arXiv 2006.042412020-06physics.ins-dethep-ex

利用超薄超快硅探测器（UFSD）提高时间分辨率的潜力

Potential for Improved Time Resolution Using Very Thin Ultra-Fast Silicon Detectors (UFSDs)

A. Seiden, H. Ren, Y. Jin, S. Christie, Z. Galloway, C. Gee, C. Labitan, M. Lockerby, F. Martinez-McKinney, S. M. Mazza, R. Padilla, H. F. -W. Sadrozinski, B. S… 展开作者

A. Seiden, H. Ren, Y. Jin, S. Christie, Z. Galloway, C. Gee, C. Labitan, M. Lockerby, F. Martinez-McKinney, S. M. Mazza, R. Padilla, H. F. -W. Sadrozinski, B. Schumm, M. Wilder, W. Wyatt, Y. Zhao, N. Cartiglia

备注：: 14 pages, 11 figures, 2 tables

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摘要：

超快硅探测器（UFSD）是一种n-in-p硅探测器，使用高电阻率p体和传感器结之间的薄高掺杂p++层实现中等增益（通常为5至25）。增益的存在允许对撞击最小电离带电粒子进行优异的时间测量。一个重要的设计考虑因素是传感器的厚度，这对可实现的时间分辨率有很大的影响。我们目前的测量结果LGAD的厚度在20微米和50微米之间。这些数据符合一个公式，该公式捕捉了电子抖动和朗道波动对时间分辨率的影响。这些数据说明了具有饱和电子漂移速度和大信噪比以实现良好时间分辨率的重要性。厚度为20微米的传感器提供每次测量10至15 ps的时间分辨率，这比迄今为止通常使用的50微米传感器的值有了显著的改进。

英文摘要：

Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity p-bulk and the junction of the sensor. The presence of gain allows excellent time measurement for impinging minimum ionizing charged particles. An important design consideration is the sensor thickness, which has a strong impact on the achievable time resolution. We present the result of measurements for LGADs of thickness between 20 micro-m and 50 micro-m. The data are fit to a formula that captures the impact of both electronic jitter and Landau fluctuations on the time resolution. The data illustrate the importance of having a saturated electron drift velocity and a large signal-to-noise in order to achieve good time resolution. Sensors of 20 micro-m thickness offer the potential of 10 to 15 ps time resolution per measurement, a significant improvement over the value for the 50 micro-m sensors that have been typically used to date.

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