We modify the theory of nanoscale patterns produced by ion bombardment with concurrent impurity deposition to take into account the effect that the near-surface impurities have on the collision cascades. As the impurity concentration is increased, the resulting theory successively yields a flat surface, a rippled surface with its wavevector along the projected direction of ion incidence, and a rippled surface with its wavevector rotated by 90 degrees. Exactly the same morphological transitions were observed in recent experiments in which silicon was bombarded with an argon ion beam and gold was co-deposited [B.~Moon et al. arXiv:1601.02534 (2016)].
In this paper, oxidation of Cu during physical sputtering deposition in a high purity and low pressure Ar atmosphere without introducing O2 gas flow was studied systemically. It was found that various flexible Cu-based films could be obtained by simply adjusting deposition parameters. Electrical and optical testing results showed that the achieved pure Cu films and Cu+Cu2O composite films both presented an intriguing combination of metal and semiconductor characteristics. It is expected that such Cu-based films with a superior conductivity and a solar-window bandgap may have fascinating potent…
In this work, the authors fabricated Cu2O porous nanostructured films (PNFs) on glass slide substrates by the newly developed positive bias deposition approach in a balanced magnetron sputtering (MS) system. It was found that the surface morphology, crystal structure and optical property of the as-deposited products were greatly dependent on the applied positive substrate bias. In particular, when the substrate was biased at +50 V and +150 V, both of the as-prepared Cu2O PNFs exhibited a unique triangular pyramids-like structure with obvious edges and corners and little gluing, a preferred ori…
Epitaxial copper thin films were deposited by magnetron sputtering. The adatoms during deposition are influenced by deposition parameters which cause variations in thin film properties. XRD and FESEM studies were done to get an insight into the growth mechanisms of the films. A modeling has been done on the epitaxial thin film growth with sputtering process. The parameters during sputtering like, sputtering yield, pressure, temperature, current density, deposition time were related and an attempt has been made to analyze the sputtering process.
Atomic layer deposition (ALD) provides a promising approach for deposition of ultrathin low-defect-density tunnel barriers, and it has been implemented in a high-vacuum magnetron sputtering system for in situ deposition of ALD-Al2O3 tunnel barriers in superconductor-insulator-superconductor (SIS) Josephson junctions. A smooth ALD-Al2O3 barrier layer was grown on a Al-wetted Nb bottom electrode and was followed with a top Nb electrode growth using sputtering. Preliminary low temperature measurements of current-voltage characteristics (IVC) of the Josephson junctions made from these trilayers co…
In this paper we reported, to the best of our knowledge, the first deposition of highly oriented thin films (with thickness of about 90 nm) of NdCoO3 and Nd0.8Sr0.2CoO3 cobaltites on single-crystalline STO and LAO substrates. Our investigation has shown that highly oriented single phase thin films of NCO and NSCO can be successfully deposited by means of rf-sputtering if the substrates is heated at high temperatures (700C); lower substrate temperature has shown to lead to multi-phase materials with a low crystallinity degree . LAO substrate showed to give origin to a prefect match of the out-o…
An Automated Magnetron Sputtering Chamber for Ferroelectric Thin Film Deposition
Materials Research Institute, The Pennsylvania State University（宾夕法尼亚州立大学材料研究所）；Materials Science and Engineering, The Pennsylvania State University（宾夕法尼亚州立大学材料科学与工程系）
The investigations of the reactive magnetron depositing of the stoichiometric coatings metal-metalloid were done. The dependences between sputtering parameters of a target and processes of plasmochemical formation on the surface of sample metal-metalloid and formations of coatings of the appropriate structure were investigated. Experimental data on stoichiometric coatings AlN, Al2O3, TiN, TiO2 is given. Features of reactive magnetron deposition and investigation results for obtaining of coatings with pregiven properties in particular for providing stability and controllability of coating depos…
Phase-selective growth of water-soluble strontium aluminate via sputtering deposition for freestanding oxide membranes
