In the present article we investigate the influence of the contact region on the distribution of the chemical potential in integer quantum Hall samples, as well as the longitudinal and Hall resistance as a function of the magnetic field. First we use a standard quantum Hall sample geometry and analyse the influence of the length of the leads where current enters/leaves the sample and the ratio of the contact width to the width of these leads. Furthermore we investigate potential barriers in the current injecting leads and the measurement arms in order to simulate non-ideal contacts. Second we simulate nonlocal quantum Hall samples with applied gating voltage at the metallic contacts. For such samples it has been found experimentally that both the longitudinal and Hall resistance as a function of the magnetic field can change significantly. Using the nonequilibrium network model we are able to reproduce most qualitative features of the experiments.
Ohmic contacts are crucial elements of electron optics that have not received a clear theoretical description yet. We propose a model of an Ohmic contact as a piece of metal of the finite capacitance $C$ attached to a quantum Hall edge. It is shown that charged quantum Hall edge states may have weak coupling to neutral excitations in an Ohmic contact. Consequently, despite being a reservoir of neutral excitations, an Ohmic contact is not able to efficiently equilibrate edge states if its temperature is smaller than $\hbarΩ_c$, where $Ω_c$ is the inverse RC time of the contact. This energy scal…
Anisotropic magneto resistances and intrinsic adiabatic transport features are generated on quantum Hall samples based on an (Al,Ga)As/GaAs heterostructure with alloyed Au/Ge/Ni contacts. We succeed to probe the microscopic origin of these transport features with a cryogenic scanning force microscope (SFM) by measuring the local potential distribution within the two-dimensional electron system (2DES). These local measurements reveal the presence of an incompressible strip in front of contacts with insulating properties depending on the orientation of the contact/2DES interface line relatively …
We demonstrated a method to probe local electronic states and energy relaxation in quantum Hall edge states utilizing quantum point contacts. We evaluated relaxation lengths in two cases; first, with electron tunneling, and second, only with energy exchange without tunneling between edge states. The results were consistent with previous experiments and validated our method with quantum point contacts. We applied this method to measure the energy relaxation length around a hotspot in quantum Hall regimes and revealed the possible short-distance relaxation process to be the relaxation due to ene…
We investigate transport in a gate-defined graphene quantum point contact in the quantum Hall regime. Edge states confined to the interface of p and n regions in the graphene sheet are controllably brought together from opposite sides of the sample and allowed to mix in this split-gate geometry. Among the expected quantum Hall features, an unexpected additional plateau at 0.5 h/e^2 is observed. We propose that chaotic mixing of edge channels gives rise to the extra plateau.
This paper reports on an experimental study of the contact resistance of Hall bars in the Quantum Hall Effect regime while increasing the current through the sample. These measurements involve also the longitudinal resistance and they have been always performed before the breakdown of the Quantum Hall Effect. Our investigations are restricted to the $i=2$ plateau which is used in all metrological measurements of the von Klitzing constant $R_K$. A particular care has been taken concerning the configuration of the measurement. Four configurations were used for each Hall bar by reversing the curr…
Hall and diagonal resistances of bilayer fractional quantum Hall systems are discussed theoretically. The bilayers have electrodes attached separately to each layer. They are assumed to be coupled weakly by interlayer tunneling, while the interlayer Coulomb interaction is negligibly small. It is shown that source-drain voltage dependence of the resistances reflects the Luttinger liquid parameter of the edge state.
Chiral integer quantum Hall (QH) edge modes are immune to backscattering and therefore are non-localized and show a vanishing longitudinal as well as non-local resistance along with quantized 2-terminal and Hall resistance even in the presence of sample disorder. However, this is not the case for contact disorder, which refers to the possibility that a contact can reflect edge modes either partially or fully. This paper shows that when all contacts are disordered in a N-terminal quantum Hall bar, then transport via chiral QH edge modes can have a significant localization correction. The Hall a…
Observations of electron-hole asymmetry in transport through graphene devices at high magnetic field challenge prevalent models of the graphene quantum Hall effect. Here, we study this asymmetry both in conventional magnetotransport and in scanning gate microscopy maps measured in an encapsulated graphene constriction. We reveal that the presence of upstream modes and local doping in the vicinity of electrical contacts leads to a totally different picture of topological breakdown for electrons and holes, explaining the observed asymmetry.
