The electronic structure and optical response of electrically gated bilayer graphene are studied by first-principles approaches. We have obtained the induced band gap that is in good agreement with experiment when the applied electric field is less than 1.5 V/nm. The infrared optical absorbance is calculated within the single-particle excitation picture and its fine structures are presented. In addition, the calculated infrared optical absorbance is found to be strongly depending on stacking styles of bilayer graphene and the polarization direction of the incident light, which provides efficient ways to identify the electric-field intensity and stacking styles in experiment. Finally, many-electron effects are discussed.
We demonstrate that single layer graphene exhibits the electronic structure of a bilayer when it is connected to two gated bilayers. The energy gap characteristic for gated bilayer is induced in the single layer and it persists for distances separating the bilayers up to 20 nm. Most importantly, we report on the appearance of topologically protected gapless state localized in a single graphene layer when the distant bilayers differ in the stacking order. The one-dimensional current in the topological state flows in a single layer graphene, and this finding suggests a new exploitation of graphe…
Zigzag nanoribbons of monolayer graphene-like two-dimensional materials host spontaneous edge magnetism at the zigzag terminations, whose configuration controls the band gap. In this article, the edge magnetism of zigzag nanoribbons of bilayer hexagonal crystals are studied. The specific models of bilayer graphene and bilayer silicene are both studied. As the gated voltage increases, the total energy level, magnetic structure and band structures of the ground state and the first quasi-stable excited state are tuned. For certain region of the gated voltage, the band gaps of spin up and down are…
We introduce a design of electrically isolated floating bilayer GaAs quantum wells (QW) in which application of a large gating voltage controllably and highly reproducibly induces charges that remain trapped in the bilayer after removal of the gating voltage. At smaller gate voltages, the bilayer is fully electrically isolated from external electrodes by thick insulating barriers. This design permits full control of the total and differential densities of two coupled 2D electron systems. The floating bilayer design provides a unique approach for studying systems inaccessible by simple transpor…
Gated bilayer graphene exhibits spin-degenerate gapless states with a topological character localized at stacking domain walls. These states allow for one-dimensional currents along the domain walls. We herein demonstrate that these topologically protected currents are spin -polarized and locked in a single layer when bilayer graphene contains stacking domain walls decorated with magnetic defects. The magnetic defects, which we model as π-vacancies, perturb the topological states but also lift their spin degeneracy. One gapless state survives the perturbation of these defects, and its spin pol…
We report on transport properties in dual-gated hexagonal boron nitride (hBN)/bilayer-graphene (BLG) superlattices. Here, BLG is nontwisted, i.e., plain. This paper focuses on the charge neutrality point (CNP) for a plain BLG. Under a perpendicular magnetic field, transitions between two insulating phases at the CNP are detected by varying a displacement field with the study on the resistance-temperature characteristics and the magnetoresistance. This work opens avenues for exploring the global phase diagram of the hBN/BLG superlattices beyond the CNP.
Cyclotron resonance (CR) is considered one of the fundamental phenomena in conducting systems. In this paper, we study CR in a gated two-dimensional (2D) electron system (ES). Namely, we analyze the absorption of electromagnetic radiation incident normal to the gated 2DES, where a standard dielectric substrate separates the 2D electron sheet and the metallic steering electrode ("gate"); the whole system is placed in the perpendicular magnetic field. Our analysis reveals the redshift of the absorption peak frequency compared to the electron cyclotron frequency. The redshift appears in low-frequ…
We investigate the electronic band structure and the proximity exchange effect in bilayer graphene on a family of ferromagnetic multilayers Cr$_2$X$_2$Te$_6$, X=Ge, Si, and Sn, with first principles methods. In each case the intrinsic electric field of the heterostructure induces an orbital gap on the order of 10 meV in the graphene bilayer. The proximity exchange is strongly band dependent. For example, in the case of Cr$_2$Ge$_2$Te$_6$, the low-energy valence band of bilayer graphene has exchange splitting of 8 meV, while the low energy conduction band's splitting is 30 times less (0.3 meV).…
