While the electrical current manipulation of antiferromagnets (AFMs) has been demonstrated, the extent of the studied AFM materials has been limited with few systematic experiments and a poor understanding. We compare the electrical current switching of the exchange-bias field ($H_{ex}$) in AFM-Mn$_3A$N/ferromagnet-Co$_3$FeN bilayers. An applied pulse current can manipulate $H_{ex}$ with respect to the current density and FM layer magnetization, which shifts exponentially as a function of the current density. We found that the saturation current density and exponential decay constant $τ$ increase with the local moment of AFM Mn atoms. Our results highlight the effect of the AFM local moment to electrical current switching of $H_{ex}$, although it has a near-zero net magnetization, and may provide a facile way to explore the electrical current manipulation of AFM materials.
Mesoscopic transport measurements reveal a large effective phase coherence length in epitaxial GaMnAs ferromagnets, contrary to usual 3d-metal ferromagnets. Universal conductance fluctuations of single nanowires are compared for epilayers with a tailored anisotropy. At large magnetic fields, quantum interferences are due to structural disorder only, and an unusual behavior related to hole-induced ferromagnetism is evidenced, for both quantum interferences and decoherence. At small fields, phase coherence is shown to persist down to zero field, even in presence of magnons, and an additional spi…
We report the direct observation of switching of the Néel vector of antiferromagnetic (AFM) domains in response to electrical pulses in micron-scale Pt/$α$-Fe$_2$O$_3$ Hall bars using photoemission electron microscopy. Current pulses lead to reversible and repeatable switching, with the current direction determining the final state, consistent with Hall effect experiments that probe only the spatially averaged response. Current pulses also produce irreversible changes in domain structure, in and even outside the current path. In both cases only a fraction of the domains switch in response to p…
Microwaves couple to magnetic moments in both ferromagnets and antiferromagnets. Although the magnons in ferromagnets and antiferromagnets radically differ, they can become entangled via strong coupling to the same microwave mode in a cavity. The equilibrium configuration of the magnetic moments crucially governs the coupling between the different magnons because the antiferromagnetic and ferromagnetic magnons have the opposite spins when their dispersion relations cross. We derive analytical expressions for the coupling strengths and find that the coupling between antiferromagnets and ferroma…
Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the non-collinear antiferromagnet Mn$_{3}$Ir. Using epitaxial engineering on MgO (001) and Al$_{2}$O$_{3}$ (0001) single crystal substrates, we control the growth of cubic $γ$-Mn$_{3}$Ir in both (001) and (111) crystal orientations, and discuss the optimization of growth conditions to achieve high-quality crystal structures with low surface roughness. Exchange bias is studied in bilayers, with exc…
We develop a theory for spin transported by coherent Neel dynamics through an antiferromagnetic insulator coupled to a ferromagnetic insulator on one side and a current-carrying normal metal with strong spin-orbit coupling on the other. The ferromagnet is considered within the mono-domain limit and we assume its coupling to the local antiferromagnet Neel order at the ferromagnet|antiferromagnet interface through exchange coupling. Coupling between the charge current and the local Neel order at the other interface is described using spin Hall phenomenology. Spin transport through the antiferrom…
It is shown that the current-induced torques between a ferromagnetic layer and an antiferromagnetic layer with a compensated interface vanish when the ferromagnet is aligned with an axis of spin-rotation symmetry of the antiferromagnet. For properly chosen geometries this implies that the current induced torque can stabilize the out-of-plane (or hard axis) orientation of the ferromagnetic layer. This current-induced torque relies on phase coherent transport, and we calculate the robustness of this torque to phase breaking scattering. From this it is shown that the torque is not linearly depend…
FeSn is a topological semimetal (TSM) and kagome antiferromagnet (AFM) composed of alternating Fe3Sn kagome planes and honeycomb Sn planes. This unique structure gives rise to exotic features in the band structures such as the coexistence of Dirac cones and flatbands near the Fermi level, fully spin-polarized 2D surface Dirac fermions, and the ability to open a large gap in the Dirac cone by reorienting the Néel vector. In this work, we report the synthesis of high quality epitaxial (0001) FeSn films by magnetron sputtering. Using FeSn/Py heterostructures, we show a large exchange bias effect …
