We report an investigation of quantum Hall induced currents by simultaneous measurements of their magnetic moment and their effect on the conductance of a quantum point contact (QPC). Features in the magnetic moment and QPC resistance are correlated at Landau-level filling factors nu=1, 2 and 4, which demonstrates the common origin of the effects. Temperature and non-linear sweep rate dependences are observed to be similar for the two effects. Furthermore, features in the noise of the induced currents, caused by breakdown of the quantum Hall effect, are observed to have clear correlations between the two measurements. In contrast, there is a distinct difference in the way that the induced currents decay with time when the sweeping field halts at integer filling factor. We attribute this difference to the fact that, while both effects are sensitive to the magnitude of the induced current, the QPC resistance is also sensitive to the proximity of the current to the QPC split-gate. Although it is clearly demonstrated that induced currents affect the electrostatics of a QPC, the reverse effect, the QPC influencing the induced current, was not observed.
Anomalous Hall-like signals in platinum in contact with magnetic insulators are common observations that could be explained by either proximity magnetization or spin Hall magnetoresistance. In this work, longitudinal and transverse magnetoresistances are measured in a pure gold thin film on the ferrimagnetic insulator Y$_3$Fe$_5$O$_{12}$ (Yttrium Iron Garnet, YIG). We show that both the longitudinal and transverse magnetoresistances have quantitatively consistent scaling in YIG/Au and in a YIG/Pt reference system when applying the Spin Hall magnetoresistance framework. No contribution of an an…
We conducted a systematic angular dependence study of nonlinear magnetoresistance in NiFe/Pt bilayers at variable temperature and field using the Wheatstone bridge method. We successfully disentangled magnon magnetoresistance from other types of magnetoresistances based on their different temperature and field dependences. Both the spin Hall/anisotropic and magnon magnetoresistances contain sine phi and sine 3 phi components with phi the angle between current and magnetization, but they exhibit different field and temperature dependence. The competition between different types of magnetoresist…
We predict a magnetoresistance induced by the interfacial Rashba spin-orbit coupling in normal metal|ferromagnetic insulator bilayer. It depends on the angle between current and magnetization directions identically to the "spin Hall magnetoresistance" mechanism caused by a combined action of spin Hall and inverse spin Hall effects. Due to the identical phenomenology it is not obvious whether the magnetoresistance reported by Nakayama et al. is a bulk metal or interface effect. The interfacial Rashba induced magnetoresistance may be distinguished from the bulk metal spin Hall magnetoresistance …
We study the spin Hall magnetoresistance effect in ferrimagnet/normal metal bilayers, comparing the response in collinear and canted magnetic phases. In the collinear magnetic phase, in which the sublattice magnetic moments are all aligned along the same axis, we observe the conventional spin Hall magnetoresistance. In contrast, in the canted phase, the magnetoresistance changes sign. Using atomistic spin model calculations of the magnetic configuration, we show that the electric transport for the different magnetic phases can be rationalized considering the individual sublattice moment orient…
We report magnetoresistance for current flow through iron/topological insulator (Fe/TI) and Fe/evaporated-oxide/TI contacts when a magnetic field is used to initially orient the magnetic alignment of the incorporated ferromagnetic Fe bar, at temperatures ranging from 100 K to room temperature. This magnetoresistance is associated with the relative orientation of the Fe bar magnetization and spin-polarization of electrons moving on the surface of the TI with helical spin-momentum locking. The magnitude of the observed magnetoresistance is relatively large compared to that observed in prior work…
We predict a spin anomalous-Hall unidirectional magnetoresistance (AH-UMR) in conducting bilayers composed of a ferromagnetic layer and a nonmagnetic layer, which does $\textit{not}$ rely on the spin Hall effect in the normal metal layer$-$in stark contrast to the well-studied unidirectional spin-Hall magnetoresistance$-$but, instead, arises from the spin anomalous Hall effect in the ferromagnetic layer. Physically, it is the charge-spin conversion induced by the spin anomalous Hall effect that conspires with the structural inversion asymmetry to generate a net nonequilibrium spin density in t…
We study the temperature dependence of the spin Hall magnetoresistance (SMR) in yttrium iron garnet/platinum hybrid structures via magnetization orientation dependent magnetoresistance measurements. Our experiments show a decrease of the SMR magnitude with decreasing temperature. Using the sensitivity of the SMR to the spin transport properties of the normal metal, we interpret our data in terms of a decrease of the spin Hall angle in platinum from 0.11 at room temperature to 0.075 at 10K, while the spin diffusion length and the spin mixing conductance of the ferrimagnetic insulator/normal met…
We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/YIG) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is det…
We study the temperature dependence of spin Hall magnetoresistance (SMR) in antiferromagnetic insulator (AFI)/metal bilayer systems. We calculate the amplitude of the SMR signal by using a quantum Monte Carlo simulation and examine how the SMR depends on the amplitude of the spin, thickness of the AFI layer, and randomness of the exchange interactions. Our results for simple quantum spin models provide a useful starting point for understanding SMR measurements on atomic layers of magnetic compounds.
