Sputter-Induced Cross-Contaminations in Analytical AES and XPS Instrumentation: Utilization of the effect for the In-situ Deposition of Ultrathin Functional Layers
Cross contaminations are observed on sample surfaces by AES and XPS, if multiple samples are mounted on one sample holder and a neighbouring sample was sputter depth profiled. During sputter depth profiling sputtered material is deposited on inner surfaces of the instrument. In a secondary sputter process, which is due to species leaving the primary sputter target with higher kinetic energy, the previously deposited material is transported from the inner surfaces to the other samples mounted on the sample holder. This Reflective Sputtering is utilized to deposit ultra-thin layers on sample surfaces for XPS binding energy referencing purpose and to build up ultra-thin conductive layers to enable AES measurements on insulating samples.
XPS studies on AlN thin films grown by ion beam sputtering in reactive assistance of N+/N2+ ions: Substrate temperature induced compositional variations
Wrinkling in Selected Polymer Thin Films Induced by Combined Ion Beam and Humidity Exposure
Boston University（波士顿大学）；Sabancı University（萨班哲大学）；Oregon State University（俄勒冈州立大学）；Massachusetts Institute of Technology（麻省理工学院）；Wentworth Institute of Technology（文特沃斯理工学院）
Time-resolved study of carbonization and growth of ultrathin 3C-SiC on Si(111) under ultra-high vacuum
Central European Institute of Technology, Brno University of Technology（中欧技术研究所，布尔诺理工大学）；Institute of Physical Engineering, Brno University of Technology（物理工程学院，布尔诺理工大学）
Temperature-Dependent Dielectric Function of Tantalum Nitride Formed by Atomic Layer Deposition for Tunnel Barriers in Josephson Junctions
NY Creates（纽约创想）；Department of Physics, New Mexico State University（新墨西哥州立大学物理系）；Center for Functional Nanomaterials, Brookhaven National Laboratory（布鲁克海文国家实验室功能纳米材料中心）
