Two boron-rich chalcogenides B12S and B12Se isostructural to α-rhombohedral boron were synthesized by chemical reaction of the elements at high-pressure - high-temperature conditions. The crystal structures and stoichiometries of both compounds were confirmed by Rietveld refinement and elemental analysis. The experimental Raman spectra of B12S and B12Se were investigated for the first time. All observed Raman bands have been attributed to the theoretically calculated phonon modes, and the mode assignment has been performed.
New boron-rich sulfide B6S and selenide B6Se have been discovered from high pressure - high temperature synthesis combined with ab initio evolutionary crystal structure prediction, and studied by synchrotron X-ray diffraction and Raman spectroscopy at ambient conditions. As it follows from Rietveld refinement of powder X-ray diffraction data, both chalcogenides have orthorhombic symmetry and belongs to Pmna space group. All experimentally observed Raman bands have been attributed to the theoretically calculated phonon modes, and the mode assignment has been performed. Prediction of mechanical …
Boron rich chalcogenides have been predicted to have excellent properties for optical and mechanical applications in recent times. In this regard, we report the electronic, optical and mechanical properties of recently synthesized boron rich chalcogenide compounds, B12X (X = S and Se) using density functional theory for the first time. The effects of exchange and correlation functional on these properties are also investigated. The consistency of the obtained crystal structure with the reported experimental results has been checked in terms of lattice parameters. The considered materials are m…
Our searches for new oxide chalcogenides of rare earths and Fe, Co, Ni, and Zn resulted in preparation of two new compounds Ce2Fe2O3S2 and Pr2Fe2O3S2 which are isostructural to La2Fe2O3Se2 and Sm2Ti2O3Sb2. Crystal structures of the new compounds Ce2Fe2O3S2 and Pr2Fe2O3S2 were determined from powder X-ray diffraction data. Magnetic measurements were performed for Ce2Fe2O3S2 and revealed behavior very similar to that of isostructural oxide chalcogenides of iron and pnictides of titanium. In particular, no superconductivity was observed down to 4 K. Crystal chemical factors determining the stabil…
The typical two-dimensional semiconductors, group \uppercase\expandafter{\romannumeral3A} chalcogenides, have garnered tremendous interest for their outstanding electronic, mechanical, and chemical properties. However, so far, there have been almost no reports on boron monosulfides (BS) binary material. Here, four two-dimensional BS sheets, namely the $α$-, $β$-, $γ$-, and $δ$-BS sheets, are proposed and discussed from $\emph{ab initio}$ calculations. State-of-the-art first-principles calculations reveal all these structures are thermally and dynamically stable, indicating the potential for su…
Thermal expansion of MAX phases along different directions tended to be different because of the anisotropy of hexagonal crystals. Herein, a new Hf2SeC phase was synthesized and confirmed to be relatively isotropic, whose coefficients of thermal expansion (CTEs) were determined to be 9.73 μK-1 and 10.18 μK-1 along a and c directions. The strong M-S bond endowed Hf2SC and Zr2SC lower CTEs than Hf2SeC and Zr2SeC. A good relationship between the thermal expansion anisotropy and the ratio of elastic stiffness constant c11 and c33 was established. This straightforward approximation could be used to…
Two new methods to produce nanopowders of B12P2 boron subphosphide by self-propagating high-temperature synthesis have been proposed. Bulk polycrystalline B12P2 with microhardness of HV = 35(3) GPa and stability in air up to 1300 K has been prepared by sintering these powders at 5.2 GPa and 2500 K.
A new method of producing boron phosphide (BP) submicron powders by self-propagating high-temperature reaction between boron phosphate and magnesium in the presence of an inert diluent (sodium chloride) has been proposed. Bulk polycrystalline BP with microhardness of HV = 28(2) GPa has been prepared by sintering the above powders at 7.7 GPa and 2600 K.
