BaZrS3, a prototypical chalcogenide perovskite, has been shown to possess a direct band gap, an exceptionally strong near band edge light absorption, and good carrier transport. Coupled with its great stability, non-toxicity with earth abundant elements, it is thus a promising candidate for thin film solar cells. However, its reported band gap in the range of 1.7-1.8 eV is larger than the optimal value required to reach the Shockley-Queisser limit of a single junction solar cell. Here we report the synthesis of Ba(Zr1-xTix)S3 perovskite compounds with a reduced band gap. It is found that Ti alloying is extremely effective in band gap reduction of BaZrS3: a mere 4 at% alloying decreases the band gap from 1.78 to 1.51 eV, resulting in a theoretical maximum power conversion efficiency of 32%. Higher Ti-alloying concentration is found to destabilize the distorted chalcogenide perovskite phase.
Alloying is a powerful tool for tuning materials that facilitates the targeted design of desirable properties for a variety of applications. In this work, we provide a comprehensive investigation of the synthetic accessibility and electronic properties of nine alkaline-earth chalcogenide anion alloys (CaS$_{1-x}$O$_x$, CaS$_{1-x}$Se$_x$, CaS$_{1-x}$Te$_x$, SrS$_{1-x}$O$_x$, SrS$_{1-x}$Se$_x$, SrS$_{1-x}$Te$_x$, MgS$_{1- x}$O$_x$, MgS$_{1-x}$Se$_x$, and MgS$_{1-x}$Te$_x$). We show that isostructural alloying within the rock salt structure is favored for all systems except MgS$_{1-x}$Te$_x$, whi…
Cu-based chalcogenides are promising materials for thin-film solar cells with more than 20% measured cell efficiency. Using first-principles calculations based on density functional theory, the optoelectronic properties of a group of Cu-based chalcogenides Cu$_2$-II-IV-VI$_4$ is studied. They are then screened with the aim of identifying potential absorber materials for photovoltaic applications. The spectroscopic limited maximum efficiency (SLME) introduced by Yu and Zunger is used as a metric for the screening. After constructing the current-voltage curve, the maximum spectroscopy dependent …
Chalcogenide perovskites have emerged as non-toxic and stable photovoltaic materials, acting as an alternative to lead halide hybrid perovskites having similar optoelectronic properties. In the present work, we report the electronic and optical properties of chalcogenide perovskites AZrS$_3$ (A=Ca, Sr, Ba) by using the density functional theory (DFT) and many-body perturbation theory (MBPT viz. G$_0$W$_0$ and BSE). This study includes excitonic analysis for the aforementioned systems. The exciton binding energy (E$_\textrm{B}$) is found to be larger than that of the halide perovskites, as the …
The prospects of scaling current photovoltaic technologies to terawatt levels remain uncertain. All-oxide photovoltaics could open rapidly scalable manufacturing routes, if only oxide materials with suitable electronic and optical properties were developed. A potential candidate material is tin monoxide (SnO), which has exceptional doping and transport properties among oxides, but suffers from a low adsorption coefficient due to its strongly indirect band gap. Here, we address this shortcoming of SnO by band-structure engineering through isovalent but heterostructural alloying with divalent ca…
Chalcogenide perovskites have received considerable interest in photovoltaic research community owing to their stability (thermal and aqueous), non-toxicity and lead free composition. However, to date a theoretical study mainly focusing on the excitonic and polaronic properties are not explored rigorously, due to its huge computational demand. Herein, we capture the excitonic and polaronic effects in a series of chalcogenide perovskites ABS$_3$ where A=Ba, Ca, Sr, and B=Hf, Sn by employing state-of-the art hybrid density functional theory and many body perturbative approaches viz. GW and BSE. …
ML-guided screening of chalcogenide perovskites as solar energy materials
International Iberian Nanotechnology Laboratory（伊比利亚纳米技术国际实验室）；Faculty of Engineering, University of Porto（波尔图大学工程学院）；Humboldt-Universität zu Berlin（柏林洪堡大学）
Chalcopyrite semiconductors are of considerable interest for application as absorber layers in thin-film photovoltaic cells. When growing films of these compounds, however, they are often found to contain CuAu- like domains, a metastable phase of chalcopyrite. It has been reported that for CuInS2, the presence of the CuAu-like phase improves the short circuit current of the chalcopyrite-based photovoltaic cell. We investigate the thermodynamic stability of both phases for a selected list of I-III-VI2 materials using a first-principles density functional theory approach. For the CuIn-VI2 compou…
We report the synthesis and characterization of a novel class of ionic semiconductor materials- inorganic chalcogenide perovskites. Several different compounds including BaZrS3, CaZrS3, SrTiS3 and SrZrS3 were synthesized by high temperature sulfurization of their oxide counterparts. Their crystal structures were identified by XRD and composition by EDX. UV-vis and photoluminescence measurements confirmed that they are direct gap semiconductors with band gap values consistent with theoretical predictions. By adopting an anion alloying approach, we demonstrate widely tunable band gap from 1.73 e…
