Based on the full Hamiltonian of bilayer graphene, phase transitions are realized by the change of the in-plane magnetic field and the electrical bias in bilayer graphene. We show that the engineering of Chern numbers of four bands is possible by an applied in-plane magnetic field and an electrical bias in bilayer graphene. Our results are promising for the exploration of new topological phenomena in 2D materials.
We present a field theory of Jain's composite fermion model as generalised to the bilayer quantum Hall systems. We define operators which create composite fermions and write the Hamiltonian exactly in terms of these operators. This is seen to be a complexified version of the familiar Chern Simons theory. In the mean-field approximation, the composite fermions feel a modified effective magnetic field exactly as happens in usual Chern Simons theories, and plateaus are predicted at the same values of filling factors as Lopez and Fradkin and Halperin . But unlike normal Chern Simons theories, we o…
Quantum anomalous Hall (QAH) multilayers provide a platform of topological materials with high Chern numbers. We investigate the localization routes of bilayer QAH systems with Chern number C = 2 under strong disorder, by numerical simulations on their quantum transport properties and the Chern-Simons axion coupling. Compared to the single layer counterpart with C = 2, the localization trajectories present much richer behaviors, for example, the existence of the stable intermediate state with C = 1 can be tuned by model parameters. This state was always unstable in the single layer case. Furth…
We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using double-gated bilayer graphene devices we have tuned the zero gap and charge neutrality points independently, which offers a versatile mechanism to investigate the low-energy band structure, charge localization and screening properties of bilayer graphene.
Magic-angle twisted bilayer graphene (MA-TBG) exhibits intriguing quantum phase transitions triggered by enhanced electron-electron interactions when its flat-bands are partially filled. However, the phases themselves and their connection to the putative non-trivial topology of the flat bands are largely unexplored. Here we report transport measurements revealing a succession of doping-induced Lifshitz transitions that are accompanied by van Hove singularities (VHS) which facilitate the emergence of correlation-induced gaps and topologically non-trivial sub-bands. In the presence of a magnetic…
The electronic structure and optical response of electrically gated bilayer graphene are studied by first-principles approaches. We have obtained the induced band gap that is in good agreement with experiment when the applied electric field is less than 1.5 V/nm. The infrared optical absorbance is calculated within the single-particle excitation picture and its fine structures are presented. In addition, the calculated infrared optical absorbance is found to be strongly depending on stacking styles of bilayer graphene and the polarization direction of the incident light, which provides efficie…
We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge neutrality point as a function of the electric field applied perpendicular to the graphene surface, we show that a band gap in the density of states opens, reaching an effective value of ~sim50 meV. This demonstrates the potential of bilayer graphene as FET channel material in a conventional CMOS environment.
While the electrical current manipulation of antiferromagnets (AFMs) has been demonstrated, the extent of the studied AFM materials has been limited with few systematic experiments and a poor understanding. We compare the electrical current switching of the exchange-bias field ($H_{ex}$) in AFM-Mn$_3A$N/ferromagnet-Co$_3$FeN bilayers. An applied pulse current can manipulate $H_{ex}$ with respect to the current density and FM layer magnetization, which shifts exponentially as a function of the current density. We found that the saturation current density and exponential decay constant $τ$ incre…
Twisted graphene bilayers develop highly localised states around AA-stacked regions for small twist angles. We show that interaction effects may induce either an antiferromagnetic (AF) and a ferromagnetic (F) polarization of said regions, depending on the electrical bias between layers. Remarkably, F-polarised AA regions under bias develop spiral magnetic ordering, with a relative $120^\circ$ misalignment between neighbouring regions due to a frustrated antiferromagnetic exchange. This remarkable spiral magnetism emerges naturally without the need of spin-orbit coupling, and competes with the …
We construct a continuum model for the Moiré superlattice of twisted bilayer MnBi$_2$Te$_4$, and study the band structure of the bilayer in both ferromagnetic (FM) and antiferromagnetic (AFM) phases. We find the system exhibits highly tunable Chern bands with Chern number up to $3$. We show that a twist angle of $1^\circ$ turns the highest valence band into a flat band with Chern number $\pm1$ that is isolated from all other bands in both FM and AFM phases. This result provides a promising platform for realizing time-reversal breaking correlated topological phases, such as fractional Chern ins…
