基于力的单个单原子磁体读写
Force-Based Reading and Writing of Individual Single-Atom Magnets
AI总结：
本研究利用磁交换力显微镜实现了MgO薄膜上单个钬吸附原子自旋取向的读写，揭示了基于吸附位点对称性降低的写入机制，为低能耗原子级信息存储及原子尺度机械自旋电子学发展奠定基础。
摘要：
单原子比特的集成可实现最高数据密度的存储器。通过机械相互作用对这些比特进行信息读写，为运行低发热、高密度记录的磁器件提供了可能。为实现这一前瞻性目标，我们展示了利用磁交换力显微镜（magnetic exchange force microscopy）读取和写入MgO薄膜上单个钬吸附原子自旋取向的方法。钬吸附原子的自旋取向由吸附位点的强单轴各向异性稳定，可通过测量磁性针尖与原子间的交换力读出。将针尖进一步靠近钬吸附原子即可写入自旋取向。我们通过钬吸附原子吸附位点的对称性降低解释了这一写入机制。这些发现证明了以最低能量损耗实现信息存储的潜力，为原子尺度机械自旋电子学这一新领域铺平了道路。
英文摘要：
The integration of single-atom bits enables the realization of the highest data-density memory. Reading and writing information to these bits through mechanical interactions opens the possibility of operating the magnetic devices with low heat generation and high density recording. To achieve this visionary goal, we demonstrate the use of magnetic exchange force microscopy to read and write the spin orientation of individual holmium adatoms on MgO thin films. The spin orientation of the holmium adatom is stabilized by the strong uniaxial anisotropy of the adsorption site and can be read out by measuring the exchange forces between the magnetic tip and the atom. The spin orientation can be written by approaching the tip closer to the holmium adatom.We explain this writing mechanism by the symmetry reduction of the adsorption site of the Ho adatom. These findings demonstrate the potential for information storage with minimal energy loss and pave the way for a new field of atomic-scale mechano-spintronics.
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