FeSn is a topological semimetal (TSM) and kagome antiferromagnet (AFM) composed of alternating Fe3Sn kagome planes and honeycomb Sn planes. This unique structure gives rise to exotic features in the band structures such as the coexistence of Dirac cones and flatbands near the Fermi level, fully spin-polarized 2D surface Dirac fermions, and the ability to open a large gap in the Dirac cone by reorienting the Néel vector. In this work, we report the synthesis of high quality epitaxial (0001) FeSn films by magnetron sputtering. Using FeSn/Py heterostructures, we show a large exchange bias effect that reaches an exchange field of 220 Oe at 5 K, providing unambiguous evidence of antiferromagnetism and strong interlayer exchange coupling in our films. Field cycling studies show steep initial training effects, highlighting the complex magnetic interactions and anisotropy. Importantly, our work provides a simple, alternative means to fabricate FeSn films and heterostructures, making it easier to explore the topological physics of AFM TSMs and develop FeSn-based spintronics.
FeSn is a room-temperature antiferromagnet expected to host Dirac fermions in its electronic structure. The interplay of magnetic degree of freedom and the Dirac fermions makes FeSn an attractive platform for spintronics and electronic devices. While stabilization of thin film FeSn is needed for the development of such devices, there exist no previous report of epitaxial growth of single crystalline FeSn. Here we report the realization of epitaxial thin films of FeSn (001) grown by molecular beam epitaxy on single crystal SrTiO$_{3}$ (111) substrates. By combining X-ray diffraction, electrical…
Quantum materials, particularly Dirac materials with linearly dispersing bands, can be effectively tuned by strain-induced lattice distortions leading to a pseudo-magnetic field that strongly modulates their electronic properties. Here, we grow kagome magnet FeSn films, consisting of alternatingly stacked Sn$_2$ honeycomb (stanene) and Fe$_3$Sn kagome layers, on SrTiO$_3$(111) substrates by molecular beam epitaxy. Using scanning tunneling microscopy/spectroscopy, we show that the Sn honeycomb layer can be periodically deformed by epitaxial strain for film thickness below 10 nm, resulting in di…
Epitaxial thin films of CuMnAs have recently attracted attention due to their potential to host relativistic antiferromagnetic spintronics and exotic topological physics. Here we report on the structural and electronic properties of a tetragonal CuMnAs thin film studied using scanning tunneling microscopy (STM) and density functional theory (DFT). STM reveals a surface terminated by As atoms, with the expected semi-metallic behavior. An unexpected zigzag step edge surface reconstruction is observed with emerging electronic states below the Fermi energy. DFT calculations indicate that the step …
We investigated the electronic properties of epitaxially stabilized perovskite SrIrO3 and demonstrated the effective strain-control on its electronic structure. Comprehensive transport measurements showed that the strong spin-orbit coupling renders a novel semimetallic phase for the J_eff=1/2 electrons rather than an ordinary correlated metal, elucidating the nontrivial mechanism underlying the dimensionality-controlled metal-insulator transition in iridates. The electron-hole symmetry of this correlated semimetal was found to exhibit drastic variation when subject to bi-axial strain. Under co…
Weyl Semimetals (WSMs), a recently discovered topological state of matter, exhibit an electronic structure governed by linear band dispersions and degeneracy (Weyl) points leading to rich physical phenomena, which are yet to be exploited in thin film devices. While WSMs were established in the monopnictide compound family several years ago, the growth of thin films has remained a challenge. Here, we report the growth of epitaxial thin films of NbP and TaP by means of molecular beam epitaxy. Single crystalline films are grown on MgO (001) substrates using thin Nb (Ta) buffer layers, and are fou…
We study the influence of epitaxial strain on the electronic properties of InAs/GaSb composite quantum wells (CQWs), host structures for quantum spin Hall insulators, by transport measurements and eight-band $\mathbf{k\cdot p}$ calculations. Using different substrates and buffer layer structures for crystal growth, we prepare two types of samples with vastly different strain conditions. CQWs with a nearly strain-free GaSb layer exhibit a resistance peak at the charge neutrality point that reflects the opening of a topological gap in the band-inverted regime. In contrast, for CQWs with 0.50\% b…
Epitaxial thin films of 1T-HfTe2 semimetal are grown by MBE on AlN(0001) substrates. The measured in-plane lattice parameter indicates an unstrained film which is also azimuthally aligned with the AlN substrate, albeit with an in-plane mosaic spread, as it would be expected for van der Waals epitaxy. Angle resolved photoemission spectroscopy combined with first principles electronic band structure calculations show steep linearly dispersing conduction and valence bands which cross near the Brillouin zone center, providing evidence that HfTe2 /AlN is an epitaxial topological Dirac semimetal.