Twisted bilayer graphene has recently attracted a lot of attention for its rich electronic properties and tunability. Here we show that for very small twist angles, $α\ll 1^\circ$, the application of a perpendicular electric field is mathematically equivalent to a new kind of artificial gauge field. This identification opens the door for the generation and detection of pseudo-Landau levels in graphene platforms within robust setups which do not depend on strain engineering and therefore can be realistically harvested for technological applications. Furthermore, this new artificial gauge field …
Efficient control of magnetism with electric means is a central issue of current spintronics research, which opens an opportunity to design integrated spintronic devices. However, recent well-studied methods are mostly based on electric-current injection, and they are inevitably accompanied by considerable energy losses through Joule heating. Here we theoretically propose a way to exert spin torques into magnetic bilayer systems by application of electric voltages through taking advantage of the Rashba spin-orbit interaction. The torques resemble the well-known electric-current-induced torques…
Moire superlattices in twisted transition metal dichalcogenide bilayers have emerged as a rich platform for exploring strong correlations using optical spectroscopy. Despite observation of rich Mott-Wigner physics stemming from an interplay between the periodic potential and Coulomb interactions, the absence of tunnel coupling induced hybridization of electronic states ensured a classical layer degree of freedom in these experiments. Here, we investigate a MoSe$_2$ homobilayer structure where inter-layer coherent tunnelling and layer-selective optical transitions allow for electric field contr…
Screening in gated bilayer graphene via variational calculus
我们使用变分法分析了双层石墨烯对外部横向电场的响应。在Falkovsky最近的一篇论文[Phys. Rev. B 80，113413（2009）]中，先前的尝试被证明是有缺陷的。我们的计算再次肯定了我们[E. McCann，Phys.Rev.B74，161403（R）（2006）]。最后，我们推广这些原始结果来描述一个双栅双层石墨烯器件。
We present atomistic calculations on structural and electronic properties of twisted double bilayer graphene (TDBG) consisting of two sets of rotationally misaligned Bernal-stacked bilayer graphene. Obtained equilibrium atomic structures exhibit in-plane strains and the modulation of the interlayer distances at the rotationally mismatched interface layers. We find that the electronic structure of TDBG can have an intrinsic band gap at the charge neutral point for a large range of the twist angle theta. Near theta = 1.25 degree, the intrinsic band gap disappears and TDBG hosts flat bands at the…
Compared to monolayer graphene, electrons in Bernal-stacked bilayer graphene (BLG) have an additional layer degree of freedom, offering a platform for developing {\it layered spintronics} with the help of proximity-induced magnetism. Based on an effective phenomenological model, we systematically study the effect of this magnetism on the spin-dependent band structure near the Fermi energy and identify the magnetic phases induced in BLG by proximity with magnets. We show that spin polarization can develop in BLG due to this proximity effect. This spin polarization depends strongly on the layer …
We study ballistic transport in periodically gated bilayer graphene as a candidate for a 2D electronic metamaterial. Our calculations use the equilibrium Green function formalism and take into account quantum corrections to charge density changes induced by a periodically modulated top gate voltage. Our results reveal an intriguing interference-like pattern, similar to that of a Fabry-Perot interferometer, in the resistance map as a function of the voltage $V_{BG}$ applied to the extended bottom gate and $V_{TG}$ applied to the periodic top gate.
Spin qubits with electrically gated polyoxometalate molecules
自旋量子比特为实现量子计算机提供了最有前途的途径之一。半导体量子点的最新结果表明，电控门控方案特别适合于实现一组通用的量子逻辑门。然而，对于这种半导体量子点来说，可扩展到更大数量的量子位仍然是一个问题。相比之下，化学自下而上的方法允许人们产生相同的单位，其中局域自旋代表量子位。分子磁性已经产生了广泛的系统与定制的性能，但分子允许电门控一直缺乏。在这里，我们建议使用聚氧乙烯酸盐[PMo 1/2 O 40（VO）2]q-，其中两个本地化的自旋-1/2可以通过中央核心的电子耦合。通过分子氧化还原电位的电操纵，可以改变核的电荷。通过这种设置，可以实现两个量子位门和量子位读出。
Moiré structures in small-angle-twisted bilayers of two-dimensional semiconductors with a broken-symmetry interface form arrays of ferroelectric domains with periodically alternating out-of-plane polarization. Here, we propose a network theory for the tunability of such FE domain structure by applying an electric field perpendicular to the 2D crystal. Using multiscale analysis, we derive a fully parametrized string-theory-like description of the domain wall network and show that it undergoes a qualitative change, after the arcs of partial dislocation like domain walls merge (near the network n…
We report the discovery of a strong and tunable spin lifetime anisotropy with excellent spin lifetimes up to 7.8 ns in dual-gated bilayer graphene. Remarkably, this realizes the manipulation of spins in graphene by electrically-controlled spin-orbit fields, which is unexpected due to graphene's weak intrinsic spin-orbit coupling. We utilize both the in-plane magnetic field Hanle precession and oblique Hanle precession measurements to directly compare the lifetimes of out-of-plane vs. in-plane spins. We find that near the charge neutrality point, the application of a perpendicular electric fiel…