Transition metal perovskite chalcogenides (TMPCs) are explored as stable, environmentally friendly semiconductors for solar energy conversion. They can be viewed as the inorganic alternatives to hybrid halide perovskites, and chalcogenide counterparts of perovskite oxides with desirable optoelectronic properties in the visible and infrared part of the electromagnetic spectrum. Past theoretical studies have predicted large absorption coefficient, desirable defect characteristics, and bulk photovoltaic effect in TMPCs. Despite recent progresses in polycrystalline synthesis and measurements of th…
Ternary chalcogenides have been of recent investigation for applications in photovoltaic and thermoelectric devices. We study the structural, electronic, optical, and thermoelectric properties of nine ternary chalcogenides, NaAX$_{2}$, where A represents pnictogens (As, Sb, and Te) and X represents chalcogens (S, Se, and Te). Calculations based on density functional theory yield the following results: (i) phonon dispersion curves predict three of the compounds, NaAsS$_{2}$, NaSbS$_{2}$, and NaSbSe$_{2}$, to be dynamically stable in the monoclinic, C2/c, structure, (ii) the layered atomistic co…
Bulk chalcogenide perovskite BaZrS3 (BZS), with a direct band gap in visible region, is an important photovoltaic material, albeit with limited applicability owing to its antiferroelectric (AF) nature. Presently, ferroelectric (FE) perovskite-based photovoltaics are attracting enormous attention for environmental stability and better energy conversion efficiency through enhanced charge separation, owing to loss of center of inversion symmetry. We report on antiferroelectric-ferroelectric (AF-FE) phases of BZS thin film, grown with chemical vapor deposition (CVD), using temperature-dependent Ra…
Post-Transition Metal Sn-Based Chalcogenide Perovskites: A Promising Lead-Free and Transition Metal Alternative for Stable, High-Performance Photovoltaics
Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent conductive oxides (TCOs) such as ITO and IGZO used in displays, carbides and nitrides used in power electronics, as well as emerging halides (e.g. CuI) and 2D electronic materials used in various optoelectronic devices. Chalcogen-based (S, Se, T…
Using a materials genome approach on the basis of the density functional theory, we have formulated a new class of inorganic electrolytes for fast diffusion of Li+ ions, through fine-tuning of lattice chemistry of anti-perovskite structures. Systematic modelling has been carried out to elaborate the structural stability and ion transportation characteristics in Li3AX based cubic anti-perovskite, through alloying on the chalcogen lattice site (A) and alternative occupancy of the halogen site (X). In addition to identifying effective ways for reduction of diffusion barriers for Li+ ions in anti-…
Discovery of high-performance materials remains one of the most active areas in photovoltaics (PV) research. Indirect band gap materials form the largest part of the semiconductor chemical space, but predicting their suitability for PV applications from first principles calculations remains challenging. Here we propose a computationally efficient method to account for phonon assisted absorption across the indirect band gap and use it to screen 127 experimentally known binary semiconductors for their potential as thin film PV absorbers. Using screening descriptors for absorption, carrier transp…
We present first-principles calculations of the quasiparticle band structures of four isostructural semiconducting metal chalcogenides A$_2$B$_3$ (with A = Sb, Bi and B = S, Se) of the stibnite family within the G$_0$W$_0$ approach. We perform extensive convergence tests and identify a sensitivity of the quasiparticle corrections to the structural parameters and to the semicore $d$ electrons. Our calculations indicate that all four chalcogenides exhibit direct band gaps, if we exclude some indirect transitions marginally below the direct gap. Relativistic spin-orbit effects are evaluated for t…
Antimony sulfide (Sb2S3) and selenide (Sb2Se3) are emerging earth-abundant absorbers for photovoltaic applications. Solar cell performance depends strongly on charge carrier transport properties but these remain poorly understood in Sb2X3. Here we report band-like transport in Sb2X3 by investigating the electron-lattice interaction and theoretical limits of carrier mobility using first-principles density functional theory and Boltzmann transport calculations. We demonstrate that transport in Sb2X3 is governed by large polarons with moderate Fröhlich coupling constants (~ 2), large polaron radi…
BaZrS3 is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct band gap of 1.7-1.8 eV, a very strong light-matter interaction, and a high chemical stability. However, many of the fundamental properties are unknown, hindering the ability to apply BaZrS3 for optoelectronics. Here we report the fabrication of BaZrS3 thin films, by sulfurization of oxide films deposited by pulsed laser deposition. We show that these films are n-type with carrier densities in the range of 10^19-10^20 cm…