The real space formalism of orbital magnetization (OM) is an average of the local OM over some appropriate region of the system. Previous studies prefer a bulk average (i.e., without including boundaries). Based on a bilayer model with an adjustable Chern number at half filling, we numerically investigate the effects from boundaries on the real space expressions of OM. The size convergence processes of its three constituent terms $M_{\mathrm{LC}}$, $M_{\mathrm{IC}}$, $M_{\mathrm{BC}}$ are analysed. The topological term $M_{\mathrm{BC}}$ makes a nonnegligible contribution from boundaries as a m…
We derive a general relation between the stacking vector ${\bf u}$ describing the relative shift of two layers of bilayer graphene and the Chern index. We find $C = ν- \text{sign}\left(|V_{AB}|-|V_{BA}|\right)$, where $ν$ is a valley index and $|V_{αβ}|$ the absolute value of stacking potentials that depend on ${\bf u}$ and that uniquely determine the interlayer interaction; AA stacking plays no role in the topological character. With this expression we show that while ideal and relaxed minimally twisted bilayer graphene appear so distinct as to be almost different materials, their Chern index…
We investigate the chemisorptions of oxygen molecules on bilayer graphene (BLG) and its electrically modified charge-doping effect using conductivity measurement of the field effect transistor channeled with BLG. We demonstrate that the change of the Fermi level by manipulating the gate electric field significantly affects not only the rate of molecular adsorption but also the carrier-scattering strength of adsorbed molecules. Exploration of the charge transfer kinetics reveals the electrochemical nature of the oxygen adsorption on BLG. [This document is the unedited Author's version of a Subm…
We predict twisted double bilayer graphene to be a versatile platform for the realization of fractional Chern insulators readily targeted by tuning the gate potential and the twist angle. Remarkably, these topologically ordered states of matter, including spin singlet Halperin states and spin polarized states in Chern number $\mathcal C=1$ and $\mathcal{C}= 2$ bands, occur at high temperatures and without the need for an external magnetic field.
Observation of a Reconstructed Chern Insulator in Twisted Bilayer MoTe2
Peking University（北京大学）；Hefei University of Technology（合肥工业大学）；Wuhan University（武汉大学）；Hong Kong University of Science and Technology（香港科技大学）；Southeast University（东南大学）；National Institute of Material Sciences（国立材料研究所）；Fudan University（复旦大学）
Adatom-decorated graphene offers a promising new path towards spintronics in the ultrathin limit. We combine experiment and theory to investigate the electronic properties of dilutely fluorinated bilayer graphene, where the fluorine adatoms covalently bond to the top graphene layer. We show that fluorine adatoms give rise to resonant impurity states near the charge neutrality point of the bilayer, leading to strong scattering of charge carriers and hopping conduction inside a field-induced band gap. Remarkably, the application of an electric field across the layers is shown to tune the resonan…
Valley is a useful degree of freedom for non-dissipative electronics since valley current that can flow even in an insulating material does not accompany electronic current. We use dual-gated bilayer graphene in the Hall bar geometry to electrically control broken inversion symmetry or Berry curvature as well as the carrier density to generate and detect the pure valley current. We find a large nonlocal resistance and a cubic scaling between the nonlocal resistance and the local resistivity in the insulating regime at zero-magnetic field and 70 K as evidence of the pure valley current. The ele…
We consider a double-layer system made of two parallel bilayer graphene sheets separated by a dielectric medium. We calculate the finite-temperature electrical conductivity of the first layer due to charged impurities located in two layers. We study the effects of temperature, interlayer distance, dielectric constants and impurity concentration, carrier concentration on the electrical conductivity. We show the importance of charged impurities located in layer II in determining electrical conductivity of the first layer for small interlayer distance. The results in this paper give us more under…
Vertical stacks of two-dimensional (2D) materials, separated by the van der Waals gap and held together by the van der Waals forces, are immensely promising for a plethora of nanotechnological applications. Charge control in these stacks may be modeled using either a simple electrostatics approach or a detailed atomistic one. In this paper, we compare these approaches for a gated 2D transition metal dichalcogenide bilayer and show that recently reported electrostatics-based models of this system give large errors in band energy compared to atomistic (Density Functional Theory) simulations. The…