We show how a dc current can be generated in a Hall bar without applying a bias voltage. The Hall resistance $R_H$ that corresponds to this pumped current is quantized, just as in the usual integer quantum Hall effect (IQHE). In contrast with the IQHE, however, the longitudinal resistance $R_{xx}$ does not vanish on the plateaus, but equals the Hall resistance. We propose an experimental geometry to measure the pumped current and verify the predicted behavior of $R_H$ and $R_{xx}$.
In this work, the investigation of magnetic proximity effect was extended to Ta which has been reported to have a negative spin Hall angle. Magnetoresistance and Hall measurements for in-plane and out-of-plane applied magnetic field sweeps were carried out at room temperature. The size of the MR ratio observed (~10-5) and its magnetization direction dependence are similar to that reported in Pt/YIG, both of which can be explained by the spin Hall magnetoresistance theory. Additionally, a flip of magnetoresistance polarity is observed at 4 K in the temperature dependent measurements, which can …
Anisotropic magnetoresistance is the change tendency of resistance of a material on the mutual orientation of the electric current and the external magnetic field. Here, we report experimental observations in the Dirac semimetal Cd3As2 of giant anisotropic magnetoresistance and its transverse version, called the planar Hall effect. The relative anisotropic magnetoresistance is negative and up to -68% at 2 K and 10 T. The high anisotropy and the minus sign in this isotropic and nonmagnetic material are attributed to a field-dependent current along the magnetic field, which may be induced by the…
In ferromagnet/normal-metal bilayers, the sensitivity of the spin Hall magnetoresistance and the spin Nernst magnetothermopower to the boundary conditions at the interface is of central importance. In general, such boundary conditions can be substantially affected by current-induced spin polarizations. In order to quantify the role of the latter, we consider a Rashba two-dimensional electron gas with a ferromagnet attached to one side of the system. The geometry of such a system maximizes the effect of current-induced spin polarization on the boundary conditions, and the spin Hall magnetoresis…
We theoretically study the electron transport through a magnetic point contact (PC) with special attention to the effect of an atomic scale domain wall (DW). The spin precession of a conduction electron is forbidden in such an atomic scale DW and the sequence of quantized conductances depends on the relative orientation of magnetizations between left and right electrodes. The magnetoresistance is strongly enhanced for the narrow PC and oscillates with the conductance.