We study the tunneling current between edge states of quantum Hall liquids across a single long contact region, and predict a resonance at a bias voltage set by the scale of the edge velocity. For typical devices and edge velocities associated with charged modes, this resonance occurs outside the physically accessible bias domain. However, for edge states that are expected to support neutral modes, such as the $ν={2/3}$, and $ν={5/2}$ Pfaffian and anti-Pfaffian states, the neutral velocity can be orders of magnitude smaller than the charged mode and if so the resonance would be accessible. The…
We analyze charge-$e/4$ quasiparticle tunneling between the edges of a point contact in a non-Abelian model of the $ν=5/2$ quantum Hall state. We map this problem to resonant tunneling between attractive Luttinger liquids and use the time-dependent density-matrix renormalization group (DMRG) method to compute the current through the point contact in the presence of a {\it finite voltage difference} between the two edges. We confirm that, as the voltage is decreases, the system is broken into two pieces coupled by electron hopping. In the limits of small and large voltage, we recover the result…
We consider the possibility to extract spins that are generated by an electric current in a two-dimensional electron gas with Rashba-Dresselhaus spin-orbit interaction (R2DEG) in the Hall geometry. To this end, we discuss boundary conditions for the spin accumulations between a spin-orbit coupled region and contact without spin-orbit coupling, i.e. a normal two-dimensional electron gas (2DEG). We demonstrate that in contrast to contacts that extend along the whole sample, a spin accumulation can diffuse into the normal region through finite contacts and detected by e.g. ferromagnets. For an im…
A theory of transport in the quantum Hall regime is developed for separately contacted double-layer electron systems. Inter-layer tunneling provides a channel for equilibration of the distribution functions in the two layers at the edge states. Resistances and transresistances for various configurations of the electrodes are calculated as functions of the inter-layer tunneling amplitude. Induced current in one of the layer by a current in the other is calculated also. It is shown that reflection at the leads causes change in the results for some electrode configurations. The results obtained i…
Using an innovative combination of a quasi-Corbino sample geometry and the cross-gate technique, we have developed a method that enables us to separately contact single edge channels in the quantum Hall regime and investigate equilibration among them. Performing 4-point resistance measurements, we directly obtain information on the energetic and geometric structure of the edge region and the equilibration-length for current transport across the Landau- as well as the spin-gap. Based on an almost free choice in the number of participating edge channels and their interaction-length a systematic …
The effects of contact geometry and ideality on InGaAs and Si nano-scale n-channel FinFET performance are studied using a quantum-corrected semi-classical Monte Carlo method. Illustrative end, saddle/slot, and raised source/drain contacts were modeled, and with ideal transmissivity and reduced transmissivity more consistent with experimental contact resistivities. Far-from-equilibrium degenerate statistics, quantum-confinement effects on carrier distributions in real-space and among energy valleys, quasi-ballistic transport inaccessible through drift-diffusion and hydrodynamic simulations, and…
The integer and fractional quantum Hall states are known to break down at high dc bias, exhibiting deviation from the ideal incompressible behavior. We measure breakdown of the ν= 2, 3, 4, 5 integer and the ν= 4/3 and 5/3 fractional states in a quantum point contact (QPC) of lithographic width ~600 nm. Dependence of the critical current on magnetic field, QPC gate voltage, and QPC width are presented. Of particular interest, the critical current of the 4/3 and 5/3 fractional states shows the opposite dependence on QPC width compared to the integer states. This previously unobserved result is n…
It is well known that quantum spin Hall (QSH) edge modes being helical are immune to backscattering due to non-magnetic disorder within the sample. Thus, quantum spin Hall edge modes are non-localized and show a vanishing Hall resistance along with quantized 2-terminal, longitudinal and non-local resistances even in presence of sample disorder. However, this is not the case for contact disorder. This paper shows that when all contacts are disordered in an N-terminal quantum spin Hall sample, then transport via these helical QSH edge modes can have a significant localization correction. All the…
Non-abelian quantum Hall states are characterized by the simultaneous appearance of charge and neutral gapless edge modes, with the structure of the latter being intricately related to the existence of bulk quasi-particle excitations obeying non-abelian statistics. In general, it is hard to probe the neutral modes in charge transport measurements and a thermal transport measurement seems to be inevitable. Here we propose a setup which can get around this problem by having two point contacts in series separated by a distance set by the thermal equilibration length of the charge mode. We show th…
Fendley, Ludwig and Saleur [Phys. Rev. B52 (1995) 8934] have obtained an expression for the non-equilibrium current through a constriction in the quantum Hall bar based on the Bethe ansatz technique and the Bolzmann equation. In this Comment we draw attention to a serious flaw in their derivation. We argue that their result is correct in the linear response limit but should be taken with a care out of equilibrium for finite bias. The reason is in the use of the equilibrium scattering matrix in the place of the transition probability amplitude out of equilibrium, the substitution which was not …
We study the transport mechanisms taking place in a quantum spin Hall bar with an embedded quantum dot, where electrons localize and experience Coulomb interaction U as well as spin-flip processes λ. We solve the problem with non-equilibrium Green functions. We focus on the linear response regime and treat the many-body interactions with quantum Monte Carlo. The effects of U and λ are competitive and the induced transport takes place through different channels. The two mechanisms can be switched by changing the occupation of the dot with a gate voltage.