TU Wien（维也纳工业大学）；Université Caen Normandie（诺曼底大学）；CEA（法国原子能和替代能源委员会）；ENSICAEN（恩西西安高等学院）；CNRS（法国国家科学研究中心）；CIMAP UMR6252（CIMAP联合研究实验室6252）；Catalan Institute of Nanoscience and Nanotechnology (ICN2)（加泰罗尼亚纳米科学和纳米技术研究所）；CSIC（西班牙国家研究委员会）；BIST（巴塞罗那科学与技术研究院）；University of Geneva（日内瓦大学）；Leibniz-Institut für Kristallzüchtung（莱布尼兹晶体生长研究所）；ALBA Synchrotron Light Source（阿尔巴同步辐射光源）
Optimized DC magnetron sputtering system for the deposition of transparent conductive oxides (TCOs), such indium tin oxide (ITO) on glass substrate has been applied in order to achieve low-emitting (low-e) transparent coatings. To obtain the concerned electrical resistance and high infrared reflection, first the effect of applied sputtering power then oxygen flow on the properties of films have been investigated. The other depositions parameters are kept constant. Film deposition at at temperature 400 degree of Celsius in oxygen flow of 3 Standard Cubic Centimeters per Minute results in transp…
Copper deposition has been carried out at various time span on glass slide and silicon substrate by using indigenously developed unbalanced type DC magnetron sputtering system. The main objective of this work is to study the crystalline structure of the deposited materials and also to calculate the crystallite grain size. As a transition metal, Copper nano-particles and structures have several utilities in the field of photo-catalytic and sensor applications. Such structures are utilized to provide free electrons that enhance optical and electrical properties of the photo-catalytic sensor mate…
Metal hydrides have earlier been suggested for utilization in solar cells. With this as a motivation we have prepared thin films of yttrium hydride by reactive magnetron sputter deposition. The resulting films are metallic for low partial pressure of hydrogen during the deposition, and black or yellow-transparent for higher partial pressure of hydrogen. Both metallic and semiconducting transparent YHx films have been prepared directly in-situ without the need of capping layers and post-deposition hydrogenation. Optically the films are similar to what is found for YHx films prepared by other te…
Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barrier using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal elec…
Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully …
The article consists of four sections all dealing with the computational modeling of the sputtering process. The first section deals with the difference in Bismuth atomic layer deposition at different polar angle and ion flounce. In the second section, atomic layer deposition was studied as a function of incident Argon ion energy at different pressure conditions. A curve analogous to Bragg curve was obtained .In the third section TiOx films was developed by simulations. The sputtering parameters were varied to get different atomic layers. The variation of coverage with sticking coefficient was…
The objective of this work was to study the RF sputtering process parameters optimisation for deposition of Silicon Nitride thin films. The process parameters chosen to be varied were deposition power, deposition duration, flow rate of argon and flow rate of nitrogen. The parameters were varied at three levels according to Taguchi L9 orthogonal array. Surface topology, film composition, coating thickness, coating resistivity and refractive index were determined using SEM, XRD, profilometer, Semiconductor device analyser and UV spectrometer respectively. The measured film thickness values range…
Al2O3 thin films have been deposited at substrate temperatures between 500°C to 600°C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films were characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). The film structure being amorphous, nanocrystalline, or crystalline was correlated with characteristic ion energy distributions. The evolving crystalline structure is connected with different levels of displacements per atom (dpa) in the growing film as being derived from…
Deposits of one-dimensional nanostructures of zinc with diameters of 90-120 nm have been obtained by means of sputtering in an Electron Cyclotron Resonance (ECR) plasma reactor. The sputtering has been made effective by using a negatively biased cylindrical target in a hollow cathode geometry. The nanocrystalline films deposited on the glass substrate were studied with scanning tunneling microscopy/spectroscopy and was found to consist of nanowires having metallic nature. The crystalline nature of these metallic nanowires was studied with x-ray diffraction analysis.