Synthesis of crystallographically well-defined thin films of topological materials is important for unraveling their mesoscale quantum properties and for device applications. Mn$_3$Ge, an antiferromagnetic Weyl semimetal with a chiral magnetic structure on a Kagome lattice, is expected to have enhanced Berry curvature around Weyl nodes near the Fermi energy, leading to large anomalous Hall / Nernst effects and a large spin-Hall effect. Using magnetron sputtering, we have grown epitaxial thin films of hexagonal D0$_{19}$ Mn$_3$Ge that are flat and continuous. Large anomalous Nernst and inverse …
Epitaxial thin films of (Sn$_{x}$Pb$_{1-x}$)$_{1-y}$In$_{y}$Te were successfully grown by molecular-beam-epitaxy (MBE) in a broad range of compositions (0 $\leq$ x $\leq$ 1, 0 $\leq$ y $\leq$ 0.23). We investigated electronic phases of the films by the measurements of electrical transport and optical second harmonic generation. In this system, one can control the inversion of band gap, the electric polarization that breaks the inversion symmetry, and the Fermi level position by tuning the Pb/Sn ratio and In composition. A plethora of topological electronic phases are expected to emerge, such a…
Topology and strong electron correlations are crucial ingredients in emerging quantum materials, yet their intersection in experimental systems has been relatively limited to date. Strongly correlated Weyl semimetals, particularly when magnetism is incorporated, offer a unique and fertile platform to explore emergent phenomena in novel topological matter and topological spintronics. The antiferromagnetic Weyl semimetal Mn3Sn exhibits many exotic physical properties such as a large spontaneous Hall effect and has recently attracted intense interest. In this work, we report synthesis of epitaxia…
Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd3+ ion in GdSb has a high spin S=7/2 and no orbital angular momentum, serving as a model system for studying the effects of antiferromagnetic order and strong exchange coupling on the resulting Fermi surface and magnetotransport pr…
A two-dimensional (2D) Weyl semimetal featuring a spin-polarized linear band dispersion and a nodal Fermi surface is a new topological phase of matter. It is a solid-state realization of Weyl fermions in an intrinsic 2D system. The nontrivial topology of 2D Weyl cones guarantees the existence of a new form of topologically protected boundary states, Fermi string edge states. In this work, we report the realization of a 2D Weyl semimetal in monolayer-thick epitaxial bismuthene grown on SnS(Se) substrate. The intrinsic band gap of bismuthene is eliminated by the space-inversion-symmetry-breaking…
The magnetotransport properties of epitaxial films of Cd3As2, a paradigm three-dimensional Dirac semimetal, are investigated. We show that an energy gap opens in the bulk electronic states of sufficiently thin films and, at low temperatures, carriers residing in surface states dominate the electrical transport. The carriers in these states are sufficiently mobile to give rise to a quantized Hall effect. The sharp quantization demonstrates surface transport that is virtually free of parasitic bulk conduction and paves the way for novel quantum transport studies in this class of topological mate…
The combination of magneto-transport and topological properties has brought great attention to rare-earth mono-pnictides semimetals. For some of them, like LaSb, it is unclear whether they show non-trivial topology or not based on density functional theory calculations and angular resolved photoemission spectroscopy measurements. Here, we use hybrid density functional theory to demonstrate that LaSb is in fact a trivial topological semimetal, in agreement with experiments, but on the verge of a transition to a topological phase. We show that under compressive epitaxial strain, the La $d$ band …
Three-dimensional (3D) topological Dirac semimetals (TDSs) are rare but important as a versatile platform for exploring exotic electronic properties and topological phase transitions. A quintessential feature of TDSs is 3D Dirac fermions associated with bulk electronic states near the Fermi level. Using angle-resolved photoemission spectroscopy (ARPES), we have observed such bulk Dirac cones in epitaxially-grown α-Sn films on InSb(111), the first such TDS system realized in an elemental form. First-principles calculations confirm that epitaxial strain is key to the formation of the TDS phase. …