This review presents experimental results on the inter-edge-state transport in the quantum Hall effect, mostly obtained in the regime of high imbalance. The application of a special geometry makes it possible to perform I-V spectroscopy between individual edge channels in both the integer and the fractional regime. This makes it possible to study in detail a number of physical effects such as the creation of topological defects in the integer quantum Hall effect and neutral collective modes excitation in fractional regime. The while many of the experimental findings are well explained within e…
We discuss the role of direct Coulomb interaction on the bulk insulator of the integer quantized Hall effect that bridges the topological insulators and the conductance quantization. We investigate the magneto-transport properties of a two-dimensional electron system in the bulk, numerically, utilizing the self-consistent Thomas-Fermi-Poisson screening theory. Topologically distorted Hall bars with and without potential fluctuations are considered that comprises two identical inner contacts. Although these contacts change the topology, we show that quantized Hall effect survives due to redistr…
We consider a model for an edge state of electronic systems in the quantum Hall regime with filling $ν=1$ and in the quantum spin Hall regime. In both cases the system is in contact with two reservoirs by tunneling at point contacts. Both systems are locally driven by applying an ac voltage in one of the contacts. By weakly coupling them to a third reservoir, the transport of the generated heat is studied in two different ways: i) when the third reservoir acts as a thermometer the local temperature is sensed, and ii) when the third reservoir acts as a voltage probe the time-dependent local vol…
In this work we implement the self-consistent Thomas-Fermi-Poisson approach to a homogeneous two dimensional electron system (2DES). We compute the electrostatic potential produced inside a semiconductor structure by a quantum-point-contact (QPC) placed at the surface of the semiconductor and biased with appropriate voltages. The model is based on a semi-analytical solution of the Laplace equation. Starting from the calculated confining potential, the self-consistent (screened) potential and the electron densities are calculated for finite temperature and magnetic field. We observe that there …
We study transport across a point contact separating two line junctions in a ν= 5/2 quantum Hall system. We analyze the effect of inter-edge Coulomb interactions between the chiral bosonic edge modes of the half-filled Landau level (assuming a Pfaffian wave function for the half-filled state) and of the two fully filled Landau levels. In the presence of inter-edge Coulomb interactions between all the six edges participating in the line junction, the stable fixed point corresponds to a point contact which is neither fully opaque nor fully transparent. Remarkably, this fixed point represents a s…
Recent theories suggest that the excitations of certain quantum Hall states may have exotic braiding statistics which could be used to build topological quantum gates. This has prompted an experimental push to study such states using confined geometries where the statistics can be tested. We study the transport properties of quantum point contacts (QPCs) fabricated on a GaAs/AlGaAs two dimensional electron gas that exhibits well-developed fractional quantum Hall effect, including at bulk filling fraction 5/2. We find that a plateau at effective QPC filling factor 5/2 is identifiable in point c…
We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.