Reactive pulsed direct current magnetron sputtering deposition of semiconducting yttrium oxide thin film in ultralow oxygen atmosphere: A spectroscopic and structural investigation of growth dynamics
This paper reports on the deposition of amorphous and crystalline thin films of Ga2O3 by reactive pulsed direct current magnetron sputtering from a liquid gallium target onto fused (f-) quartz and c plane (c-) sapphire substrates, where the temperature of the substrate is varied from room temperature (RT) to 800°C. The deposition rate (up to 37 nm/min at RT on f-quartz and 5 nm/min at 800°C on c-sapphire) is two to five times higher than the data given in the literature for radio frequency sputtering. Deposited onto unheated substrates, the films are X-ray amorphous. Well-defined X-ray diffrac…
TiZrV film is mainly applied in the ultra-high vacuum pipe of storage ring. Thin film coatings of palladium which was added onto the TiZrV film to increase the service life of nonevaporable getters and enhance pumping speed for H2, was deposited on the inner face of stainless steel pipes by dc magnetron sputtering using argon gas as the sputtering gas. The TiZrV-Pd film properties were investigated by atomic force microscope (AFM), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and X-Ray Diffraction (XRD). The grain size of TiZrV and Pd film were about 0.42~1.3 nm a…
The step-wise growth of epitaxial Fe on Cu(001)/Si(001), investigated by in-situ polarized neutron reflectometry is presented. A sputter deposition system was integrated into the neutron reflectometer AMOR at the Swiss neutron spallation source SINQ, which enables the analysis of the microstructure and magnetic moments during all deposition steps of the Fe layer. We report on the progressive evolution of the accessible parameters describing the microstructure and the magnetic properties of the Fe film, which reproduce known features and extend our knowledge on the behavior of ultrathin iron fi…
Solution-based methods represent the most widespread approach used to deposit hybrid organic-inorganic perovskite films for low-cost but efficient solar cells. However, solution-process techniques offer limited control over film morphology and crystallinity, and most importantly do not allow sequential film deposition to produce perovskite-perovskite heterostructures. Here the successful deposition of CH3NH3PbI3 (MAPI) thin films by RF-magnetron sputtering is reported, an industry-tested method to grow large area devices with precisely controlled stoichiometry. MAPI films are grown starting fr…
Effect of independent parameters on nanoparticle sizes in magnetron-sputtering inert-gas condensation
Guangdong Technion – Israel Institute of Technology（广东以色列理工学院）；Technion – Israel Institute of Technology（以色列理工学院）；Grand Technion Energy Program (GTEP), Technion – Israel Institute of Technology（以色列理工学院大技术能源计划（GTEP））；Israel National Institute of Energy Storage (INIES), Technion – Israel Institute of Technology（以色列理工学院以色列国家储能研究所（INIES））；Guangdong Provincial Key Laboratory of Materials and Technologies for Energy Conversion, Guangdong Technion – Israel Institute of Technology（广东以色列理工学院广东省能源转换材料与技术重点实验室）；Instituto Regional de Investigación Científica Aplicada (IRICA) and Departamento de Física, Universidad de Castilla-La Mancha（卡斯蒂利亚-拉曼查大学区域应用科学研究所以及物理系）
Sputtering of PbTe crystals by Ar plasma with ion energies 50-550 eV is investigated. A dependence of sputter yields of the Te and Pb on the sputtering ion energy and sputtering time is measured. New phenomena: aperiodical oscillations of Pb and Te sputtering; a huge preference of Te sputtering reaching more than two orders of magnitude at the beginning of sputtering process; and a significant excess of Te integrated sputter yield over that of Pb for prolonged sputtering by low energy plasma at 50-160 eV, are observed. It is substantiated that these phenomena can be caused by the peculiarities…