The discovery of lead free all-inorganic alloyed double perovskites have revolutionized photovoltaic research, showing promising light emitting efficiency and its tunability. However, detailed studies regarding optical, exciton, polaron and transport properties remain unexplored. Here, we report a theoretical study on the variation of carrier-lattice interaction and optoelectronic properties of pristine as well as alloyed Cs$_2$AgInCl$_6$ double perovskites. We have employed many-body perturbation theory (G$_0$W$_0$@HSE06) and density functional perturbation theory (DFPT) to compute exciton bi…
My study is about Halide Perovskites (HaPs) and focuses the fundamental structural, chemical and dielectric properties of HaPs in reference to their PV-related properties. * I present my main research model: HaP single-crystals - their growth and characterization; * I start by exploring the bond nature of HaPs using Nanoindentation and Solid-State NMR techniques. * I explore the 'deformation potential' of the structure and show that its low and positive value in HaPs strongly suggests a pronounced 'defect tolerance'. * I explore the scattering mechanism of charges in the soft and highly polari…
Lead and tin-based chalcogenide semiconductors like PbTe or SnSe have long been known to exhibit an unusually low thermal conductivity that makes them very attractive thermoelectric materials. An apparently unrelated fact is that the excitonic bandgap in these materials increases with temperature, whereas for most semiconductors one observes the opposite trend. These two anomalous features are also seen in a very different class of photovoltaic materials, namely the halide-perovskites such as CsPbBr3. It has been previously proposed that emphanisis, a local symmetry-breaking phenomenon, is the…
In spite of intensive studies on the chalcogenides as conventional thermoelectrics, it remains a challenge to find a proper material with high electrical but low thermal conductivities. In this work, we introduced a new class of thermoelectrics, Ge-based inorganic halide perovskites \ce{CsGeX3} (X = I, Br, Cl), which were already known as a promising candidate for photovoltaic applications. By performing the lattice-dynamics calculations and solving the Boltzmann transport equation, we revealed that these perovskites have ultralow thermal conductivities below 0.18 W m$^{-1}$ K$^{-1}$ while ver…
Accelerating the experimental cycle for new materials development is vital for addressing the grand energy challenges of the 21st century. We fabricate and characterize 75 unique halide perovskite-inspired solution-based thin-film materials within a two-month period, with 87% exhibiting band gaps between 1.2 eV and 2.4 eV that are of interest for energy-harvesting applications. This increased throughput is enabled by streamlining experimental workflows, developing a set of precursors amenable to high-throughput synthesis, and developing machine-learning assisted diagnosis. We utilize a deep ne…
Perovskite solar cells have shown remarkable efficiencies beyond 22%, through organic and inorganic cation alloying. However, the role of alkali-metal cations is not well-understood. By using synchrotron-based nano-X-ray fluorescence and complementary measurements, we show that when adding RbI and/or CsI the halide distribution becomes homogenous. This homogenization translates into long-lived charge carrier decays, spatially homogenous carrier dynamics visualized by ultrafast microscopy, as well as improved photovoltaic device performance. We find that Rb and K phase-segregate in highly conce…
Anion Ordering and Phase Stability Govern Optical Band Gaps in BaZr(S,Se)3
Chalmers University of Technology（查尔姆斯理工大学）；Massachusetts Institute of Technology（麻省理工学院）；Northumbria University（诺森比亚大学）；University College London（伦敦大学学院）
The incompatibility between defect-tolerance and structural stability is a severe issue hindering the wide application of high-efficiency solar cells. Usually, covalent/polar semiconductors with prototype of Si/CdTe crystals exhibit great structural stability owing to their compactly composed tetrahedral building blocks, but present extremely poor defect-tolerance due to the similar electronegativity of component elements. On the contrary, ionic semiconductors, such as perovskite series, always exhibit benign electronic properties of intrinsic defects owing to the great disparity of electroneg…
The monolithic tandem integration of third-generation solar energy materials on silicon holds great promise for photoelectrochemistry and photovoltaics. However, this can be challenging when it involves high-temperature reactive processes, which would risk damaging the Si bottom cell. One such case is the high-temperature sulfurization/selenization in thin film chalcogenide solar cells, of which the kesterite Cu2ZnSnS4 (CZTS) is an example. Here, by using very thin (<10 nm) TiN-based diffusion barriers at the interface, with different composition and properties, we demonstrate on a device leve…
Solar cells with a heterojunction between colloidal CuInS$_2$ and ZnO nanocrystals are an innovative concept in solution-processed photovoltaics, but the conversion efficiency cannot compete yet with devices employing lead chalcogenide quantum dots. Here, we present a detailed study on the charge collection in CuInS$_2$/ZnO solar cells. An inverted device architecture was utilized, in which the ZnO played an additional role as optical spacer layer. Variations of the ZnO thickness were exploited to create different charge generation profiles within the light-harvesting CuInS$_2$ layer, which st…