We investigate the electronic band structure and the proximity exchange effect in bilayer graphene on a family of ferromagnetic multilayers Cr$_2$X$_2$Te$_6$, X=Ge, Si, and Sn, with first principles methods. In each case the intrinsic electric field of the heterostructure induces an orbital gap on the order of 10 meV in the graphene bilayer. The proximity exchange is strongly band dependent. For example, in the case of Cr$_2$Ge$_2$Te$_6$, the low-energy valence band of bilayer graphene has exchange splitting of 8 meV, while the low energy conduction band's splitting is 30 times less (0.3 meV).…
Periodic networks composed of capacitors and inductors have been demonstrated to possess topological properties with respect to incident electromagnetic waves. Here, we develop an analogy between the mathematical description of waves propagating in such networks and models of Majorana fermions hopping on a lattice. Using this analogy we propose simple electrical network architectures that realize Chern insulating phases for electromagnetic waves. Such Chern insulating networks have a bulk gap for a range of signal frequencies that is easily tunable and exhibit topologically protected chiral ed…
We consider magic-angle twisted bilayer graphene (TBG) at filling $ν=+3$, where experiments have observed a robust quantized anomalous Hall effect. This has been attributed to the formation of a valley- and spin-polarized Chern insulating ground state that spontaneously breaks time-reversal symmetry, and is stabilized by a hexagonal boron nitride (hBN) substrate. We identify three different types of domain wall, and study their properties and energetic selection mechanisms via theoretical arguments and Hartree-Fock calculations adapted to deal with inhomogeneous moiré systems. We comment on th…
The ground state of two-dimensional (2D) electron systems with equal low densities of electrons and holes in nearby layers is an exciton fluid. We show that a reservoir for excitons can be established by contacting the two layers separately and maintaining the chemical potential difference at a value less than the spatially indirect band gap. Equilibration between the exciton fluid and the contacts proceeds via a process involving virtual intermediate states in which an unpaired electron or hole occupies a free carrier state in one of the 2D layers. We derive an approximate relationship betwee…
We study the edge states of twisted bilayer graphene and their topological origin. We show that the twisted bilayer graphene has special edge states associated with the moiré pattern, and the emergence of these moiré edge states is linked with the sliding Chern number, which describes topological charge pumping caused by relative interlayer sliding. When one layer of the twisted bilayer is relatively slid with respect to the other layer, the edge states are transferred from a single band to another across the band gap, and the number of the edge states pumped in a sliding cycle is shown to be …
Recent experiments [L. Ju et al., Nature, 2015, 520, 650] confirm the existence of gapless states at domain walls created in gated bilayer graphene, when the sublattice stacking is changed from AB to BA. These states are significant because they are topologically protected, valley-polarized and give rise to conductance along the domain wall. Current theoretical models predict the appearance of such states only at domain walls, which preserve the sublattice order. Here we show that the appearance of the topologically protected states in stacking domain walls can be much more common in bilayer g…
Twisted bilayer graphene has recently attracted a lot of attention for its rich electronic properties and tunability. Here we show that for very small twist angles, $α\ll 1^\circ$, the application of a perpendicular electric field is mathematically equivalent to a new kind of artificial gauge field. This identification opens the door for the generation and detection of pseudo-Landau levels in graphene platforms within robust setups which do not depend on strain engineering and therefore can be realistically harvested for technological applications. Furthermore, this new artificial gauge field …
The valley degree of freedom of electrons in solids has been proposed as a new type of information carriers beyond the electronic charge and spin. Recent experimental demonstrations of the optical orientation of the valley polarization and generation of the valley current through the valley Hall effect in monolayer MoS2 have shown the potential of two-dimensional semiconductor transition metal dichalcogenides for valley based electronic and optoelectronic applications. The valley Hall conductivity in monolayer MoS2, a non-centrosymmetric crystal, however, cannot be easily tuned, presenting a c…