The formation of boron carbide under high pressures and from elemental reactants has been studied and optimum parameters have been determined by varying the (P, T, reactants) conditions. To this end, stoichiometric mixtures of commercial beta rhombohedral boron and amorphous glassy carbon have been subjected to temperatures ranging from 1473 K to 2473 K at pressures of 2 GPa, 5 GPa and 13 GPa. Similar syntheses have been repeated for mixtures of beta boron and graphite, and amorphous boron and amorphous carbon at 2 GPa and 5 GPa. The carbon concentration of boron carbide is shown to be affecte…
The role of carbon in the formation of alpha boron at high pressure and high temperature (HPHT) has been investigated by combining HPHT experiments and density functional theory (DFT) calculations. Starting from beta rhombohedral or amorphous boron and amorphous carbon at 5 GPa, the alpha boron phase has been repeatedly observed between 1473 K and 2273 K, at temperatures that are much higher than those reported in the phase diagram of boron. The DFT investigation of the effect of carbon insertion into the alpha rhombohedral boron atomic structure on the formation enthalpy, volume and optical p…
In an attempt to understand why catalytic methods for the growth of boron nitride nanotubes work much worse than for their carbon counterparts, we use first-principles calculations to study the energetics of elemental reactions forming N2, B2 and BN molecules on an iron catalyst. We observe that in the case of these small molecules, the catalytic activity is hindered by the formation of B2 on the iron surface. We also observe that the local morphology of a step edge present in our nanoparticle model stabilizes the boron nitride molecule with respect to B2 due to the ability of the step edge to…
Synthesis and research of the properties of boron nitride powders and BN powders with additives produced under effect of concentrated light in a flow of nitrogen in a xenon high-flux optical furnace are presented. A scanning and transmission electron microscopes demonstrated structures of new morphologies for the powders, which were formed. XRD, Raman scattering and electron diffraction study have confirmed a complicated structure and phase composition of the powders with a prevalence of the amorphous phases. It was demonstrated an effect of experimental conditions, surface modification and ad…
This paper focuses on the synthesis of rhombohedral B4C (r-B4C) coatings by CO2 laser-assisted chemical vapour deposition (LCVD), using a dynamic reactive atmosphere of BCl3, H2 and CH4 or C2H4. The influence of the carbon precursor on the deposition kinetics is discussed. The use of ethylene as carbon precursor presents several advantages over the use of methane, which is the conventional carbon precursor in CVD processes. These advantages are mainly related to its high absorption coefficient at the laser wavelength and a higher sticking coefficient, which enables to attain higher deposition …
We present the successful synthesis of single-atom-thick borophene nanoribbons (BNRs) by self-assembly of boron on Ag(110) surface. The scanning tunneling microscopy (STM) studies reveal high quality BNRs: all the ribbons are along the [-110] direction of Ag(110), and can run across the steps on the surface. The width of ribbons is distributed in a narrow range around 10.3 nm. High resolution STM images revealed four ordered surface structures in BNRs. Combined with DFT calculations, we found that all the four structures of boron nanoribbons consist of the boron chains with different width, se…
Barium zirconium sulfide (BaZrS3) is an earth-abundant and environmentally friendly chalcogenide perovskite with promising properties for various energy conversion applications. Recently, sulfurization of oxide precursors has been suggested as a viable solution for effective synthesis, especially from the perspective of circumventing the difficulty of handling alkali earth metals. In this work, we explore in detail the synthesis of BaZrS3 from Ba-Zr-O oxide precursor films sulfurized at temperatures ranging from 700 °C to 1000 °C. We propose a formation mechanism of BaZrS3 based on a two-step …
Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni sub…
The scalable synthesis of two-dimensional (2D) hexagonal boron nitride (h-BN) is of great interest for its numerous applications in novel electronic devices. Highly-crystalline h-BN films, with single-crystal sizes up to hundreds of microns, are demonstrated via a novel Ni foam assisted technique reported here for the first time. The nucleation density of h-BN domains can be significantly reduced due to the high boron solubility, as well as the large specific surface area of the Ni foam. The crystalline structure of the h-BN domains is found to be well aligned with, and therefore strongly depe…
Hexagonal boron nitride (h-BN) has attracted significant attention due to its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapor deposition in earlier reports are always polycrystalline with small grains due to high nucleation density on substrates. Here we report the successful synthesis of large single-crystal h-BN grains on rational designed Cu-Ni alloy foils. It is found that the nucleation density can be greatly reduced to 60 per mm2 by optimizing Ni ratio in substrates. The strategy enables the …
