The dynamic coupling between spin and charge currents in non-magnetic conductors is considered. As a consequence of this coupling, the spin dynamics is directly reflected in the electrical impedance of the sample, with a relevant frequency scale defined by spin relaxation and spin diffusion. This allows the observation of the electron spin resonance by purely electrical measurements.
The resistance of layered conductors with a multisheet Fermi surface (FS), in a high magnetic field, in the immediate vicinity of Lifshic's topological transition when the separate FS sheets are drown together by an external action, pressure in part (and eventual change of the FS connectivity) is studied theoretically. Analysis of magnetoresistance near topological transition is illustrated for the case of FS in the shape of lightly corrugated cylinder and two corrugated planes distributed with a repeated period in the pulse space. It yields, that as the FS plane sheets approach sufficiently t…
We develop a classical kinetic theory of magnetotransport of 2D electrons in narrow channels with partly diffusive boundary scattering and apply it to description of magnetoresistance measured in the temperature interval 4.2-30 K in long mesoscopic bars fabricated from high-purity GaAs quantum well structures. Both experiment and theory demonstrate a number of characteristic features in the longitudinal and Hall resistances caused by the size effect in two dimensions owing to the high ballisticity of the transport. In addition to the features described previously, we also reveal a change in th…
Recently a large negative longitudinal (parallel to the magnetic field) magnetoresistance was observed in Weyl and Dirac semimetals. It is believed to be related to the chiral anomaly associated with topological electron band structure of these materials. We show that in a certain range of parameters such a phenomenon can also exist in conventional centrosymmetric and time reversal conductors, lacking topological protection of the electron spectrum and the chiral anomaly. We also discuss the magnetic field enhancement of the longitudinal components of the thermal conductivity and thermoelectri…
We investigate the monotonic growth of longitudinal interlayer magnetoresistance $\bar{R}_{zz}(B_z) $, analytically and numerically in the self-consistent Born approximation. We show that in a weak magnetic field the monotonic part of $\bar{R}_{zz}(B_z)$ is almost constant and starts to grow only above the crossover field $B_{c}$, when the Landau levels (LL) become isolated, i.e. when the LL separation becomes greater than the LL broadening. In higher field $B_{z}>>B_{c}$, $\bar{R}_{zz}(B_{z}) \propto B_{z}^{1/2}$ in agreement with previous works.
Anomalous Hall-like signals in platinum in contact with magnetic insulators are common observations that could be explained by either proximity magnetization or spin Hall magnetoresistance. In this work, longitudinal and transverse magnetoresistances are measured in a pure gold thin film on the ferrimagnetic insulator Y$_3$Fe$_5$O$_{12}$ (Yttrium Iron Garnet, YIG). We show that both the longitudinal and transverse magnetoresistances have quantitatively consistent scaling in YIG/Au and in a YIG/Pt reference system when applying the Spin Hall magnetoresistance framework. No contribution of an an…
We conducted a systematic angular dependence study of nonlinear magnetoresistance in NiFe/Pt bilayers at variable temperature and field using the Wheatstone bridge method. We successfully disentangled magnon magnetoresistance from other types of magnetoresistances based on their different temperature and field dependences. Both the spin Hall/anisotropic and magnon magnetoresistances contain sine phi and sine 3 phi components with phi the angle between current and magnetization, but they exhibit different field and temperature dependence. The competition between different types of magnetoresist…
This is a theoretical review of the quantum Hall effect observed in quasi-one-dimensional organic conductors such as (TMTSF)2X. It is written for a book "Physics of Organic Superconductors and Conductors" to be published by Springer and edited by A. G. Lebed.