Recent experiments in ferromagnetic atomic-sized contacts have shown that the anisotropic magnetoresistance (AMR) is greatly enhanced and has an asymmetric angular dependence as compared with that of bulk samples. The origin of these effects is still under debate. In this work we present a theoretical analysis of the AMR in atomic contacts of the 3d ferromagnetic materials. Our results strongly suggest that the anomalous AMR stems from the reduced symmetry of the atomic contact geometries. We also present calculations supporting the idea that the pronounced voltage- and temperature dependence …
We present a theory of the spin Hall magnetoresistance (SMR) in multilayers made from an insulating ferromagnet F, such as yttrium iron garnet (YIG), and a normal metal N with spin-orbit interactions, such as platinum (Pt). The SMR is induced by the simultaneous action of spin Hall and inverse spin Hall effects and therefore a non-equilibrium proximity phenomenon. We compute the SMR in F$|$N and F$|$N$|$F layered systems, treating N by spin-diffusion theory with quantum mechanical boundary conditions at the interfaces in terms of the spin-mixing conductance. Our results explain the experimenta…
We report on the angular and field dependence of the magnetoresistance (MR) in bilayers of Pt/EuO_{1-x} thin films, measured in both in-plane and out-of-plane geometries at different temperatures (T). Presence of oxygen vacancies manifested by a metal-insulator transition as well as a high-T ferromagnet to paramagnet transition (T_P) were observed in the bilayers. The Anisotropic Magnetoresistance (AMR) could be extracted in the entire T-range, even above T_P, exhibiting two sign crossovers. We attribute its T-evolution to the rotation of easy axis direction from a high-T out-of-plane to a low…
We investigated spin Hall magnetoresistance in FeMn/Pt bilayers, which was found to be one order of magnitude larger than that of heavy metal and insulating ferromagnet or antiferromagnet bilayer systems, and comparable to that of NiFe/Pt bilayers. The spin Hall magnetoresistance shows a non-monotonic dependence on the thicknesses of both FeMn and Pt. The former can be accounted for by the thickness dependence of net magnetization in FeMn thin films, whereas the latter is mainly due to spin accumulation and diffusion in Pt. Through analysis of the Pt thickness dependence, the spin Hall angle, …
We perform electronic measurements of unidirectional spin Hall magnetoresistance (USMR) in a Permalloy/Pt bilayer, in conjunction with magneto-optical Brillouin light spectroscopy of spin current-driven magnon population. We show that the current dependence of USMR closely follows the dipolar magnon density, and that both dependencies exhibit the same scaling over a large temperature range of 80-400 K. These findings demonstrate a close relationship between spin current-driven magnon generation and USMR, and indicate that the latter is likely dominated by the dipolar magnons.
Transverse magnetoresistance in a ferromagnetic/nonmagnetic/ferromagnetic trilayer originated from charge-spin conversion by anomalous Hall effect is investigated theoretically. Solving the spin diffusion equation in bulk and using the spin-dependent Landauer formula at the ferromagnetic/nonmagnetic interface, an analytical formula of the transverse resistivity is obtained. The charge-spin conversion by the anomalous Hall effect contributes to the magnetoresistance in a manner proportional to the square of the spin anomalous Hall angle. The angular dependence of the magnetoresistance is basica…
In this paper, we report the observation of spin-orbit magnetoresistance (SOMR) in ferromagnetic metal/heavy metal/MgO system. We measure the magnetoresistance as the function of the thickness of heavy metal (HM) for CoFeB/HM/MgO and CoFeB/HM films where HM = Pt and Ta. Besides the conventional spin Hall magnetoresistance (SMR) peak, the evidence of the SOMR is indicated by another peak of the MR ratio when the thickness of HM is around 1 ~ 2 nm for CoFeB/HM/MgO films, which is absent for CoFeB/HM films. We speculate the SOMR observed in our experiment originates from the spin-orbit coupling a…
We present a theory of the spin Hall magnetoresistance of metals in contact with magnetic insulators. We express the spin-mixing conductances, which govern the phenomenology of the effect, in terms of the microscopic parameters of the interface and the spin-spin correlation functions of the local moments on the surface of the magnetic insulator. The magnetic field and temperature dependence of the spin-mixing conductances leads to a rich behaviour of the resistance due to an interplay between the Hanle effect and spin mixing at the interface. Our theory provides a useful tool for understanding…