Recently discovered Dirac and Weyl semimetals display unusual magnetoresistance phenomena, including a large, non-saturating, linear transverse magnetoresistance and a negative longitudinal magnetoresistance. The latter is often considered as evidence of fermions having a defined chirality. Classical mechanisms, due to disorder or non-uniform current injection, can however, also produce negative longitudinal magnetoresistance. Here, we report on magnetotransport measurements performed on epitaxial thin films of Cd3As2, a three-dimensional Dirac semimetal. Quasi-linear positive transverse magne…
The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2…
In topological semimetals, nodes appear at symmetry points in the Brillouin zone as a result of band inversion, and yield quasi-relativistic massless fermions at low energies. Cd3As2 is a three-dimensional topological semimetal that hosts two Dirac cones responsible for a variety of quantum phenomena. In this work, we demonstrate the strain tuning of the Dirac nodes of Cd3As2 through a combination of magnetooptical infrared spectroscopy and high-resolution X-ray diffraction studies performed on epitaxial films. In these thin films, we observe a giant enhancement of the node separation in momen…
In this paper we report a detailed analysis of the temperature-dependent optical properties of epitaxially grown cadmium arsenide (Cd$_3$As$_2$), a newly discovered three-dimensional Dirac semimetal. Dynamic Fermi level tuning -- instigated from Pauli-blocking in the linear Dirac cone -- and varying Drude response, generate large variations in the mid and far-infrared optical properties. We demonstrate thermo-optic shifts larger than those of traditional III-V semiconductors, which we attribute to the obtained large thermal expansion coefficient as revealed by first-principles calculations. El…
The linear band crossings of 3D Dirac and Weyl semimetals are characterized by a charge chirality, the parallel or anti-parallel locking of electron spin to its momentum. Such materials are believed to exhibit a ${\bf E} \cdot {\bf B}$ chiral magnetic effect that is associated with the near conservation of chiral charge. Here, we use magneto-terahertz spectroscopy to study epitaxial Cd$_3$As$_2$ films and extract their conductivities $σ(ω)$ as a function of ${\bf E} \cdot {\bf B}$. As field is applied, we observe a remarkably sharp Drude response that rises out of the broader background. Its a…
Magnetic semimetals have increasingly emerged as lucrative platforms hosting spin-based topological phenomena in real and momentum spaces. Of particular interest is the emergence of Berry curvature, whose geometric origin, accessibility from Hall transport experiments, and material tunability, bodes well for new physics and practical devices. Cr1+dTe2, a self-intercalated magnetic transition metal dichalcogenide, TMD, exhibits attractive natural attributes relevant to such applications, including topological magnetism, tunable electron filling, magnetic frustration etc. While recent studies ha…
Obtaining high-quality thin films of 5d transition metal oxides is essential to explore the exotic semimetallic and topological phases predicted to arise from the combination of strong electron correlations and spin-orbit coupling. Here, we show that the transport properties of SrIrO3 thin films, grown by pulsed laser deposition, can be optimized by considering the effect of laser-induced modification of the SrIrO3 target surface. We further demonstrate that bare SrIrO3 thin films are subject to degradation in air and are highly sensitive to lithographic processing. A crystalline SrTiO3 cap la…
The electrical conductance of molecular beam epitaxial Bi on BaF2(111) was measured as a function of both film thickness (4-540 nm) and temperature (5-300 K). Unlike bulk Bi as a prototype semimetal, the Bi thin films up to 90 nm are found to be insulating in the interiors but metallic on the surfaces. This result has not only resolved unambiguously the long controversy about the existence of semimetal-semiconductor transition in Bi thin film but also provided a straightforward interpretation for the long-puzzled temperature dependence of the resistivity of Bi thin films, which in turn might s…
Gate-tunable electronic properties of epitaxial Bi (111) films using a printable hexagonal boron nitride ionogel
Argonne National Laboratory（阿贡国家实验室）；Northwestern University（西北大学）；Case Western Reserve University（凯斯西储大学）；University of California, Riverside（加州大学河滨分校）
Mn$_3$Sn is a non-collinear antiferromagnetic quantum material that exhibits a magnetic Weyl semimetallic state and has great potential for efficient memory devices. High-quality epitaxial $c$-plane Mn$_3$Sn thin films have been grown on a sapphire substrate using a Ru seed layer. Using spin pumping induced inverse spin Hall effect measurements on $c$-plane epitaxial Mn$_3$Sn/Ni$_{80}$Fe$_{20}$, we measure spin-diffusion length ($λ_{\rm Mn_3Sn}$), and spin Hall conductivity ($σ_{\rm{SH}}$) of Mn$_3$Sn thin films: $λ_{\rm Mn_3Sn}=0.42\pm 0.04$ nm and $σ_{\rm{SH}}=-702~\hbar/ e~Ω^{-1}$cm$^{-1}$.…
