and find a good agreement with the experimental results.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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