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arXiv 2503.08072cond-mat.mtrl-sci

外延FeSn薄膜中缺陷束缚态对磁场的各向异性响应

Anisotropic response of defect bound states to magnetic field in epitaxial FeSn films

Huimin Zhang, Zhengfei Wang, Michael Weinert, Lian Li

AI总结:

本文利用低温扫描隧道显微镜研究外延FeSn Kagome反铁磁薄膜中Sn空位缺陷诱导的对称性破缺现象,发现缺陷束缚态在面外和面内磁场下分别表现出反常Zeeman位移和二重振荡行为,为纳米自旋电子器件应用提供了新思路。

摘要:

晶体缺陷,无论是本征的还是人工设计的,驱动着量子材料的许多基本现象和新颖功能。本文利用低温扫描隧道显微镜和扫描隧道谱,报道了外延Kagome反铁磁体FeSn薄膜表面由Sn空位缺陷诱导的对称性破缺现象。在Sn空位缺陷附近,微分电导dI/dV图中观察到各向异性的准粒子干涉图案,表明存在二重电子态,打破了Kagome层的六重旋转对称性。此外,Sn空位缺陷诱导的束缚态在面外磁场下表现出反常的Zeeman位移,其能量向高能方向线性移动,且与磁场方向无关。在面内磁场下,束缚态能量的位移随方位角呈现二重振荡行为。这些发现证明了Kagome反铁磁体中缺陷赋予的新功能,在纳米尺度自旋电子器件中具有潜在应用价值。

英文摘要:

Crystal defects, whether intrinsic or engineered, drive many fundamental phenomena and novel functionalities of quantum materials. Here, we report symmetry-breaking phenomena induced by Sn-vacancy defects on the surface of epitaxial Kagome antiferromagnet FeSn films using low-temperature scanning tunneling microscopy and spectroscopy. Near the Sn-vacancy defects, anisotropic quasiparticle interference patterns are observed in the differential conductance dI/dV maps, indicating two-fold electronic states that break the 6-fold rotational symmetry of the Kagome layer. Furthermore, the Sn-vacancy defects induce bound states that exhibit anomalous Zeeman shifts under an out-of-plane magnetic field, where their energy shifts linearly towards higher energy independent of the direction of the magnetic field. Under an in-plane magnetic field, the shift of the bound state energy also shows a two-fold oscillating behavior as a function of the azimuth angle. These findings demonstrate defect-enabled new functionalities in Kagome antiferromagnets for potential applications in nanoscale spintronic devices.

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