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arXiv 1105.0175cond-mat.mtrl-scicond-mat.mes-hall
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通过拉曼光谱在不同激发能下量化石墨烯中的缺陷

Quantifying defects in graphene via Raman spectroscopy at different excitation energies

L. G. Cançado, A. Jorio, E. H. Martins Ferreira, F. Stavale, C. A. Achete, R. B. Capaz, M. V. O. Moutinho, A. Lombardo, T. Kulmala, A. C. Ferrari

摘要:

我们提出了一个拉曼光谱研究的Ar(+)轰击石墨烯样品随着离子剂量的增加。这使我们能够控制、增加缺陷量。我们发现,对于一个给定的缺陷密度的D和G峰强度之间的比例强烈依赖于激光激发能。我们量化了这种效应,并提出了一个简单的方程,通过拉曼光谱的任何可见的激发能的点缺陷密度的测定。我们注意到,对于所有激发,D与G强度比在~ 3 nm的缺陷间距离处达到最大值。因此,给定的比率可以对应于高于或低于最大值的两个不同的缺陷密度。G峰宽及其色散与激发能的分析解决了这种模糊性。

英文摘要:

We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities for a given defect density strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an inter-defect distance ~3nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity.

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