arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2009.09167cond-mat.mes-hallcond-mat.mtrl-sci
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拓扑电路模拟中的二阶拓扑绝缘体和脆弱拓扑

Second-order topological insulator and fragile topology in topological circuitry simulation

Ce Shang, Xiaoning Zang, Wenlong Gao, Udo Schwingenschlögl, Aurélien Manchon

摘要:

二阶拓扑绝缘体(SOTI)是d维物质的拓扑相,在边缘的交叉处表现出(d-2)维局域模。我们表明,SOTI可以设计通过堆叠陈绝缘体与层间耦合连接相反的手征。为了刻画体角对应,我们建立了一个雅可比变换嵌套威尔逊圈方法和边缘理论,适用于更广泛的一类高阶拓扑系统。相应的拓扑不变量允许分数电荷角模的填充异常。该系统表现出一个脆弱的拓扑相,其特征在于在威尔逊圈光谱中没有Wannier间隙。此外,我们认为,所提出的方法可以推广到多层。我们的工作为探索和理解高阶拓扑现象提供了视角。

英文摘要:

Second-order topological insulators (SOTIs) are the topological phases of matter in d dimensions that manifest (d-2)-dimensional localized modes at the intersection of the edges. We show that SOTIs can be designed via stacked Chern insulators with opposite chiralities connected by interlayer coupling. To characterize the bulk-corner correspondence, we establish a Jacobian-transformed nested Wilson loop method and an edge theory that are applicable to a wider class of higher-order topological systems. The corresponding topological invariant admits a filling anomaly of the corner modes with fractional charges. The system manifests a fragile topological phase characterized by the absence of a Wannier gap in the Wilson loop spectrum. Furthermore, we argue that the proposed approach can be generalized to multilayers. Our work offers perspectives for exploring and understanding higher-order topological phenomena.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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