A transfer-rod-mounted rotatable sample holder enabling a compact modular vacuum system for ion-beam milling, oblique magnetron sputtering, and co-sputtering
We explore the effect of ionization fraction on the epitaxial growth of Cu film on Cu (111) substrate at room temperature. We compare thermal evaporation, dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS). Three deposition conditions i.e. fully neutral, 50% ionized and 100% ionized flux were considered as thermal evaporation, dcMS and HiPIMS, respectively, for ~20000 adatoms. It is shown that higher ionization fraction of the deposition flux leads to smoother surfaces by two major mechanisms i.e. decreasing clustering in the vapor phase and bi-collision of hig…
We report on the transition between two regimes from several-atom clusters to much larger nanoparticles in Ar magnetron sputter deposition of WSi2, and the effect of nanoparticles on the properties of amorphous thin films and multilayers. Sputter deposition of thin films is monitored by in situ x-ray scattering, including x-ray reflectivity and grazing incidence small angle x-ray scattering. The results show an abrupt transition at an Ar background pressure Pc; the transition is associated with the threshold for energetic particle thermalization, which is known to scale as the product of the A…
Self-organized pattern formation by the process of reverse epitaxial growth has been investigated on GaAs (001) surfaces during 1 keV Ar+ bombardment at target temperature of 450 degC for a wide range of incident angles. Highly ordered ripple formation driven by diffusion instability is evidenced at near normal incidence angles. Concurrent sample rotation shows that the ripple morphology and its orientation do not depend on the incident beam direction; rather they are determined by the symmetry of the crystal face.
On Tailoring Structural and Optoelectronic Properties of TiO2 Thin Films Synthesized via 'Room' Temperature High Power Impulse Magnetron Sputtering (HiPIMS)
Agent-authored deposition recipes for X-ray multilayer mirrors: schema-bound LLM control of a magnetron sputtering system with reflectivity-verified outcomes
ZJU-UIUC Institute, Zhejiang University（浙江大学中乌联合研究院）；Department of Mechanical Science and Engineering, University of Illinois Urbana-Champaign（伊利诺伊大学厄巴纳-香槟分校机械科学与工程系）；School of Materials Science & Engineering, Zhejiang University（浙江大学材料科学与工程学院）；School of Mechanical and Electrical Engineering, Liuzhou Polytechnic University（柳州职业技术大学机电工程学院）；SVAC, Zhejiang Saiweike Optoelectronics Technology Co.（浙江赛微科光电科技有限公司）
We report on an XPS study of AlN thin films grown on Si(100) substrates by ion beam sputter deposition (IBSD) in reactive assistance of N+/N2+ ions to unravel the compositional variation of their surface when deposited at different substrate temperatures. The temperature of the substrate was varied as room temperature (RT), 100oC and 500oC. The binding energy of Al-2p, N-1s and O-1s core electrons indicate the formation of 2H polytypoid of AlN. The increase in concentration of AlN with substrate temperature during deposition is elucidated through detailed analysis with calculated elemental ato…
Achieving superconductivity in infinite-layer nickelate thin films by aluminum sputtering deposition
Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay（阿尔伯特·费尔特实验室，法国国家科学研究中心，泰雷兹集团，巴黎萨克雷大学）；Laboratoire de Physique des Solides, CNRS, Université Paris-Saclay（固体物理实验室，法国国家科学研究中心，巴黎萨克雷大学）；Synchrotron SOLEIL（索莱尔同步辐射中心）
Physics-separating artificial neural networks for predicting sputtering and thin film deposition of AlN in Ar/N$_2$ discharges on experimental timescales
Ruhr University Bochum（波鸿鲁尔大学）；Kiel University（基尔大学）
Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes.