We experimentally investigate and quantitatively analyze the spin Hall magnetoresistance effect in ferromagnetic insulator/platinum and ferromagnetic insulator/nonferromagnetic metal/platinum hybrid structures. For the ferromagnetic insulator we use either yttrium iron garnet, nickel ferrite or magnetite and for the nonferromagnet copper or gold. The spin Hall magnetoresistance effect is theoretically ascribed to the combined action of spin Hall and inverse spin Hall effect in the platinum metal top layer. It therefore should characteristically depend upon the orientation of the magnetization …
The large spin orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments at room temperature. However, memory or logic spin devices based upon such switching require a non-optimal three terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two terminal device geometry is now possible by exploiting the recent discovery of a unidirectional spin Hall magnetoresista…
We predict two spin-dependent transport phenomena in two-dimensional electron systems, which are induced by spatially fluctuating Rashba spin-orbit interaction. When the electron gas is magnetized, the random Rashba interaction leads to the anomalous Hall effect. An example of such a system is a narrow-gap magnetic semiconductor-based symmetric quantum well. We show that the anomalous Hall conductivity reveals a strongly nonlinear dependence on the magnetization, decreasing exponentially at large spin density. We also show that electron scattering from a fluctuating Rashba field in a two-dimen…
In a Dirac semimetal charges flow between two Weyl nodes when electric and magnetic fields (B||E) are parallel to each other manifesting interesting physical properties such as negative longitudinal magnetoresistance, planar Hall effect and anisotropic magnetoresistance. We observe a co-existence of weak antilocalization with large negative longitudinal magnetoresistance and an unusual Hall resistance with (B||E) configuration, at the conducting interface of LaVO$_3$ and KTaO$_3$. The depth of the conducting channel at the interface is estimated to be around 30 nm by using spectroscopy techniq…
We study the influence of the interface quality of Pt/Y$_3$Fe$_5$O$_{12}$(111) hybrids on their spin Hall magnetoresistance. This is achieved by exposing Y$_3$Fe$_5$O$_{12}$(111) single crystal substrates to different well-defined surface treatments prior to the Pt deposition. The quality of the Y$_3$Fe$_5$O$_{12}$(YIG) surface, the Pt/YIG interface and the Pt layer is monitored \textit{in-situ} by reflection high-energy electron diffraction and Auger electron spectroscopy as well as \textit{ex-situ} by atomic force microscopy and x-ray diffraction. To identify the impact of the different surf…
The magnetotransport properties of disordered ferromagnetic kagome layers are investigated numerically. We show that a large domain-wall magnetoresistance or negative magnetoresistance can be realized in kagome layered materials (e.g. Fe$_3$Sn$_2$, Co$_3$Sn$_2$S$_2$, and Mn$_3$Sn), which show the quantum anomalous Hall effect. The kagome layers show a strong magnetic anisotropy and a large magnetoresistance depending on their magnetic texture. These domain-wall magnetoresistances are expected to be robust against disorder and observed irrespective of the domain-wall thickness, in contrast to c…
We report magnetoresistance measurements on thin Pt bars grown on epitaxial (001) and (111) CoFe2O4 (CFO) ferrimagnetic insulating films. The results can be described in terms of the recently discovered spin Hall magnetoresistance (SMR). The magnitude of the SMR depends on the interface preparation conditions, being optimal when Pt/CFO samples are prepared in situ, in a single process. The spin-mixing interface conductance, the key parameter governing SMR and other relevant spin-dependent phenomena such as spin pumping or spin Seebeck effect, is found to be different depending on the crystallo…
The dynamic coupling between spin and charge currents in non-magnetic conductors is considered. As a consequence of this coupling, the spin dynamics is directly reflected in the electrical impedance of the sample, with a relevant frequency scale defined by spin relaxation and spin diffusion. This allows the observation of the electron spin resonance by purely electrical measurements.
