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arXiv 2301.09359cond-mat.mes-hallcond-mat.mtrl-sci
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石墨烯中拉曼散射量子干涉路径的控制

Control of Raman scattering quantum interference pathways in graphene

Xue Chen, Sven Reichardt, Miao-Ling Lin, Yu-Chen Leng, Yan Lu, Heng Wu, Rui Mei, Ludger Wirtz, Xin Zhang, Andrea C. Ferrari, Ping-Heng Tan

摘要:

石墨烯是通过调节掺杂或激光激发能来研究量子干涉路径相干性的理想平台。后者产生的拉曼激发分布,提供了直接洞察到中间电子激发的寿命,因此,量子干涉,这至今仍然难以捉摸。在这里,我们通过调节掺杂至1.05eV的石墨烯中的激光激发能来控制拉曼散射路径,高于静电掺杂可实现的能量。G模的拉曼激发曲线表明其位置和半峰全宽与掺杂成线性关系。掺杂增强的电子-电子相互作用主导拉曼散射路径的寿命,并减少拉曼干扰。这为在掺杂石墨烯、纳米管和拓扑绝缘体中设计量子通路铺平了道路。

英文摘要:

Graphene is an ideal platform to study the coherence of quantum interference pathways by tuning doping or laser excitation energy. The latter produces a Raman excitation profile that provides direct insight into the lifetimes of intermediate electronic excitations and, therefore, on quantum interference, which has so far remained elusive. Here, we control the Raman scattering pathways by tuning the laser excitation energy in graphene doped up to 1.05eV, above what achievable with electrostatic doping. The Raman excitation profile of the G mode indicates its position and full width at half maximum are linearly dependent on doping. Doping-enhanced electron-electron interactions dominate the lifetime of Raman scattering pathways, and reduce Raman interference. This paves the way for engineering quantum pathways in doped graphene, nanotubes and topological insulators.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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