The even-denominator states have attracted considerable attention owing to their possible applications in future quantum technologies. In this letter, we first report a 3/2 diagonal resistance, indicating the existence of a 3/2 state in a nanometer-sized triple-gated quantum point contact (QPC) fabricated on a high-mobility (not ultra-high-mobility) single-layer two-dimensional (2D) GaAs wafer. The center gate plays a crucial role in realizing the QPC's 3/2 state. Our observation of the 3/2 state using a conventional QPC device, which is a suitable building block for semiconductor quantum devi…
We investigate integer and fractional quantum Hall states in quantum point contacts (QPCs) of different geometries, defined in AlGaAs/GaAs heterostructures employing different doping and screening techniques. We find that, even in the highest mobility samples, interference and localization strongly influence the transport properties. We propose microscopic models for these effects, based on single- and many-electron physics. For integer quantum Hall states, transport is modulated due to the self-consistent formation of compressible regions of enhanced or reduced density in the incompressible r…
This note is about uniform, plane, singly connected, regular Hall-plates with an arbitrary number of contacts exposed to a uniform magnetic field of arbitrary strength. In practice, the regular symmetry is the most common one. If the Hall-plates are mapped conformally to the unit disk, regular symmetry means that all contacts are equally large and all contact spacings are equally large, yet the contact spacing may be different from the size of the contacts. The indefinite conductance matrices of such Hall-plates are circulant matrices, whose complex eigenvalues are computed in closed form.
Transmission through a quantum point contact (QPC) in the quantum Hall regime usually exhibits multiple resonances as a function of gate voltage and high nonlinearity in bias. Such behavior is unpredictable and changes sample by sample. Here, we report the observation of a sharp transition of the transmission through an open QPC at finite bias, which was observed consistently for all the tested QPCs. It is found that the bias dependence of the transition can be fitted to the Fermi-Dirac distribution function through universal scaling. The fitted temperature matches quite nicely to the electron…
To enable functional skyrmion based spintronic devices, the controllable generation and manipulation of skyrmions is essential. While the generation of skyrmions by using a magnetic geometrical constriction has already been demonstrated, this approach is difficult to combine with a subsequent controlled manipulation of skyrmions. The high efficiency of skyrmion generation from magnetic constrictions limits the useful current density, resulting in stochastic skyrmion motion, which may obscure topological phenomena such as the skyrmion Hall effect. In order to address this issue, we designed a n…
In this work, we calculate the electron and the current density distributions both at the edges and the bulk of a two dimensional electron system, focusing on ideal and non-ideal contacts. A three dimensional Poisson equation is solved self-consistently to obtain the potential profile in the absence of an external magnetic field considering a Hall bar defined both by gates (contacts) and etching (lateral confinement). In the presence of a perpendicular magnetic field, we obtain the spatial distribution of the incompressible strips, taking into account the electron-electron interactions within …
We study the effect of an ac drive on the current-voltage (I-V) characteristics of a tunnel junction between two fractional Quantum Hall fluids at filling $ν^{-1}$ an odd integer. Within the chiral Luttinger liquid model of edge states, the point contact dynamics is described by a driven damped quantum mechanical pendulum. In a semi-classical limit which ignores electron tunnelling, this model exhibits mode-locking, which corresponds to current plateaus in the I-V curve at integer multiples of $I= eω/2π$, with $ω$ the ac drive angular frequency. By analyzing the full quantum model at non-zero …
We report an investigation of quantum Hall induced currents by simultaneous measurements of their magnetic moment and their effect on the conductance of a quantum point contact (QPC). Features in the magnetic moment and QPC resistance are correlated at Landau-level filling factors nu=1, 2 and 4, which demonstrates the common origin of the effects. Temperature and non-linear sweep rate dependences are observed to be similar for the two effects. Furthermore, features in the noise of the induced currents, caused by breakdown of the quantum Hall effect, are observed to have clear correlations betw…