Motivated by recent experimental work, we consider spin transport between a normal metal and a gapped quantum paramagnet. We model the latter as the magnonic Mott-insulating phase of an easy-plane ferromagnetic insulator. We evaluate the spin current mediated by the interface exchange coupling between the ferromagnet and the adjacent normal metal. For the strongly interacting magnons that we consider, this spin current gives rise to a spin Hall magnetoresistance that strongly depends on the magnitude of the magnetic field, rather than its direction. This Letter may motivate electrical detectio…
The spin Hall magnetoresistance (SMR) allows to investigate the magnetic textures of magnetically ordered insulators in heterostructures with normal metals by magnetotransport experiments. We here report the observation of the SMR in in-situ prepared ferromagnetic EuO/W thin film bilayers with magnetically and chemically well-defined interfaces. We characterize the magnetoresistance effects utilizing angle-dependent and field-dependent magnetotransport measurements as a function of temperature. Applying the established SMR model, we derive and quantify the real and imaginary parts of the compl…
Electrical resistivities can be different for charge currents travelling parallel or perpendicular to the magnetization in magnetically ordered conductors or semiconductors, resulting in the well-known planar Hall effect and anisotropic magnetoresistance. Here, we study the analogous anisotropic magnetotransport behavior for magnons in a magnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$. Electrical and thermal magnon injection, and electrical detection methods are used at room temperature with transverse and longitudinal geometries to measure the magnon planar Hall effect and anisotropic magnetoresis…
The discovery of graphene has ignited intensive investigation on two dimensional (2D) materials. Among them, transition metal dichalcogenide (TMDC), a typical representative, attracts much attention due to the excellent performance in field effect transistor (FET) related measurements and applications. Particularly, when TMDC eventually reaches few-layer dimension, a wide range of electronic and optical properties, in striking contrast to bulk samples, are detected. In this Letter, we synthesized single crystalline WS2 nanoflakes by physical vapor deposition (PVD) method and carried out a seri…
In bilayers consisting of a normal metal (N) with spin-orbit coupling and a ferromagnet (F), the combination of the spin-Hall effect, the spin-transfer torque, and the inverse spin-Hall effect gives a small correction to the in-plane conductivity of N, which is referred to as spin-Hall magnetoresistance (SMR). We here present a theory of the SMR and the associated off-diagonal conductivity corrections for frequencies up to the terahertz regime. We show that the SMR signal has pronounced singularities at the spin-wave frequencies of F, which identifies it as a potential tool for all-electric sp…
We develop a model of the nonlinear response to a DC electrical current of a two dimensional electron system(2DES) placed on a magnetic field. Based on the exact solution of the Schroedinger equation in arbitrarily strong electric and magnetic fields, and separating the relative and guiding center coordinates, a Kubo-like formula for the current is worked out as a response to the impurity scattering. Self-consistent expressions determine the longitudinal and Hall components of the electric field in terms of the DC current. The differential resistivity displays strong Hall field-induced oscilla…
Recent studies evidence the emergence of asymmetric electron transport in layered conductors owing to the interplay between electrical conductivity, magnetization, and the spin Hall or Rashba- Edelstein effects. Here, we investigate the unidirectional magnetoresistance (UMR) caused by the current-induced spin accumulation in Co/Pt and CoCr/Pt bilayers. We identify three competing mechanisms underpinning the resistance asymmetry, namely interface and bulk spin-dependent electron scattering and electron-magnon scattering. Our measurements provide a consistent description of the current, magnetic…
The momentum dependent splitting of spin-bands in an electronic system is known as the "Rashba effect". Systems with the "Rashba effect" possess a Dirac point in momentum space. An electron in a cyclotron orbit enclosing that Dirac point in the reciprocal space gains a "Berry phase". We report here the Shubnikov-de-Haas oscillations (SdH) at the conducting interface of EuO-KTaO$_3$ (KTO). Observed SdH oscillations suggest the presence of two Fermi surfaces. For both the Fermi surfaces, we have seen the presence of a non-trivial "Berry phase" suggesting that the surfaces enclose the "Dirac poin…
Orbital Hall conductivity and orbital diffusion length of Vanadium thin films by Hanle magnetoresistance
CIC NanoGUNE（纳米技术联合研究中心）；UPV-EHU（巴斯克地区国立大学）；Centro de Física de Materiales CSIC-UPV/EHU（材料物理中心）；IKERBASQUE, Basque Foundation for Science（伊克尔巴斯科奎，巴斯克科学基金会）
