锂层间多层膜MoS2异常电阻率中可能的电荷密度波特征
Possible charge-density-wave signatures in the anomalous resistivity of Li-intercalated multilayer MoS2
摘要：
我们在机械剥离的多层MoS $_2$上制备了离子栅场效应晶体管（iFET）。我们用Al $_2$ O $_3$封装薄片，只在边缘处留下器件沟道。通过在高于$\sim$ 330 K的温度下用Li基聚合物电解质对样品进行选通，诱导了在MoS $_2$晶格中稳定的Li $^+$嵌入，并且通过将器件猝灭到$\sim$ 300 K来固定掺杂状态。这种嵌入过程诱导出现异常的温度依赖性的薄层电阻和它的第一个衍生物，这通常与结构/电子/磁性相变。我们认为，这些异常的电阻率的MoS $_2$可以自然地解释为一个过渡到电荷密度波相诱导锂化的签名，根据最近的理论计算。
英文摘要：
We fabricate ion-gated field-effect transistors (iFET) on mechanically exfoliated multilayer MoS$_2$. We encapsulate the flake by Al$_2$O$_3$, leaving the device channel exposed at the edges only. A stable Li$^+$ intercalation in the MoS$_2$ lattice is induced by gating the samples with a Li-based polymeric electrolyte above $\sim$ 330 K and the doping state is fixed by quenching the device to $\sim$ 300 K. This intercalation process induces the emergence of anomalies in the temperature dependence of the sheet resistance and its first derivative, which are typically associated with structural/electronic/magnetic phase transitions. We suggest that these anomalies in the resistivity of MoS$_2$ can be naturally interpreted as the signature of a transition to a charge-density-wave phase induced by lithiation, in accordance with recent theoretical calculations.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