We predict a magnetoresistance induced by the interfacial Rashba spin-orbit coupling in normal metal|ferromagnetic insulator bilayer. It depends on the angle between current and magnetization directions identically to the "spin Hall magnetoresistance" mechanism caused by a combined action of spin Hall and inverse spin Hall effects. Due to the identical phenomenology it is not obvious whether the magnetoresistance reported by Nakayama et al. is a bulk metal or interface effect. The interfacial Rashba induced magnetoresistance may be distinguished from the bulk metal spin Hall magnetoresistance …
We study the spin Hall magnetoresistance effect in ferrimagnet/normal metal bilayers, comparing the response in collinear and canted magnetic phases. In the collinear magnetic phase, in which the sublattice magnetic moments are all aligned along the same axis, we observe the conventional spin Hall magnetoresistance. In contrast, in the canted phase, the magnetoresistance changes sign. Using atomistic spin model calculations of the magnetic configuration, we show that the electric transport for the different magnetic phases can be rationalized considering the individual sublattice moment orient…
We predict a spin anomalous-Hall unidirectional magnetoresistance (AH-UMR) in conducting bilayers composed of a ferromagnetic layer and a nonmagnetic layer, which does $\textit{not}$ rely on the spin Hall effect in the normal metal layer$-$in stark contrast to the well-studied unidirectional spin-Hall magnetoresistance$-$but, instead, arises from the spin anomalous Hall effect in the ferromagnetic layer. Physically, it is the charge-spin conversion induced by the spin anomalous Hall effect that conspires with the structural inversion asymmetry to generate a net nonequilibrium spin density in t…
We studied the insulator-quantum Hall conductor transition which separates the low-field insulator from the quantum Hall state of the filling factor $ν=4$ on a gated two-dimensional GaAs electron system containing self-assembled InAs quantum dots. To enter the $ν=4$ quantum Hall state directly from the low-field insulator, the two-dimensional system undergoes a crossover from the low-field localization to Landau quantization. The crossover, in fact, covers a wide range with respect to the magnetic field rather than only a small region near the critical point of the insulator-quantum Hall condu…
We study the temperature dependence of the spin Hall magnetoresistance (SMR) in yttrium iron garnet/platinum hybrid structures via magnetization orientation dependent magnetoresistance measurements. Our experiments show a decrease of the SMR magnitude with decreasing temperature. Using the sensitivity of the SMR to the spin transport properties of the normal metal, we interpret our data in terms of a decrease of the spin Hall angle in platinum from 0.11 at room temperature to 0.075 at 10K, while the spin diffusion length and the spin mixing conductance of the ferrimagnetic insulator/normal met…
We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/YIG) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is det…
We study the temperature dependence of spin Hall magnetoresistance (SMR) in antiferromagnetic insulator (AFI)/metal bilayer systems. We calculate the amplitude of the SMR signal by using a quantum Monte Carlo simulation and examine how the SMR depends on the amplitude of the spin, thickness of the AFI layer, and randomness of the exchange interactions. Our results for simple quantum spin models provide a useful starting point for understanding SMR measurements on atomic layers of magnetic compounds.
We show how a dc current can be generated in a Hall bar without applying a bias voltage. The Hall resistance $R_H$ that corresponds to this pumped current is quantized, just as in the usual integer quantum Hall effect (IQHE). In contrast with the IQHE, however, the longitudinal resistance $R_{xx}$ does not vanish on the plateaus, but equals the Hall resistance. We propose an experimental geometry to measure the pumped current and verify the predicted behavior of $R_H$ and $R_{xx}$.
In this work, the investigation of magnetic proximity effect was extended to Ta which has been reported to have a negative spin Hall angle. Magnetoresistance and Hall measurements for in-plane and out-of-plane applied magnetic field sweeps were carried out at room temperature. The size of the MR ratio observed (~10-5) and its magnetization direction dependence are similar to that reported in Pt/YIG, both of which can be explained by the spin Hall magnetoresistance theory. Additionally, a flip of magnetoresistance polarity is observed at 4 K in the temperature dependent measurements, which can …
Anisotropic magnetoresistance is the change tendency of resistance of a material on the mutual orientation of the electric current and the external magnetic field. Here, we report experimental observations in the Dirac semimetal Cd3As2 of giant anisotropic magnetoresistance and its transverse version, called the planar Hall effect. The relative anisotropic magnetoresistance is negative and up to -68% at 2 K and 10 T. The high anisotropy and the minus sign in this isotropic and nonmagnetic material are attributed to a field-dependent current along the magnetic field, which may be induced by the…
In ferromagnet/normal-metal bilayers, the sensitivity of the spin Hall magnetoresistance and the spin Nernst magnetothermopower to the boundary conditions at the interface is of central importance. In general, such boundary conditions can be substantially affected by current-induced spin polarizations. In order to quantify the role of the latter, we consider a Rashba two-dimensional electron gas with a ferromagnet attached to one side of the system. The geometry of such a system maximizes the effect of current-induced spin polarization on the boundary conditions, and the spin Hall magnetoresis…
We present a theory of the spin Hall magnetoresistance (SMR) in multilayers made from an insulating ferromagnet F, such as yttrium iron garnet (YIG), and a normal metal N with spin-orbit interactions, such as platinum (Pt). The SMR is induced by the simultaneous action of spin Hall and inverse spin Hall effects and therefore a non-equilibrium proximity phenomenon. We compute the SMR in F$|$N and F$|$N$|$F layered systems, treating N by spin-diffusion theory with quantum mechanical boundary conditions at the interfaces in terms of the spin-mixing conductance. Our results explain the experimenta…
We report on the angular and field dependence of the magnetoresistance (MR) in bilayers of Pt/EuO_{1-x} thin films, measured in both in-plane and out-of-plane geometries at different temperatures (T). Presence of oxygen vacancies manifested by a metal-insulator transition as well as a high-T ferromagnet to paramagnet transition (T_P) were observed in the bilayers. The Anisotropic Magnetoresistance (AMR) could be extracted in the entire T-range, even above T_P, exhibiting two sign crossovers. We attribute its T-evolution to the rotation of easy axis direction from a high-T out-of-plane to a low…
We investigated spin Hall magnetoresistance in FeMn/Pt bilayers, which was found to be one order of magnitude larger than that of heavy metal and insulating ferromagnet or antiferromagnet bilayer systems, and comparable to that of NiFe/Pt bilayers. The spin Hall magnetoresistance shows a non-monotonic dependence on the thicknesses of both FeMn and Pt. The former can be accounted for by the thickness dependence of net magnetization in FeMn thin films, whereas the latter is mainly due to spin accumulation and diffusion in Pt. Through analysis of the Pt thickness dependence, the spin Hall angle, …
We perform electronic measurements of unidirectional spin Hall magnetoresistance (USMR) in a Permalloy/Pt bilayer, in conjunction with magneto-optical Brillouin light spectroscopy of spin current-driven magnon population. We show that the current dependence of USMR closely follows the dipolar magnon density, and that both dependencies exhibit the same scaling over a large temperature range of 80-400 K. These findings demonstrate a close relationship between spin current-driven magnon generation and USMR, and indicate that the latter is likely dominated by the dipolar magnons.