The Josephson tunneling through a 2D normal contact with the spin-orbit split conduction band has been studied in the diffusive regime. Linearized Usadel equations for triplet components of the pairing function revealed a striking similarity to the equations of spin diffusion driven by the electric field in normal metals. Consequently, we predict that the out-of-plane spin-Hall polarization accumulates towards lateral sample edges and the in-plane polarization is finite throughout the entire normal region. At the same time, the spin-Hall current is absent in the considered case of the stationa…
We report a procedure to determine the frequency-dependent conductance of quantum Hall structures in a broad frequency domain. The procedure is based on the combination of two known probeless methods -- acoustic spectroscopy and microwave spectroscopy. By using the acoustic spectroscopy, we study the low-frequency attenuation and phase shift of a surface acoustic wave in a piezoelectric crystal in the vicinity of the electron (hole) layer. The electronic contribution is resolved using its dependence on a transverse magnetic field. At high frequencies, we study the attenuation of an electromagn…
An experiment to probe spin-polarized currents in the quantum Hall regime is suggested that takes advantage of the large Zeeman-splitting in the paramagnetic diluted magnetic semiconductor zinc manganese selenide (Zn$_{1-x}$Mn$_x$Se). In the proposed experiment spin-polarized electrons are injected by ZnMnSe-contacts into a gallium arsenide (GaAs) two-dimensional electron gas (2DEG) arranged in a Hall bar geometry. We calculated the resulting Hall resistance for this experimental setup within the framework of the Landauer-Büttiker formalism. These calculations predict for 100% spininjection th…
We propose an experiment to probe the unconventional quantum statistics of quasi-particles in fractional quantum Hall states by measurement of current noise. The geometry we consider is that of a Hall bar where two quantum point contacts introduce two interfering amplitudes for back-scattering. Thermal fluctuations of the number of quasi-particles enclosed between the two point contacts introduce current noise, which reflects the statistics of the quasi-particles. We analyze abelian $ν=1/q$ states and the non-abelian $ν=5/2$ state.
In a recent experimental paper [1] a qualitative confirmation of the existence of upstream neutral modes at $ν= 2/3$ quantum Hall edge was reported. Using the chiral Luttinger liquid theory of quantum Hall edge we develop a quantitative model of the experiment [1]. A good quantitative agreement of our theory with the experimental data reinforces the conclusion of existence of the upstream neutral mode. Our model also enables us to extract important quantitative information about non-equilibrium processes in Ohmic and tunneling contacts from the experimental data. In particular, for $ν= 2/3$, w…
We report on the observation of quantum transport and interference in a graphene device that is attached with a pair of split gates to form an electrostatically-defined quantum point contact (QPC). In the low magnetic field regime, the resistance exhibited Fabry-Pérot (FP) resonances due to np'n (pn'p) cavities formed by the top gate. In the quantum Hall (QH) regime with a high magnetic field, the edge states governed the phenomena, presenting a unique condition where the edge channels of electrons and holes along a p-n junction acted as a solid-state analogue of a monochromatic light beam. We…
We present detailed experimental studies of the temperature dependence of the plateau conductance of GaAs quantum point contacts in the temperature range from 0.3 K to 10 K. Due to a strong lateral confinement produced by a shallow-etching technique we are able to observe the following unexpected feature: a linear temperature dependence of the measured mid-plateau conductance. We discuss an interpretation in terms of a temperature dependent, intrinsic series resistance, due to non-ballistic effects in the 2D-1D transition region. These results have been reproduced in several samples from diffe…
We show that multiple point contacts on a barrier separating two laterally coupled quantum Hall fluids induce Aharonov-Bohm (AB) oscillations in the tunneling conductance. These quantum coherence effects provide new evidence for the Luttinger liquid behavior of the edge states of quantum Hall fluids. For a two point contact, we identify coherent and incoherent regimes determined by the relative magnitude of their separation and the temperature. We analyze both regimes in the strong and weak tunneling amplitude limits as well as their temperature dependence. We find that the tunneling conductan…
In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from quantum statistical theory, which is validated by the quantum Landauer theory and first-principle calculations. The proposed model can well explain experimental results for samples of different types of graphene/semiconductor Schottky contact.