Wafer-Scale Integration of Piezo- and Ferroelectric Al0.64Sc0.36N Thin Films by Reactive Sputtering
Silicon Austria Labs GmbH（硅奥地利实验室有限公司）；Evatec AG（伊瓦泰克股份公司）；STMicroelectronics（意法半导体）；Tandem Laboratory, Uppsala University（乌普萨拉大学双联实验室）；USound GmbH（优声有限公司）
Biaxially textured MgO templates have been successfully fabricated on several amorphous polymer films including Kapton tapes, polyimide, Poly(methyl methacrylate) (PMMA), and photoresist films using ion-beam-assisted-deposition (IBAD). With a Y2O3 buffer layer on polymer surfaces, roughening of the polymer surfaces due to preferential ion beam sputtering can be effectively reduced to meet the surface compatibility requirement for IBAD-MgO texturing. In-plane full-width-at-half-maximum (FWHM) of ~10.7 degrees and out-of-plane FWHM ~ 3.5 degrees have been obtained on homoepitaxial MgO films grow…
Cross contaminations are observed on sample surfaces by AES and XPS, if multiple samples are mounted on one sample holder and a neighbouring sample was sputter depth profiled. During sputter depth profiling sputtered material is deposited on inner surfaces of the instrument. In a secondary sputter process, which is due to species leaving the primary sputter target with higher kinetic energy, the previously deposited material is transported from the inner surfaces to the other samples mounted on the sample holder. This Reflective Sputtering is utilized to deposit ultra-thin layers on sample sur…
Magnetic tunnel junctions (MTJ) with AlOx barrier were fabricated by a deposition tool called Biased Target Ion Beam Deposition (BTIBD) using low energy ion source (0-50 eV) and voltage biased targets. The BTIBD system applies bias voltage directly and only on the desired targets, providing enough sputtering energy and avoiding "overspill" contamination during film deposition. The successful deposition of AlOx-MTJs demonstrated the capability of BTIBD to make multilayer structures with good film quality. MTJ thin film surface roughness and intermixing between layers are among the key problems …
In this work, the results of fabricating ultra thin VO$_2$ films on the technologically relevant amorphous SiO$_2$ surface using reactive DC magnetron sputtering are presented. Results indicate that a post deposition anneal in low partial pressures of oxygen is an effective way at stabilizing the VO$_2$(M$_{1}$) phase on the SiO$_2$ surface. VO$_2$ films with a thickness of 42nm show a continuous microstructure, and undergo a resistivity change of more than a factor of 200 as the temperature of the film increases above 72$^{o}C$. The film shows hysteresis in the metal-insulator transition temp…
Molecular dynamics simulations are often used to study sputtering and thin film growth. Compressive stresses in these thin films are generally assumed to be caused by a combination of forward sputtered (peened) built-in particles and entrapped working gas atoms. While the former are assumed to hold a predominant role, the effect of the latter on the interaction dynamics as well as thin film properties are scarcely clarified (concurrent or causative). The inherent overlay of the ion bombardment induced processes render an isolation of their contribution impracticable. In this work, this issue i…
Nanoporous thin-films are an important class of materials, offering a way to observe fundamental surface and bulk processes with particles larger than individual atoms, but small enough to interact significantly with each other through mechanisms such as stress and surface mobility. In-Situ X-ray Reflectivity and Grazing Incidence Small Angle X-Ray Scattering (GISAXS) were used to monitor thin-films grown from Tungsten Disilicide (WSi$_2$) and Copper (Cu) nanoclusters. The nanoclusters ranged in size from 2 nm to 6 nm diameter and were made by high-pressure magnetron sputtering via plasma-gas …
Morphology of metal thin layers deposited on polished surfaces of LiNbO$_3$ crystal with dissimilar electric charges has been studied using various methods of vacuum evaporation. The principal goal of the work is to optimizemethods of thin metal coating deposition applied to polar surfaces of LiNbO$_3$ crystal. The conducted research has demonstrated that Cr deposition on LiNbO$_3$ crystal faces is characterized by dissimilar polarity results in growth difference conditions of Cr films. The principal role here is played by the sign of the electric charge on the crystal surface along with the t…
