投影非晶拓扑绝缘体
Projected amorphous topological insulators
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中文总结 AI 辅助
本文提出投影非晶拓扑绝缘体（PATIs），通过有效哈密顿量构造实现全局拓扑不变量，并揭示强到脆弱PATI的量子相变，其特征由平均关联长度指数描述。
中文摘要 AI 辅助
我们引入了投影非晶拓扑绝缘体（PATIs），尽管它们仅包含母体晶体中随机选择的、原本不连接的一小部分（$x$）位点，但当通过积分掉原始晶格的剩余位点来构造其有效哈密顿量时，它们却具有量子化的全局拓扑不变量（强PATIs）。此外，在母体模型的拓扑区域内，存在一个临界$x$值，低于该值时，此类系统会形成一种脆弱的PATI，它仅在其一小部分位点上支持量子化的局部拓扑标记。强PATI和脆弱PATI都在边界附近容纳隙内模式。该系统在整个基于晶格模型的平凡参数区域内，对于任何$x$，都承载一个正常绝缘体，该绝缘体没有无间隙边界模式，其全局拓扑不变量和局部拓扑标记均为零。我们通过从基于方形晶格的时间反演对称性破缺绝缘体模型出发，证明了这些可能具有普适性的结果。然后，可通过$x$调节的强到脆弱PATI量子相变，其特征是平均关联长度指数$\nu \in (1.00,1.46)$。
英文摘要
We introduce projected amorphous topological insulators (PATIs) that despite containing only a fraction ($x$) of otherwise randomly selected {\it disconnected} sites of a parent crystal, feature a quantized global topological invariant ({\it strong} PATIs) when its effective Hamiltonian is constructed by integrating out the residual sites of the original lattice. Within the topological regime of the parent model, additionally, there exists a critical $x$ below which such systems foster a {\it fragile} PATI that only supports quantized local topological marker on a small fraction of sites therein. Both strong and fragile PATIs accommodate in-gap modes near the boundary. The system also hosts a normal insulator in the entire trivial parameter regime of the lattice-based model for any $x$, devoid of gapless boundary modes, for which both global topological invariant and local topological marker vanish. We demonstrate these {\it possibly} generic outcomes by starting with a parent square lattice-based model for time-reversal symmetry breaking insulators. Then the strong-to-fragile PATI quantum phase transition, tunable via $x$, is characterized by the {\it mean} correlation length exponent $ν\in (1.00,1.46)$.
发表机构
- Massachusetts Institute of Technology（麻省理工学院）
- Lehigh University（利哈伊大学）
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