用于单光子计数的远紫外绝对量子效率超过50%的硅探测器阵列
Silicon Detector Arrays with Absolute Quantum Efficiency over 50% in the Far Ultraviolet for Single Photon Counting Applications
摘要：
我们已经使用基于分子束外延（MBE）的delta掺杂技术在硅电子倍增电荷耦合器件（EMCCD）上证明了接近100%的内部量子效率（QE），用于单光子计数检测应用。此外，我们已经使用了精密的技术，通过采用原子层沉积（ALD），并证明了超过50%的外部QE在远紫外和近紫外的百万像素阵列的沉积增透膜（AR）涂层。我们已经证明，其他设备参数，如暗电流是不变的这些过程后。在本文中，我们报告这些结果，并简要讨论了所采用的技术和工艺。
英文摘要：
We have used Molecular Beam Epitaxy (MBE)-based delta doping technology to demonstrate near 100% internal quantum efficiency (QE) on silicon electron-multiplied Charge Coupled Devices (EMCCDs) for single photon counting detection applications. Furthermore, we have used precision techniques for depositing antireflection (AR) coatings by employing Atomic Layer Deposition (ALD) and demonstrated over 50% external QE in the far and near-ultraviolet in megapixel arrays. We have demonstrated that other device parameters such as dark current are unchanged after these processes. In this paper, we report on these results and briefly discuss the techniques and processes employed.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
