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arXiv 2003.01144cond-mat.mes-hall
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高阶拓扑能带结构

Higher-order topological band structures

Luka Trifunovic, Piet W. Brouwer

摘要:

材料的能带结构中的拓扑和对称性的相互作用可导致晶体边界上不同维度的拓扑状态的各种图案。这些“高阶”边界状态的保护来自拓扑学,并受到对称性的约束。我们回顾了拓扑晶体能带结构的体-边界对应关系,它将体能带结构的拓扑结构与边界态的模式联系起来。此外,还讨论了拓扑晶体能带结构的K理论分类的最新进展。

英文摘要:

The interplay of topology and symmetry in a material's band structure may result in various patterns of topological states of different dimensionality on the boundary of a crystal. The protection of these "higher-order" boundary states comes from topology, with constraints imposed by symmetry. We review the bulk-boundary correspondence of topological crystalline band structures, which relates the topology of the bulk band structure to the pattern of the boundary states. Furthermore, recent advances in the K-theoretic classification of topological crystalline band structures are discussed.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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