离子液体门控诱导过渡金属硫族化合物的自插层

Evolution of Insulator-Metal Phase Transitions in Epitaxial Tungsten Oxide Films during Electrolyte-Gating

An interface between an oxide and an electrolyte gives rise to various processes as exemplified by electrostatic charge accumulation/depletion and electrochemical reactions such as intercalation/decalation under electric field. Here we directly compare typical device operations of those in electric double layer transistor geometry by adopting ${A}$-site vacant perovskite WO$_3$ epitaxial thin films as a channel material and two different electrolytes as gating agent. $\textit{In situ}$ measurements of x-ray diffraction and channel resistance performed during the gating revealed that in both th…

通过碱离子插层在范德华磁体中产生自旋玻璃态

Spin-glass states generated in a van der Waals magnet by alkali-ion intercalation

本文通过将Na原子插入Cr$_2$Ge$_2$Te$_6$的范德华间隙引入磁阻挫，成功在铁磁序共存下产生自旋玻璃态，并将居里温度从66 K提升至240 K，揭示了插层作为生成阻挫自旋态的新途径。

从铁磁半导体到反铁磁金属：在异质外延Cr$_x$Te$_y$单层中的转变

From ferromagnetic semiconductor to anti-ferromagnetic metal in epitaxial Cr$_x$Te$_y$ monolayers

研究通过控制Cr基硫化物的自插入，揭示单层CrTe₂为反铁磁金属，而Cr$_{2+\varepsilon}$Te$_3$为铁磁半导体，为二维自旋电子学提供新材料体系。

Anomalous metallic phase in molybdenum disulphide induced via gate-driven organic ion intercalation

Transition metal dichalcogenides exhibit rich phase diagrams dominated by the interplay of superconductivity and charge density waves, which often result in anomalies in the electric transport properties. Here, we employ the ionic gating technique to realize a tunable, non-volatile organic ion intercalation in bulk single crystals of molybdenum disulphide (MoS$_{2}$). We demonstrate that this gate-driven organic ion intercalation induces a strong electron doping in the system without changing the pristine $2H$ crystal symmetry and triggers the emergence of a re-entrant insulator-to-metal trans…

Photoemission induced gating of topological insulator

The recently discovered topological insulators exhibit topologically protected metallic surface states which are interesting from the fundamental point of view and could be useful for various applications if an appropriate electronic gating can be realized. Our photoemission study of Cu intercalated Bi2Se3 shows that the surface states occupancy in this material can be tuned by changing the photon energy and understood as a photoemission induced gating effect. Our finding provides an effective tool to investigate the new physics coming from the topological surface states and suggests the inter…

Insulator to Metal Transition in WO$_3$ Induced by Electrolyte Gating

Tungsten oxide and its associated bronzes (compounds of tungsten oxide and an alkali metal) are well known for their interesting optical and electrical characteristics. We have modified the transport properties of thin WO$_3$ films by electrolyte gating using both ionic liquids and polymer electrolytes. We are able to tune the resistivity of the gated film by more than five orders of magnitude, and a clear insulator-to-metal transition is observed. To clarify the doping mechanism, we have performed a series of incisive operando experiments, ruling out both a purely electronic effect (charge ac…

Superconductivity in Li-intercalated 1T-SnSe2 driven by electric-field gating

Creating carrier reservoirs in layered compounds can effectively tune the carrier density, which often induces a variety of emergent properties. Based on solid-ion-conductor gating technique, we successfully induce superconductivity of 4.8 K in ultrathin Li-intercalated SnSe2 samples. The Li+ ions are driven in between interspacing of SnSe2 layers and form a single reservoir layer to provide electrons. In addition, a dome-like T c is found through substituting of S for Se, where the optimal T c is 6.2 K for SnSe1.8S0.2. Density functional theory calculations confirm that the intercalated LiSnS…

有机离子插层CrSBr中200K以上的铁磁性

Ferromagnetism above 200 K in organic-ion intercalated CrSBr

通过有机离子插层，CrSBr在200K以上表现出铁磁性，显著提高磁转变温度并展现高磁电阻。

通过氯化物插层实现金属基底上石墨烯纳米带的电子解耦与空穴掺杂

Electronic decoupling and hole-doping of graphene nanoribbons on metal substrates by chloride intercalation

本文提出通过氯化金介电层插层到Au(111)表面石墨烯纳米带下方，实现GNRs与金属基底的电子解耦及显著空穴掺杂，为重空穴掺杂态下GNRs电子性质的原位研究提供了简便工具。

门控驱动的氢插层在电荷密度波化合物 1T-TiSe2 中诱导的超导性

Superconductivity induced by gate-driven hydrogen intercalation in the charge-density-wave compound 1T-TiSe2

本研究通过离子液体门控驱动的氢插层实现了对二硒化钛电子基态的非易失性控制，诱导出与电荷密度波共存的超导相，该相具有无能隙和多带特性，为层状材料基态工程提供了新方法。

Possible charge-density-wave signatures in the anomalous resistivity of Li-intercalated multilayer MoS2

We fabricate ion-gated field-effect transistors (iFET) on mechanically exfoliated multilayer MoS$_2$. We encapsulate the flake by Al$_2$O$_3$, leaving the device channel exposed at the edges only. A stable Li$^+$ intercalation in the MoS$_2$ lattice is induced by gating the samples with a Li-based polymeric electrolyte above $\sim$ 330 K and the doping state is fixed by quenching the device to $\sim$ 300 K. This intercalation process induces the emergence of anomalies in the temperature dependence of the sheet resistance and its first derivative, which are typically associated with structural/…

Electronic Structure of Transition Metal Dichalcogenides PdTe2 and Cu0.05PdTe2 Superconductors Obtained by Angle-Resolved Photoemission Spectroscopy

The layered transition metal chalcogenides have been a fertile land in solid state physics for many decades. Various MX2-type transition metal dichalcogenides, such as WTe2, IrTe2, and MoS2, have triggered great attention recently, either for the discovery of novel phenomena or some extreme or exotic physical properties, or for their potential applications. PdTe2 is a superconductor in the class of transition metal dichalcogenides, and superconductivity is enhanced in its Cu-intercalated form, Cu0.05PdTe2. It is important to study the electronic structures of PdTe2 and its intercalated form in…