We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (hbn) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, X-ray photoemission and absorption techniques. It has been demonstrated that the transition of the hbn layer from the "rigid" into the "quasi-freestanding" state is accompanied by a change of its lattice constant. Using chemical vapor deposition, graphene has been succe…
III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak posi…
Two-dimensional graphene exhibits many fascinating properties such as ballistic electronic conduction and quantum Hall effect at room temperature.1-4 Graphene doped electrochemically or through charge-transfer with electron-donor and -acceptor molecules,5-7 shows marked changes in electronic structure, with characteristic signatures in the Raman spectra.5-10 Substitutional doping, universally used in tuning properties of semiconductors, could be a powerful tool to control the electronic properties of graphene. Here, we present the structure and properties of boron and nitrogen doped graphenes,…
We report the synthesis and characterization of a novel class of ionic semiconductor materials- inorganic chalcogenide perovskites. Several different compounds including BaZrS3, CaZrS3, SrTiS3 and SrZrS3 were synthesized by high temperature sulfurization of their oxide counterparts. Their crystal structures were identified by XRD and composition by EDX. UV-vis and photoluminescence measurements confirmed that they are direct gap semiconductors with band gap values consistent with theoretical predictions. By adopting an anion alloying approach, we demonstrate widely tunable band gap from 1.73 e…
We have synthesized tetragonal iron selenide and telluride superconductors through solid state reaction at 450deg.C and 550deg.C respectively. These synthesis temperatures have been established by optimization. Electrical resistivity and magnetic susceptibility measurements (4.2-300 K) confirm superconductivity with Tc of around 8.5 K in all selenide samples of nominal composition Fe1+deltaSe (delta=0.02-0.22). However, Scanning Electron Microscopy/ Energy Dispersive Spectroscopy studies clearly indicate that the actual stoichiometric ratio of Fe : Se for all the samples synthesized is around …
In this paper, we report a new boron nitride molecular structure called BN-nanobelt, an inorganic analog of (12) cyclophenacene synthesized in 2017. An extensive investigation using Density Functional Theory (DFT) and Quantum Molecular Dynamics (QMD) calculations showed that BN-nanobelt is a structurally and thermally stable molecule with all positive vibrational frequencies. BN-nanobelt behaves as an insulator, and it absorbs in the ultraviolet region, suggesting a potential application as a UV detector. All results presented in this paper indicate structural stability and the possibility of …
Microstructure of boron subphosphide B12P2 produced by self-propagated high-temperature synthesis has been studied by high-resolution transmission electron microscopy. Two systems of twins have been found i.e. conventional twins on the (0003)h plane and nanotwins resulting from duplication of the rhombohedral unit cell of B12P2 along one of the basic vectors.
Boron-assisted synthesis of compositionally complex amorphous oxides via short-range-order-constrained generative design
Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University（吉林大学物理学院教育部材料模拟方法与软件重点实验室）；Aiiso Yufeng Li Family Department of Chemical and Nano Engineering, University of California, San Diego（加州大学圣地亚哥分校爱思唯尔俞峰李家族化学与纳米工程系）；College of Chemistry and Molecular Engineering, Peking University（北京大学化学与分子工程学院）；Institute of Molecular Engineering Plus, College of Chemistry, Fuzhou University（福州大学化学学院分子工程+研究院）；Institute of Modern Physics, Fudan University（复旦大学现代物质结构研究所）；Program in Materials Science and Engineering, University of California, San Diego（加州大学圣地亚哥分校材料科学与工程项目）；Center for Renewable Energy and Storage Technologies, Physical Science and Engineering Division, King Abdullah University of Science and Technology（阿卜杜拉国王科技大学物理科学与工程学院可再生能源与储能技术中心）；Department of Computer Science and Engineering, University of California, San Diego（加州大学圣地亚哥分校计算机科学与工程系）
Inspired by the recent first-principles calculations showing the high thermoelectric performance of layered pnictogen chalcogenides, we experimentally characterise the crystal structure and high-temperature transport properties of the layered antimony selenides REOSbSe2 (RE = La, Ce). The crystal structure of REOSbSe2 was the tetragonal P4/nmm space group, consisting of alternate stacks of SbSe2 and REO layers. These two compounds were n-type semiconductors. The optical band gaps of LaOSbSe2 and CeOSbSe2 were evaluated to be 1.0 and 0.6 eV, respectively. The room-temperature thermal conductivi…
Boron carbide thin films were synthesised by laser-assisted chemical vapour deposition (LCVD), using a CO2 laser beam and boron trichloride and methane as precursors. Boron and carbon contents were measured by electron probe microanalysis (EPMA). Microstructural analysis was carried out by Raman microspectroscopy and glancing incidence X-ray diffraction (GIXRD) was used to study the crystallographic structure and to determine the lattice parameters of the polycrystalline films. The rhombohedral-hexagonal boron carbide crystal lattice constants were plotted as a function of the carbon content, …
