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arXiv 2007.14066cond-mat.mtrl-sci
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第一性原理研究$β$ $_2$ O $_3$的结构、电子、弹性、功率和输运性质

Structural, electronic, elastic, power and transport properties of $β$-Ga$_2$O$_3$ from first-principles

Samuel Poncé, Feliciano Giustino

摘要:

我们从第一性原理出发研究了Ga $_2$ O $_3$的$β$同素异形体的结构、电子、振动、功率和输运性质。我们发现声子频率和弹性常数,再现正确的带序,与实验一致。利用玻尔兹曼输运方程计算了本征电子和空穴的漂移迁移率,得到室温下的本征电子和空穴漂移迁移率分别为258 cm $^2$ /Vs和1.2 cm $^2$ /Vs,以及100 K下的本征电子和空穴漂移迁移率分别为6300 cm $^2$ /Vs和13 cm $^2$ /Vs.通过光谱分解的散射贡献的逆迁移率,我们发现,多个纵向光学模式的B $_u$对称性负责的电子迁移率的$β$ - Ga $_2$ O $_3$,但许多声学模式也作出贡献,使得它必须包括所有的散射过程中的计算。使用冯希佩尔低能量标准,我们计算出的击穿场是5.8 MV/cm,在室温下产生的巴利加的品质因数为1250相对于硅,理想的高功率电子。这项工作提出了一个总体框架,预测性地研究新型高功率电子材料。

英文摘要:

We investigate the structural, electronic, vibrational, power and transport properties of the $β$ allotrope of Ga$_2$O$_3$ from first-principles. We find phonon frequencies and elastic constants that reproduce the correct band ordering, in agreement with experiment. We use the Boltzmann transport equation to compute the intrinsic electron and hole drift mobility and obtain a room temperature values of 258 cm$^2$/Vs and 1.2 cm$^2$/Vs, respectively as well as 6300 cm$^2$/Vs and 13 cm$^2$/Vs at 100 K. Through a spectral decomposition of the scattering contribution to the inverse mobility, we find that multiple longitudinal optical modes of B$_u$ symmetry are responsible for the electron mobility of $β$- Ga$_2$O$_3$ but that many acoustic modes also contributes, making it essential to include all scattering processes in the calculations. Using the von Hippel low energy criterion we computed the breakdown field to be 5.8 MV/cm at room temperature yielding a Baliga's figure of merit of 1250 with respect to silicon, ideal for high-power electronics. This work presents a general framework to predictively investigate novel high-power electronic materials.

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