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arXiv 1502.01715cond-mat.mtrl-scicond-mat.other
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GeMnTe铁磁半导体磁各向异性能的DFT计算

DFT calculations of magnetic anisotropy energy for GeMnTe ferromagnetic semiconductor

A. Łusakowski, P. Bogusławski, T. Story

摘要:

利用完全相对论赝势的OpenMX软件包,对稀磁半导体GeMnTe的磁各向异性能进行了密度泛函理论计算.给出了空穴浓度和磁性离子邻域对磁各向异性能的影响。分析了磁各向异性的微观机制,特别讨论了自旋轨道耦合、自旋极化和电子密度的空间变化在磁各向异性中的作用。计算结果与GeMnTe(111)菱面体薄膜垂直磁各向异性的实验观察相一致。

英文摘要:

Density functional theory (DFT) calculations of the energy of magnetic anisotropy for diluted ferromagnetic semiconductor GeMnTe were performed using using OpenMX package with fully relativistic pseudopotentials. The influence of hole concentration and magnetic ion neighborhood on magnetic anisotropy energy is presented. Analysis of microscopic mechanism of magnetic anisotropy is provided, in particular the role of spin-orbit coupling, spin polarization and spatial changes of electron density are discussed. The calculations are in accordance with the experimental observation of perpendicular magnetic anisotropy in rhombohedral GeMnTe (111) thin layers.

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