Owing to its superior visible light absorption and high chemical stability, chalcogenide perovskite barium zirconium sulfide has attracted significant attention in the past few years as a potential alternative to hybrid halide perovskites for optoelectronics. However, the high processing temperatures of BaZrS3 thin films at above 1000 C severely limits their potential for device applications. Herein, we report the synthesis of BaZrS3 thin films at temperatures as low as 500 C, by changing the chemical reaction pathway. The single phase BaZrS3 thin film was confirmed by X-ray diffraction and Ra…
We use ab initio calculations to examine thermodynamic factors that could promote the formation of recently proposed unique oP10-FeB4 and oP12-FeB2 compounds. We demonstrate that these compact boron-rich phases are stabilized further under pressure. We also show that chromium tetraboride is more stable in the new oP10 rather than the reported oI10 structure which opens up the possibility of realizing an oP10-Fe(x)Cr(1-x)B4 pseudobinary material. In addition to exhibiting remarkable electronic features, oP10-FeB4 and oP12-FeB2 are expected to be harder than the known Fe-B compounds commonly use…
In this paper we report a new synthesis route to produce boron powders characterized as being amorphous and having very fine particle size. This route has been developed to improve the performances of superconducting MgB2 powders, which can be directly synthesized from this nano-structured boron precursor by following the ex-situ or the in-situ P.I.T. method during the manufacturing of tapes, wires and cables. All the procedure steps are explained and the chemical-physical characterization of the boron powder, using x-ray diffraction (Xrd), scanning electron microscopy (SEM) and transmission e…
Due to the spatial confinement, two-dimensional metal chalcogenides display an extraordinary optical re-sponse and carrier transport ability. Solution-based synthesis techniques such as colloidal hot injection and ion exchange provide a cost-effective way to fabricate such low-dimensional semiconducting nanocrystals. Over the years, developments in colloidal chemistry made it possible to synthesize various kinds of ultrathin colloidal nanoplatelets, including wurtzite- and zinc blende-type CdSe, rocksalt PbS, black phosphorus-like SnX (X=S or Se), hexagonal copper sulfides, selenides and even …
Fluorescent nanoparticles are widely utilized in a large range of nanoscale imaging and sensing applications. While ultra-small nanoparticles (size <10 nm) are highly desirable, at this size range their photostability can be compromised due to effects such as intensity fluctuation and spectral diffusion caused by interaction with surface states. In this letter, we demonstrate a facile, bottom-up technique for the fabrication of sub-10-nm hBN nanoparticles hosting photostable bright emitters via a catalyst-free hydrothermal reaction between boric acid and melamine. We also implement a simple st…
We calculate the two-photon absorption in bulk and single layer hexagonal boron nitride (hBN) both by an ab-initio real-time Bethe-Salpeter approach and by a the real-space solution of the excitonic problem in tight-binding formalism. The two-photon absorption obeys different selection rules from those governing linear optics and therefore provides complementary information on the electronic excitations of hBN. Combining the results from the simulations with a symmetry analysis we show that two-photon absorption is able to probe the lowest energy $1s$ states in the single layer hBN and the low…
In the present study, the structural and hitherto uninvestigated mechanical (elastic stiffness constants, machinability index, Cauchy pressure, anisotropy indices, brittleness/ductility, Poissons ratio), electronic, optical, and thermodynamic properties of novel boron-rich compounds B6X (X = S, Se) have been explored using density functional theory. The estimated structural lattice parameters were consistent with the prior report. The mechanical and dynamical stability of these compounds have been established theoretically. The materials are brittle in nature and elastically anisotropic. The v…
This work demonstrates the effectiveness of the high-pressure method for the production of graphite and diamond with a high degree of boron doping using adamantanecarborane mixture as a precursor. At 8 GPa and $1700 ^{o}C$, graphite is obtained from adamantane $C_{10}H_{16}$, whereas microcrystals of boron-doped diamond (2÷2.5 at.% of boron) are synthesized from a mixture of adamantane and ortho-carborane $C_{2}B_{10}H_{12}$ (atomic ratio B:C = 5:95). This result shows convincingly the catalytical activity of boron in the synthesis of diamond under high pressure. At pressures lower than 7 GPa,…