A comprehensive understanding of quantum Hall edge transmission, especially the hole-conjugate of a Laughlin state such as a $2/3$ state, is critical for advancing fundamental quantum Hall physics and enhancing the design of quantum Hall edge interferometry. In this study, we report a robust intermediate $2h/e^2$ resistance quantization in a quantum point contact (QPC) when the bulk is set at the fractional filling $2/3$ quantum Hall state. Our results suggest the occurrence of two equilibration processes. First, the co-propagating $1/3$ edges moving along a soft QPC arm confining potential fu…
We report the observation of counterflowing edge current in InAs quantum wells which leads to the breakdown of quantum Hall (QH) effects at high magnetic fields. Counterflowing edge channels arise from the Fermi-level pinning of InAs and the resultant sharp edge potential with downward bending. By measuring the counterflow conductance for varying edge lengths, we determine the effective number $\langle N_\text{C} \rangle$ of counterflowing modes and their equilibration length $λ_\text{eq}$ at bulk integer filling factor $ν= 1$--$4$. $λ_\text{eq}$ increased exponentially with magnetic field $B$…
We show that a 3-port interferometer, defined by quantum point contacts in a two-dimensional electron gas, and working in the quantum Hall regime, can implement different logic gates at each port depending on the energy of charge carriers and the operating conditions. In all cases the input logic states are encoded in the potentials applied on the quantum point contacts, while the output logic states are encoded in the values of the overall transmission coefficients at each port. In addition, the output of such compact configurations can be reprogrammed by combining two 3-port interferometers.
Quantum point contact devices are indispensable tools for probing the edge structure of the fractional quantum Hall (FQH) states. Recent observations of quantized conductance plateaus accompanied by shot noise in such devices, as well as suppression of Mach-Zehnder interference, call for theoretical explanations. In this paper, we develop a theory of FQH edge state transport through quantum point contacts, which allows for a generic Abelian edge structure and assumes strong equilibration between edge modes (incoherent transport regime). We find that conductance plateaus are found whenever the …
On the basis of the Chalker-Coddington network model, a numerical and analytical study is made of the statistics of point-contact conductances for systems in the integer quantum Hall regime. In the Hall plateau region the point-contact conductances reflect strong localization of the electrons, while near the plateau transition they exhibit strong mesoscopic fluctuations. By mapping the network model on a supersymmetric vertex model with GL(2|2) symmetry, and postulating a two-point correlator in keeping with the rules of conformal field theory, we derive an explicit expression for the distribu…
Heat transport in multiple quantum-Hall edge channels at Landau-level filling factor nu = 2, 4, and 8 is investigated with a quantum point contact as a heat generator and a quantum dot as a local thermometer. Heat distribution among the channels remains highly non-uniform, which can be understood with the plasmon eigenmodes of the multiple channels. The heat transport can be controlled with another quantum point contact as a quantized heat valve, as manifested by stepwise increases of heat current at the thermometer. This encourages developing integrated heat circuits with quantum-Hall edge ch…
We study nonequilibrium edge state transport in the fractional quantum Hall regime for states with one or several counter-propagating neutral modes. We consider a setup in which the neutral modes are heated by a hot spot, and where heat transported by the neutral modes causes a temperature difference between the upper and lower edges in a Hall bar. This temperature difference is probed by the excess noise it causes for scattering across a quantum point contact. We find that the excess noise in the quantum point contact provides evidence for counter-propagating neutral modes, and we calculate i…
The $ν= 2/3$ fractional quantum Hall state is the hole-conjugate state to the primary Laughlin $ν= 1/3$ state. We investigate transmission of edge states through quantum point contacts fabricated on a GaAs/AlGaAs heterostructure designed to have a sharp confining potential. When a small but finite bias is applied, we observe an intermediate conductance plateau with $G = 0.5 \frac{e^2}{h}$. This plateau is observed in multiple QPCs, and persists over a significant range of magnetic field, gate voltage, and source-drain bias, making it a robust feature. Using a simple model which considers scatt…
Electric-field-controlled charge transport is a key concept of modern computers, embodied namely in field effect transistors. The metallic gate voltage controls charge population, thus it is possible to define logical elements which are the key to computational processes. Here, we investigate a similar system defined by metallic gates inducing quasi-one-dimensional transport channels on a high-mobility electron system in the presence of a strong perpendicular magnetic field. Firstly, we solve the three-dimensional Poisson equation, self-consistently imposing relevant boundary conditions, and u…
We consider a quantum Hall (QH) region in contact with a superconductor (SC), i.e., a QH-SC junction. Due to successive Andreev reflections, the QH-SC interface hosts hybridized electron and hole edge states called chiral Andreev edge states (CAES). We theoretically study the transport properties of these CAES by using a microscopic, tight-binding model. We find that the transport properties strongly depend on the contact geometry and the value of the filling factor. We notice that it is necessary to add local barriers at the corners of the junction in order to reproduce such properties, when …
