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arXiv 1804.09362cond-mat.mtrl-sci
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通过结构和化学调控实现过渡金属PerxO2硫族化合物的带隙控制

Band-Gap Control via Structural and Chemical Tuning of Transition Metal Perovskite Chalcogenides

Shanyuan Niu, Huaixun Huyan, Yang Liu, Matthew Yeung, Kevin Ye, Louis Blankemeier, Thomas Orvis, Debarghya Sarkar, David J. Singh, Rehan Kapadia, Jayakanth Ravichandran

摘要:

过渡金属钙钛矿硫族化合物(TMPC)是一类新型的半导体材料,由于其化学和结构的灵活性,具有广泛的物理性质的可调谐性。理论计算表明,TMPC的带隙在远红外到紫外波段是可调的。在这些材料中,有不少材料具有能隙和非常高的吸收系数,适合光电应用,特别是太阳能转换。尽管有几个有前途的理论预测,目前很少有实验研究的物理性质,特别是光学性能。我们报告了一种新的合成路线,对高品质的块体陶瓷TMPC和系统的研究,三个阶段,SrZrS3在两个不同的室温稳定相和BaZrS3之一。所有这三种材料都是在密封安瓿中用催化固态反应工艺合成的。结构和化学表征确立了高质量的样品,这是由强烈的室温光致发光(PL)光谱证实,直接带隙分别约为1.53eV,2.13eV和1.81eV。通过测量光致发光量子效率和估算准费米能级分裂,评价了这些材料用于太阳能转换的潜力。

英文摘要:

Transition metal perovskite chalcogenides (TMPC) are a new class of semiconductor materials with broad tunability of physical properties due to their chemical and structural flexibility. Theoretical calculations show that band gaps of TMPCs are tunable from Far IR to UV spectrum. Amongst these materials, more than a handful of materials have energy gap and very high absorption coefficients, which are appropriate for optoelectronic applications, especially solar energy conversion. Despite several promising theoretical predictions, very little experimental studies on their physical properties are currently available, especially optical properties. We report a new synthetic route towards high quality bulk ceramic TMPCs and systematic study of three phases, SrZrS3 in two different room temperature stabilized phases and one of BaZrS3. All three materials were synthesized with a catalyzed solid-state reaction process in sealed ampoules. Structural and chemical characterizations establish high quality of the samples, which is confirmed by the intense room temperature photoluminescence (PL) spectra showing direct band gaps around 1.53eV, 2.13eV and 1.81eV respectively. The potential of these materials for solar energy conversion was evaluated by measurement of PL quantum efficiency and estimate of quasi Fermi level splitting.

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