金刚烷和正碳硼烷高压合成高硼掺杂石墨和金刚石
Highly Boron-Doped Graphite and Diamond Synthesized From Adamantane and Ortho-Carborane under High Pressure
摘要：
这项工作证明了使用金刚烷碳硼烷混合物作为前体生产具有高度硼掺杂的石墨和金刚石的高压方法的有效性。在8GPa和$1700 ^{o}C$下，石墨由金刚烷$C_{10}H_{16}$获得，而硼掺杂金刚石（2 × 2.5at.%）的微晶由金刚石（2 × 2.5at.%）获得。由金刚烷和邻碳硼烷$C_{2}B_{10}H_{12}$（原子比B：C = 5：95）的混合物合成。这一结果有力地说明了硼在高压合成金刚石中的催化活性。在低于7GPa的压力下，只有石墨由金刚烷和碳硼烷混合物合成。石墨化在相当低的温度（低于$1400 ^{o}C$）下开始，并且温度的增加同时增加硼含量和石墨晶格的质量。对材料结构的深入研究使我们能够假设在高硼浓度（> 1at.%）下，替代硼原子在石墨层中周期性地且彼此等距地分布。理论论证和模型从头计算证实了这一假设，并解释了实验观察到的硼浓度。
英文摘要：
This work demonstrates the effectiveness of the high-pressure method for the production of graphite and diamond with a high degree of boron doping using adamantanecarborane mixture as a precursor. At 8 GPa and $1700 ^{o}C$, graphite is obtained from adamantane $C_{10}H_{16}$, whereas microcrystals of boron-doped diamond (2÷2.5 at.% of boron) are synthesized from a mixture of adamantane and ortho-carborane $C_{2}B_{10}H_{12}$ (atomic ratio B:C = 5:95). This result shows convincingly the catalytical activity of boron in the synthesis of diamond under high pressure. At pressures lower than 7 GPa, only graphite is synthesized from the adamantane and carborane mixture. Graphitization starts at quite low temperatures (below $1400 ^{o}C$) and an increase in temperature simultaneously increases boron content and the quality of the graphite crystal lattice. Thorough study of the material structure allows us to assume that the substitutional boron atoms are distributed periodically and equidistantly from each other in the graphite layers at high boron concentrations (>1 at.%). The theoretical arguments and model ab initio calculations confirm this assumption and explain the experimentally observed boron concentrations.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