Despite recent successes in the synthesis of boron nanotubes (BNTs), the atomic arrangement of their walls has not yet been determined and many questions about their basic properties do remain. Here, we unveil the dynamical stability of BNTs by means of first-principles molecular dynamics simulations. We find that free-standing, single-wall BNTs with diameters larger than 0.6 nm are thermally stable at the experimentally reported synthesis temperature of 870$^\circ$C and higher. The walls of thermally stable BNTs are found to have a variety of different mixed triangular-hexagonal morphologies.…
In this paper we have theoretically found the activation energy ($420.38kJ/mol$) for the transformation from hBN to cBN in the microscopic viewpoint. We have introduced an analytical formula representing the dependence of nucleus formation time on the activation energy, synthesis pressure and temperature. We have theoretically determined the boundary line of cBN nucleus formation region in the $P-T$ phase diagram on the basis of the diffusion mechanism of cBN nucleus formation. We have found that the cBN crystal nucleus formation time is less than $300ms$ by comparing of the theory and experim…
In the wide world of 2D materials, hexagonal boron nitride (hBN) holds a special place due to its excellent characteristics. In addition to its thermal, chemical and mechanical stability, hBN demonstrates high thermal conductivity, low compressibility, and wide band gap around 6 eV, making it promising candidate for many groundbreaking applications and more specifically for optoelectronic devices. Millimeters scale hexagonal boron nitride crystals are obtained through a disruptive dual method (PDC/PCS) consisting in a complementary coupling of the Polymer Derived Ceramics route and a Pressure-…
Hexagonal boron nitride (h-BN) is unique among two-dimensional materials, with a large band gap (~6 eV) and high thermal conductivity (>400 W/m/K), second only to diamond among electrical insulators. Most electronic studies to date have relied on h-BN exfoliated from bulk crystals; however, for scalable applications the material must be synthesized by methods such as chemical vapor deposition (CVD). Here, we demonstrate single- and few-layer h-BN synthesized by CVD on single crystal platinum and on carbon nanotube (CNT) substrates, also comparing these films with h-BN deposited on the more com…
Two new perovskite oxychalcogenides, Ca2CuFeO3S and Ca2CuFeO3Se, have been synthesized in evacuated quartz tubes. They crystallize in P4/nmm space group with lattice parameters a = 3.8271(1), c = 14.9485(2) Å and a = 3.8605(1), c = 15.3030(2) Å for Ca2CuFeO3S and Ca2CuFeO3Se, respectively. They appear to be the first layered chalcogenide perovskites involving calcium and are structural analogs of the corresponding Sr and Ba compounds. The new compounds exhibit semiconducting properties with energy gap decreasing from the oxysulfide to the oxyselenide. Possibility of introducing Ca2+ into struc…
Sintered powders and wires of superconducting $MgB_2$ have been fabricated under a variety of conditions in order to determine details of the diffusion of the $Mg$ into $B$ and to study the types of defects that arise during growth. For samples prepared by exposure of boron to $Mg$ vapor at $950^{\circ}C$, the conversion of particles of less than $100μm$ size particles to $MgB_2$ is complete in about $2 h$. The lattice parameters of the $MgB_2$ phase determined from X-ray are independent of the starting stoichiometry and the time of reaction. Wire segments of $MgB_2$ with very little porosity …
Chemical vapor deposition synthesis of large domain hexagonal boron nitride (h-BN) with uniform thickness on Cu foils is of great challenge, originating from the extremely high nucleation densities and the reverse hydrogen etching competition reaction. We report herein the successful growth of wafer-scale high-quality h-BN monolayer film with the largest single crystalline domain sizes up to 72 micrometer in edge length using a folded Cu enclosure approach. The highly-confined growth space with this facile and unique approach enables the drastic decrease of nucleation centers together with the…
We introduce two-dimensional borane, a single-layered material of BH stoichiometry, with promising electronic properties. We show that, according to Density Functional Theory calculations, two-dimensional borane is semimetallic, with two symmetry-related Dirac cones meeting right at the Fermi energy $E_f$. The curvature of the cones is lower than in graphene, thus closer to the ideal linear dispersion. Its structure, formed by a puckered trigonal boron network with hydrogen atoms connected to each boron atom, can be understood as distorted, hydrogenated borophene (Science \textbf{350}, 1513 (2…
Recent synthesis of monolayer borophene (triangle boron monolayer) on the substrate opens the era of boron nanosheet (Science, 350, 1513, $\mathbf{2015}$), but the structural stability and novel physical properties are still open issues. Here we demonstrated borophene can be stabilized with fully surface hydrogenation, called as borophane, from first-principles calculations. Most interesting, it shows that borophane has direction-dependent Dirac cones, which are mainly contributed by in-plane \emph{p$_{x}$} and \emph{p$_{y}$} orbitals of boron atoms. The Dirac fermions possess an ultrahigh Fer…