Studies of twisted moiré systems have been mainly focused on two-dimensional (2D) materials such as graphene with Dirac points and transition-metal-dichalcogenide so far. Here we propose a twisted bilayer of 2D systems which feature stable quadratic-band-touching points and find exotic physics different from previously studied twisted moiré systems. Specifically, we show that exactly flat bands can emerge at magic angles and, more interestingly, each flat band exhibits a high Chern number ($C=\pm 2$). We further consider the effect of Coulomb interactions in such magic-angle twisted systems an…
Compared with twisted bilayer graphene, twisted double bilayer graphene (TDBG) provides another important platform to realize the moiré flat bands. In this paper, we first calculate the valley Chern number phase diagram of TDBG in the parameter space spanned by the twist angle and the interlayer electric potential. To include the effects of interactions, we then phenomenologically introduce the spin-splitting and valley-splitting. We find that when the valley splitting is larger than the bandwidth of the first conduction band so that a gap is opened and the spin splitting is relatively weak, t…
We show that the flat bands in the chiral model of magic-angle twisted bilayer graphene remain exactly flat in the presence of a perpendicular magnetic field. This is shown by an exact mapping between the model and the lowest Landau level wavefunctions at an effective magnetic field, in which the external field is either augmented or reduced by one flux quantum per unit cell. When the external field reaches one flux quantum per unit cell, the model exhibits a topological phase transition. These findings allow us to analyze a Jain-series of Fractional Chern Insulators states in the exactly flat…
We propose a method for studying the strong interaction regimes in twisted bilayer graphene using hybrid Wannier functions, that are Wannier-like in one direction and Bloch-like in the other. We focus on the active bands as given by the continuum model proposed by Bistritzer and MacDonald, and discuss the properties of corresponding hybrid Wannier functions. We then employ the method for a study of the fillings of $\pm 3$ electrons per moiré cell using the Hartree-Fock method. We discuss at length different regimes under which a quantized anomalous Hall effect is seen in these two fillings.
Orientation-tunable correlated Chern insulating states in chiral twisted double bilayer graphene proximitized by WSe2
Nanjing University（南京大学）；Hefei National Laboratory（合肥国家实验室）；Yangtze Delta Region Academy of Beijing Institute of Technology (Jiaxing)（北京理工大学长三角研究院（嘉兴））；National Institute for Materials Science（国立材料研究所）；Beijing Institute of Technology（北京理工大学）；Nanjing University of Science and Technology（南京理工大学）；Jiangsu Physical Science Research Center（江苏物理科学研究中心）
Recent advances in the field of vertically stacked 2D materials have revealed a rich exciton landscape. In particular, it has been demonstrated that out-of-plane electrical fields can be used to tune the spectral position of spatially separated interlayer excitons. Other studies have shown that there is a strong hybridization of exciton states, resulting from the mixing of electronic states in both layers. However, the connection between the twist-angle dependent hybridization and field-induced energy shifts has remained in the dark. Here, we investigate on a microscopic footing the interplay …
The static dielectric function in AA-stacked bilayer graphene (BLG), subjected to an electric field applied perpendicular to layers, is calculated analytically within the random phase approximation (RPA). This result is used to calculate the screened Coulomb interaction and the electrical conductivity. The screened Coulomb interaction, which here can be tuned by the perpendicular electric field, shows a power-law decay as $1/(γ^{2}+V^2)$ at long-distance limit where $V$ and $γ$ are the electrical potential and the inter-layer hopping energy respectively, indicating that the Coulomb interaction…
Efficient control of magnetism with electric means is a central issue of current spintronics research, which opens an opportunity to design integrated spintronic devices. However, recent well-studied methods are mostly based on electric-current injection, and they are inevitably accompanied by considerable energy losses through Joule heating. Here we theoretically propose a way to exert spin torques into magnetic bilayer systems by application of electric voltages through taking advantage of the Rashba spin-orbit interaction. The torques resemble the well-known electric-current-induced torques…