Magnetic Weyl fermions, which occur in magnets, have novel transport phenomena related to pairs of Weyl nodes, and they are, of both, scientific and technological interest, with the potential for use in high-performance electronics, spintronics and quantum computing. Although magnetic Weyl fermions have been predicted to exist in various oxides, evidence for their existence in oxide materials remains elusive. SrRuO3, a 4d ferromagnetic metal often used as an epitaxial conducting layer in oxide heterostructures, provides a promising opportunity to seek for the existence of magnetic Weyl fermion…
Two-dimensional (2D) palladium ditelluride (PdTe2) and platinum ditelluride (PtTe2) are two Dirac semimetals which demonstrate fascinating quantum properties such as superconductivity, magnetism and topological order, illustrating promising applications in future nanoelectronics and optoelectronics. However, the synthesis of their monolayers is dramatically hindered by strong interlayer coupling and orbital hybridization. In this study, an efficient synthesis method for monolayer PdTe2 and PtTe2 is demonstrated. Taking advantages of the surface reaction, epitaxial growth of large-area and high…
This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited epitaxial Co2MnGa thin films with highly B2-ordered structure on MgO(001) substrates. The SOT was characterized by harmonic Hall measurements in a Co2MnGa/Ti/CoFeB heterostructure and a relatively large spin Hall efficiency of -7.8% was obtained.The SOT-induced magnetization switching of the perpendicularly magnetized CoFeB layer was further demonstrated using the structure. The symmetry of second harmonic signals, t…
Electron-boson interaction is fundamental to a thorough understanding of various exotic properties emerging in many-body physics. In photoemission spectroscopy, photoelectron emission due to photon absorption would trigger diverse collective excitations in solids, including the emergence of phonons, magnons, electron-hole pairs, and plasmons, which naturally provides a reliable pathway to study electron-boson couplings. While fingerprints of electron-phonon/-magnon interactions in this state-of-the-art technique have been well investigated, much less is known about electron-plasmon coupling, a…
Dirac semimetal strontium iridate thin films with strong spin-orbit interaction for magnetic heterostructures
Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences（俄罗斯科学院科捷利尼科夫无线电工程与电子研究所）；National Research University "Higher School of Economics", Faculty of Physics（国立研究大学高等经济大学物理系）；Moscow Institute of Physics and Technology (National Research University)（莫斯科物理技术学院（国立研究大学））
Non-collinear antiferromagnet Weyl semimetal $Mn_3Sn$ have attracted great research interest recently. Although large anomalous Hall effect, anomalous Nernst effect and magneto-optical effect have been observed in $Mn_3Sn$, most studies are based on single crystals. So far, it is still challenging to grow high quality epitaxial $Mn_3Sn$ thin films with transport and optical properties comparable to their single crystal counterparts. Here, we report the structure, magneto-optical and transport properties of epitaxial $Mn_3Sn$ thin films fabricated by pulsed laser deposition (PLD). Highly orient…
Dirac line node (DLN) semimetals are a class of topological semimetals that feature band-crossing lines in momentum space. We study the type-I and type-II classification of DLN semimetals by developing a criterion that determines the type using band velocities. Using first-principles calculations, we also predict that Na3N under an epitaxial tensile strain realizes a type-II DLN semimetal with vanishing spin-orbit coupling (SOC), characterized by the Berry phase that is Z2-quantized in the presence of inversion and time-reversal symmetries. The surface energy spectrum is calculated to demonstr…
(001)-oriented thin films of the three-dimensional Dirac semimetal cadmium arsenide can realize a quantum spin Hall insulator and other kinds of topological physics, all within the flexible architecture of epitaxial heterostructures. Here, we report a method for growing (001) cadmium arsenide films using molecular beam epitaxy. The introduction of a thin indium arsenide wetting layer improves surface morphology and structural characteristics, as measured by x-ray diffraction and reflectivity, atomic force microscopy, and scanning transmission electron microscopy. The electron mobility of 50-nm…