Van der Waals materials are a new platform to study two-dimensional systems, including magnetic order. Since the number of spins is relatively small, measuring the magnetization is challenging. Here we report spin Hall magnetoresistance (SMR) up to room temperature caused by the magnetic surface texture of exfoliated flakes of magnetic van der Waals materials. For the antiferromagnet FePS3 the SMR amounts to 0.1 % for an applied magnetic field of 7 T at 5 K which implies a substantial canting of the magnetic moments relative to the colinear antiferromagnetic order. The canting is substantial e…
We consider a microscopic theory for the spin Hall magnetoresistance (SMR). We generally formulate a spin conductance at an interface between a normal metal and a magnetic insulator in terms of spin susceptibilities. We reveal that SMR is composed of static and dynamic parts. The static part, which is almost independent of the temperature, originates from spin flip caused by an interfacial exchange coupling. However, the dynamic part, which is induced by the creation or annihilation of magnons, has an opposite sign from the static part. By the spin-wave approximation, we predict that the latte…
A quasiclassical theory of giant magnetoresistance in nanoscale point contacts between different ferromagnetic metals is developed. The contacts were sorted by three types of mutual positions of the conduction spin-subband bottoms which are shifted one against another by the exchange interaction. A model of linear domain wall has been used to account for the finite contact length. The magnetoresistance is plotted against the size of the nanocontact. In heterocontacts the magnetoresistance effect turned out to be not only negative, as usual, but can be positive as well. Relevance of the results…
Unidirectional spin Hall magnetoresistance (USMR) has been widely reported in the heavy metal / ferromagnet (HM/FM) bilayer systems. We observe the USMR in the Pt/α-Fe2O3 bilayers where the α-Fe2O3 is an antiferromagnetic (AFM) insulator. Systematic field and temperature dependent measurements confirm the magnonic origin of the USMR. The appearance of AFM-USMR is driven by the imbalance of creation and annihilation of AFM magnons by spin orbit torque due to thermal random field. However, unlike its ferromagnetic counterpart, theoretical modeling reveals that the USMR in Pt/α-Fe2O3 is determine…
We study the evolution of magnetoresistance with temperature in thin film bilayers consisting of platinum and the antiferromagnet Cr$_2$O$_3$ with its easy axis out of the plane. We vary the temperature from 20 - 60°C, close to the Néel temperature of Cr$_2$O$_3$ of approximately 37°C. The magnetoresistive response is recorded during rotations of the external magnetic field in three mutually orthogonal planes. A large magnetoresistance having a symmetry consistent with a positive spin Hall magnetoresistance is observed in the paramagnetic phase of the Cr$_2$O$_3$, which however vanishes when c…
The effective field torque of an yttrium-iron-garnet film on the spin accumulation in an attached Pt film is measured by the spin-Hall magnetoresistance (SMR). As a result, the magnetization direction of a ferromagnetic insulating layer can be measured electrically. Experimental transverse and longitudinal resistances are well described by the theoretical model of SMR in terms of the direct and inverse spin-Hall effect, for different Pt thicknesses [3, 4, 8 and 35nm]. Adopting a spin-Hall angle of Pt $θ_{SH}=0.08$, we obtain the spin diffusion length of Pt ($λ=1.1\pm0.3$nm) as well as the real…
The spin Hall magnetoresistance (SMR) effect arises from spin-transfer processes across the interface between a spin Hall active metal and an insulating magnet. While the SMR response of ferrimagnetic and antiferromagnetic insulators has been studied extensively, the SMR of a paramagnetic spin ensemble is not well established. Thus, we investigate herein the magnetoresistive response of as-deposited yttrium iron garnet/platinum thin film bilayers as a function of the orientation and the amplitude of an externally applied magnetic field. Structural and magnetic characterization show no evidence…
We present calculations of quantized conductance and magnetoresistance in nanosize point contacts between two ferromagnetic metals. When conductance is open for only one conduction electrons spin-projection, the magnitude of magnetoresistance is limited by the rate of conduction electron spin-reversal processes. For the case when both spin-channels contribute to the conductance we analyze the influence of the point contact cross-section asymmetry on the giant megnetoresistance. Recent experiments on magnetoresistance of magnetic point contacts are discussed in the framework of the developed th…
We study the magnetotransport in small hybrid junctions formed by high-mobility GaInAs/InP heterostructures coupled to superconducting (S) and normal metal (N) terminals. Highly transmissive superconducting contacts to a two-dimensional electron gas (2DEG) located in a GaInAs/InP heterostructure are realized by using a Au/NbN layer system. The magnetoresistance of the S/2DEG/N structures is studied as a function of dc bias current and temperature. At bias currents below a critical value, the resistance of the S/2DEG/N structures develops a strong oscillatory dependence on the magnetic field, w…
