arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1411.7840cond-mat.mes-hallcond-mat.mtrl-sci
收藏

石墨烯中拉曼位移和热膨胀之间的相互作用:温度相关测量和衬底校正分析

Interplay between Raman shift and thermal expansion in graphene: temperature-dependent measurements and analysis of substrate corrections

S. Linas, Y. Magnin, B. Poinsot, O. Boisron, G. D. Forster, Z. Han, D. Kalita, V. Bouchiat, V. Martinez, R. Fulcrand, F. Tournus, V. Dupuis, F. Rabilloud, L. Bardotti, F. Calvo

摘要:

测量和计算已经显示出关于石墨烯$α(T)$的热膨胀系数(TEC)的符号和变化的显著不一致。在这里,我们报告了专门的拉曼散射实验进行的石墨烯单层沉积在氮化硅衬底上,在宽的温度范围150- 900 K。基于$α(T)$的各种理论候选者,分析了G带和石墨烯TEC的那些测量之间的关系,其涉及针对衬底的失配贡献校正测量信号。与准谐波近似的计算相反,石墨烯的多体势重新参数化正确地再现了实验数据。这些结果表明,在室温以上,TEC更可能是正的。

英文摘要:

Measurements and calculations have shown significant disagreement regarding the sign and variations of the thermal expansion coefficient (TEC) of graphene $α(T)$. Here we report dedicated Raman scattering experiments conducted for graphene monolayers deposited on silicon nitride substrates and over the broad temperature range 150--900~K. The relation between those measurements for the G band and the graphene TEC, which involves correcting the measured signal for the mismatch contribution of the substrate, is analyzed based on various theoretical candidates for $α(T)$. Contrary to calculations in the quasiharmonic approximation, a many-body potential reparametrized for graphene correctly reproduces experimental data. These results indicate that the TEC is more likely to be positive above room temperature.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