The ability to manipulate antiferromagnetic (AF) moments is a key requirement for the emerging field of antiferromagnetic spintronics. Electrical switching of bi-state AF moments has been demonstrated in metallic AFs, CuMnAs and Mn$_2$Au. Recently, current-induced "saw-tooth" shaped Hall resistance was reported in Pt/NiO bilayers, while its mechanism is under debate. Here, we report the first demonstration of convincing, non-decaying, step-like electrical switching of tri-state Néel order in Pt/$α$-Fe$_2$O$_3$ bilayers. Our experimental data, together with Monte-Carlo simulations, reveal the c…
We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$. X-ray magnetic linear dichroism photoemission electron microscopy measurements reveal that the AFM spins of the SmFeO$_3$(110) align in the plane of the film. Angularly dependent magnetoresistance measurements show that SmFeO$_3$/Ta bilayers exhibit a positive SMR, in contrast to the negative SMR expected in previously studied collinear AFMs. The SMR amplitude increases linearly wi…
We present a theoretical mapping to show that a ferromagnet with gain (loss) is equivalent to an antiferromagnet with an equal amount of loss (gain). Our finding indicates a novel first-order ferromagnet-antiferromagnet phase transition by tuning the gain-loss parameter. As an appealing application, we demonstrate the realization as well as the manipulation of the antiferromagnetic skyrmion, a stable topological quasiparticle not yet observed experimentally, in a chiral ferromagnetic thin film with gain. We also consider ferromagnetic bilayers with balanced gain and loss, and show that the ant…
We study the problem of controlling spin waves propagation through an antiferromagnet/ferromagnet interface via tuning material parameters. It is done by introducing the degree of sublattice noncompensation of antiferromagnet (DSNA), which is a physical characteristic of finite-thickness interfaces. The DSNA value can be varied by designing interfaces with a particular disorder or curvilinear geometry. We describe a spin-wave propagation through any designed antiferromagnet/ferromagnet interface considering a variable DSNA and appropriate boundary conditions. As a result, we calculate the phys…
Noncollinear antiferromagnets with a D0$_{19}$ (space group = 194, P6$_{3}$/mmc) hexagonal structure have garnered much attention for their potential applications in topological spintronics. Here, we report the deposition of continuous epitaxial thin films of such a material, Mn$_{3}$Sn, and characterize their crystal structure using a combination of x-ray diffraction and transmission electron microscopy. Growth of Mn$_{3}$Sn films with both (0001) c-axis orientation and (40$\bar{4}$3) texture is achieved. In the latter case, the thin films exhibit a small uncompensated Mn moment in the basal …
Non-collinear antiferromagnets, with either an L1$_{2}$ cubic crystal lattice (e.g. Mn$_{3}$Ir and Mn$_{3}$Pt) or a D0$_{19}$ hexagonal structure (e.g. Mn$_{3}$Sn and Mn$_{3}$Ge), exhibit a number of novel phenomena of interest to topological spintronics. Amongst the cubic systems, for example, tetragonally distorted Mn$_{3}$Pt exhibits an intrinsic anomalous Hall effect (AHE). However, Mn$_{3}$Pt only enters a non-collinear magnetic phase close to the stoichiometric composition and at suitably large thicknesses. Therefore, we turn our attention to Mn$_{3}$Ir, the material of choice for use in…
The spin-orbit torques (SOTs) generated from topological insulators (TIs) have gained increasing attention in recent years. These TIs, which are typically formed by epitaxially grown chalcogenides, possess extremely high SOT efficiencies and have great potential to be employed in the next-generation spintronics devices. However, epitaxy of these chalcogenides is required to ensure the existence of topologically-protected surface state (TSS), which limits the feasibility of using these materials in industry. In this work, we show that non-epitaxial Bi$_{x}$Te$_{1-x}$/ferromagnet heterostructure…
We consider electron transport in ferromagnets or antiferromagnets sandwiched between metals. When spins in the magnetic materials precess, they emit currents into the surrounding conductors. Generally, adiabatic pumping in mesoscopic systems also enhances current fluctuations. We generalize the description of current fluctuations driven by spin dynamics in three ways using scattering theory. First, our theory describes a general junction with any given electron scattering properties. Second, we consider antiferromagnets as well as ferromagnets. Third, we treat multiterminal devices. Using sho…
Symmetry Enhanced Unconventional Spin Current Anisotropy in a Collinear Antiferromagnet
University of Gothenburg（哥德堡大学）；Research Institute of Electrical Communication, Tohoku University（东北大学电气通信研究所）；Indian Institute of Technology Delhi（德里印度理工学院）