The challenge of controlling magnetism using electric fields raises fundamental questions and addresses technological needs such as low-dissipation magnetic memory. The recently reported two-dimensional (2D) magnets provide a new system for studying this problem owing to their unique magnetic properties. For instance, bilayer chromium triiodide (CrI3) behaves as a layered antiferromagnet with a magnetic field-driven metamagnetic transition. Here, we demonstrate electrostatic gate control of magnetism in CrI3 bilayers, probed by magneto-optical Kerr effect (MOKE) microscopy. At fixed magnetic f…
Silicene have been proposed to host multiple topological phases depending on the environmental parameters such as gated voltage and proximity induced exchange field. Two typical topological phase are quantum spin Hall phase and quantum anomalous Hall phase. We found that in the presence of antiferromagnetic exchange field and (or) gated voltage, the bilayer silicene host a topological phase that the Chern numbers of the two spin are different in both sign and magnitude, .i.e the anomalous Hall effects of the two spins are imbalanced. The topological phase is generated by triple band inversion …
We perform an extensive exact diagonalization study of interaction driven insulators in spin- and valley-polarized moiré flat bands of twisted bilayer graphene aligned with its hexagonal boron nitride substrate. In addition to previously reported fractional Chern insulator phases, we provide compelling evidence for competing charge-density-wave phases at multiple fractional fillings of a realistic single-band model. A thorough analysis at different interlayer hopping parameters, motivated by experimental variability, and the role of kinetic energy at various Coulomb interaction strengths highl…
We investigate the influence of different spin-orbit couplings on topological phase transitions in the bilayer Kane-Mele model. We find that the competition between intrinsic spin-orbit coupling and Rashba spin-orbit coupling can lead to two dimensional topological metallic states with nontrivial topology. Such phases, although having a metallic bulk, still possess edge states with well-defined topological invariants. Specifically, we show that with preserved time reversal symmetry, the system can exhibit a $\mathbb{Z}_2$-metallic phase with spin helical edge states and a nontrivial $\mathbb{Z…
We study the edge spectrum of twisted sheets of single layer and bilayer graphene in cases where the continuum model predicts a valley Chern insulator -- an insulating state in which the occupied moiré mini-bands from each valley have a net Chern number, but both valleys together have no net Chern number, as required by time reversal symmetry. In a simple picture, such a state might be expected to have chiral valley polarized counter-propagating edge states. We present results from exact diagonalization of the tight-binding model of commensurate structures in the ribbon geometry. We find that …
We calculate the spin relaxation time of mobile electrons due to spin precession between random impurity scattering (D'yakonov-Perel' mechanism) in electrically gated bilayer graphene analytically and numerically. Due to the trigonal warping of the bandstructure, the spin relaxation time exhibits an interesting non-monotonic behavior as a function of both the Fermi energy and the interlayer bias potential. Our results are in good agreement with recent four-probe measurements of the spin relaxation time in bilayer graphene and indicate the possibility of an electrically-switched spin device.
Here, we propose quantum spin Hall-like phononic states in van der Waals bilayer systems with antiferromagnetic ordering. Antiferromagnetic ordering in bilayer systems with small interlayer interaction makes the total Chern number zero, where the Chern numbers for each layer are opposite to each other. In bilayer CrI3 where antiferromagnetic ordering has been experimentally demonstrated, we show that the quantum spin Hall-like states appear with spatially separated chiral edge modes.
We present atomistic calculations on structural and electronic properties of twisted double bilayer graphene (TDBG) consisting of two sets of rotationally misaligned Bernal-stacked bilayer graphene. Obtained equilibrium atomic structures exhibit in-plane strains and the modulation of the interlayer distances at the rotationally mismatched interface layers. We find that the electronic structure of TDBG can have an intrinsic band gap at the charge neutral point for a large range of the twist angle theta. Near theta = 1.25 degree, the intrinsic band gap disappears and TDBG hosts flat bands at the…
We consider bilayer graphene in the presence of spin orbit coupling, to assess its behavior as a topological insulator. The first Chern number $n$ for the energy bands of single and bilayer graphene is computed and compared. It is shown that for a given valley and spin, $n$ in a bilayer is doubled with respect to the monolayer. This implies that bilayer graphene will have twice as many edge states as single layer graphene, which we confirm with numerical calculations and analytically in the case of an armchair terminated surface. Bilayer graphene is a weak topological insulator, whose surface …