High-mobility two-dimensional carriers originating from surface Fermi arcs in magnetic Weyl semimetals are highly desired for accessing exotic quantum transport phenomena and for topological electronics applications. Here, we demonstrate high-mobility two-dimensional carriers that show quantum oscillations in magnetic Weyl semimetal SrRuO3 epitaxial films by systematic angle-dependent, high-magnetic field magnetotransport experiments. The exceptionally high-quality SrRuO3 films were grown by state-of-the-art oxide thin film growth technologies driven by machine learning algorithm. The quantum …
Magnetic doping of topological quantum materials provides an attractive route for studying the effects of time-reversal symmetry breaking. Thus motivated, we explore the introduction of the transition metal Mn into thin films of the Dirac semimetal Cd3As2 during growth by molecular beam epitaxy. Scanning transmission electron microscopy measurements show the formation of a Mn-rich phase at the top surface of Mn-doped Cd3As2 thin films grown using both uniform doping and delta doping. This suggests that Mn acts as a surfactant during epitaxial growth of Cd3As2, resulting in phase separation. Ma…
Electrical manipulation and detection of perpendicular altermagnetic order via proximitized Dirac semimetal
National University of Singapore（新加坡国立大学）；NIST Center for Neutron Research, National Institute of Standards and Technology（美国国家标准与技术研究院中子研究中心）；ISIS Facility, STFC Rutherford Appleton Laboratory（STFC拉瑟福德阿普尔顿实验室ISIS设施）；Institute of Materials Research & Engineering, Agency for ScienceTechnology & Research (A*STAR)（科技研究局材料研究与工程研究所）；National University of Singapore (Chong Qing) Research Institute（新加坡国立大学重庆研究院）
Dirac nodal line semimetals (DNLSs) host relativistic quasiparticles in their one-dimensional (1D) Dirac nodal line (DNL) bands that are protected by certain crystalline symmetries. Their novel low-energy fermion quasiparticle excitations and transport properties invite studies of relativistic physics in the solid state where their linearly dispersing Dirac bands cross at continuous lines with four-fold degeneracy. In materials studied up to now, the four-fold degeneracy, however, has been vulnerable to suppression by the ubiquitous spin-orbit coupling (SOC). Despite the current effort to disc…
Cd3As2 has long been known as a high-mobility semiconductor. The recent finding of a topological semimetal state in this compound has demanded growth of epitaxial films with high crystallinity and controlled thickness. Here we report the structural characterisation of Cd3As2 films grown on SrTiO3 substrates by solid-phase epitaxy at high temperatures up to 600 C by employing optimised capping layers and substrates. The As triangular lattice is epitaxially stacked on the Ti square lattice of the (001) SrTiO3 substrate, producing (112)-oriented Cd3As2 films exhibiting high crystallinity with a r…
We report growth and characterization of epitaxial $α$-Sn thin films grown on CdTe(111)B. Noninvasive techniques verify the film's pseduomorphic growth before fabrication of magnetotransport devices, overcoming ex-situ obstacles on uncapped films for measurement in the Hall bar geometry. We identify a transition to metallic behavior at low temperature with large magnetoresistance, high mobility, and quantum oscillations tentatively suggesting an n-type Dirac semimetallic channel. A parallel p-type dopant channel with high carrier density is seen to dominate at thinner film thicknesses. Careful…
Ti2O3 exhibits a unique metal-insulator transition (MIT) at approximately 450 K over a wide temperature range of ~ 150 K. This broad MIT accompanied by lattice deformation differs from the sharp MITs observed in most other transition-metal oxides. A long-standing issue is determining the role of electron-electron correlation in the electronic structure and MIT of Ti2O3. However, the lack of information about the band structure of Ti2O3 has hindered investigating the origin of its unusual physical properties. Here, we report the electronic band structure of insulating Ti2O3 films with slight ho…
α-Sn with a diamond-type crystal structure provides an ideal avenue to investigate novel topological properties owing to its rich diagram of topological phases and simple elemental material structure. Thus far, however, realisation of high-quality α-Sn remains a challenge, which limits our understanding of its quantum transport properties and device applications. Here, we present epitaxial growth of α-Sn on InSb (001) with the highest quality thus far and reveal that it is a topological Dirac semimetal (TDS) by quantum transport investigations together with first-principles calculations. We re…