We report the experimental observation of spin-induced magnetoresistance in single-wall carbon nanotubes contacted with high-transparency ferromagnetic electrodes. In the linear regime the spin-induced magnetoresistance oscillates with gate voltage in quantitative agreement with calculations based on a Landauer-Buttiker model for independent electrons. Consistent with this interpretation, we find evidence for bias-induced oscillation in the spin-induced magnetoresistance signal on the scale of the level spacing in the nanotube. At higher bias, the spin-induced magnetoresistance disappears beca…
We report on the giant magnetoresistance (GMR) of multiwall carbon nanotubes with ultra small diameters. In particular, we consider the effect of the inter-wall interactions and the lead/nanotube coupling. Comparative studies have been performed to show that in the case when all walls are well coupled to the electrodes, the so-called inverse GMR can appear. The tendency towards a negative GMR depends on the inter-wall interaction and on the nanotube le ngth. If, however, the inner nanotubes are out of contact with one of the electrodes, the GMR remains positive even for relatively strong inter…
The quasiclassical theory of a nanosize point contacts (PC) between two ferromagnets is developed. The maximum available magnetoresistance values in PC are calculated for ballistic versus diffusive transport through the area of a contact. In the ballistic regime the magnetoresistance in excess of few hundreds percents is obtained for the iron-group ferromagnets. The necessary conditions for realization of so large magnetoresistance in PC, and the experimental results by Garcia et al are discussed
The occurrence of Spin-Hall Magnetoresistance (SMR) in platinum (Pt) on top of yttrium iron garnet (YIG) has been investigated, for both in-plane and out-of-plane applied magnetic fields and for different Pt thicknesses [3, 4, 8 and 35nm]. Our experiments show that the SMR signal directly depends on the in-plane and out-of-plane magnetization directions of the YIG. This confirms the theoretical description, where the SMR occurs due to the interplay of spin-orbit interaction in the Pt and spin-mixing at the YIG/Pt interface. Additionally, the sensitivity of the SMR and spin pumping signals on t…
We have studied the magnetoresistance of the quantum point contact fabricated on the high mobility two-dimensional electron gas (2DEG) exposed to microwave irradiation. The resistance reveals giant $B$-periodic oscillations with the relative amplitude $ΔR/R$ of up to $700$\% resulting from the propagation and interference of the edge magnetoplasmons (EMPs) in the sample. This giant photoconductance is attributed to the considerably large local electron density modulation in the vicinity of the point contact. We have also analyzed the oscillation periods $ΔB$ of the resistance oscillations and,…
We investigated the mean-free path effects on the magnetoresistance of ferromagnetic nanocontacts. For most combinations of parameters the magnetoresistance monotonously decreases with increasing the contact cross-section. However, for a certain choice of parameters the calculations show non-monotonous behavior of the magnetoresistance in the region in which the diameter of the contact becomes comparable with the mean-free path of electrons. We attribute this effect to different conduction regimes in the vicinity of the nanocontact: ballistic for electrons of one spin projection, and simultane…
When a three-dimensional (3D) ferromagnetic topological insulator thin film is magnetized out-of-plane, conduction ideally occurs through dissipationless, one-dimensional (1D) chiral states that are characterized by a quantized, zero-field Hall conductance. The recent realization of this phenomenon - the quantum anomalous Hall effect - provides a conceptually new platform for studies of edge-state transport, distinct from the more extensively studied integer and fractional quantum Hall effects that arise from Landau level formation. An important question arises in this context: how do these 1D…
We study the spin Hall magnetoresistance (SMR) and the magnon spin transport (MST) in Pt/Y3Fe5O12(YIG)-based devices with intentionally modified interfaces. Our measurements show that the surface treatment of the YIG film results in a slight enhancement of the spin-mixing conductance and an extraordinary increase in the efficiency of the spin-to-magnon excitations at room temperature. The surface of the YIG film develops a surface magnetic frustration at low temperatures, causing a sign change of the SMR and a dramatic suppression of the MST. Our results evidence that SMR and MST could be used…
We show that when bulk graphene breaks into n-type and p-type puddles, the in-plane resistivity becomes strongly field dependent in the presence of a perpendicular magnetic field, even if homoge- neous graphene has a field-independent resistivity. We calculate the longitudinal resistivity ρ_{xx} and Hall resistivity ρ_{xy} as a function of field for this system, using the effective-medium approximation. The conductivity tensors of the individual puddles are calculated using a Boltzmann approach suit- able for the band structure of graphene near the Dirac points. The resulting resistivity agree…