Transverse magnetoresistance in a ferromagnetic/nonmagnetic/ferromagnetic trilayer originated from charge-spin conversion by anomalous Hall effect is investigated theoretically. Solving the spin diffusion equation in bulk and using the spin-dependent Landauer formula at the ferromagnetic/nonmagnetic interface, an analytical formula of the transverse resistivity is obtained. The charge-spin conversion by the anomalous Hall effect contributes to the magnetoresistance in a manner proportional to the square of the spin anomalous Hall angle. The angular dependence of the magnetoresistance is basica…
In this paper, we report the observation of spin-orbit magnetoresistance (SOMR) in ferromagnetic metal/heavy metal/MgO system. We measure the magnetoresistance as the function of the thickness of heavy metal (HM) for CoFeB/HM/MgO and CoFeB/HM films where HM = Pt and Ta. Besides the conventional spin Hall magnetoresistance (SMR) peak, the evidence of the SOMR is indicated by another peak of the MR ratio when the thickness of HM is around 1 ~ 2 nm for CoFeB/HM/MgO films, which is absent for CoFeB/HM films. We speculate the SOMR observed in our experiment originates from the spin-orbit coupling a…
We present a theory of the spin Hall magnetoresistance of metals in contact with magnetic insulators. We express the spin-mixing conductances, which govern the phenomenology of the effect, in terms of the microscopic parameters of the interface and the spin-spin correlation functions of the local moments on the surface of the magnetic insulator. The magnetic field and temperature dependence of the spin-mixing conductances leads to a rich behaviour of the resistance due to an interplay between the Hanle effect and spin mixing at the interface. Our theory provides a useful tool for understanding…
The ordinary Hall effect is driven by the Lorentz force, while its anomalous counterpart occurs in ferromagnets. Here we show that the Berry curvature monopole of non-magnetic 2D spin-3/2 holes leads to a novel Hall effect linear in an applied in-plane magnetic field B_x. There is no Lorentz force hence no ordinary Hall effect, while all disorder contributions vanish to leading order in B_x. This intrinsic phenomenon, which we term the anomalous planar Hall effect (APHE), provides a non-quantized footprint of topological transport directly accessible in p-type semiconductors.
We experimentally investigate and quantitatively analyze the spin Hall magnetoresistance effect in ferromagnetic insulator/platinum and ferromagnetic insulator/nonferromagnetic metal/platinum hybrid structures. For the ferromagnetic insulator we use either yttrium iron garnet, nickel ferrite or magnetite and for the nonferromagnet copper or gold. The spin Hall magnetoresistance effect is theoretically ascribed to the combined action of spin Hall and inverse spin Hall effect in the platinum metal top layer. It therefore should characteristically depend upon the orientation of the magnetization …
The large spin orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments at room temperature. However, memory or logic spin devices based upon such switching require a non-optimal three terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two terminal device geometry is now possible by exploiting the recent discovery of a unidirectional spin Hall magnetoresista…
We derive the effective action for a moving magnetic-field-induced spin-density wave (FISDW) in quasi-one-dimensional conductors at zero and nonzero temperatures by taking the functional integral over the electron field. The effective action consists of the (2+1)D Chern-Simons term and the (1+1)D chiral anomaly term, both written for a sum of the electromagnetic field and the chiral field associated with the FISDW phase. The calculated frequency dependence of Hall conductivity interpolates between the quantum Hall effect at low frequencies and zero Hall effect at high frequencies, where the co…
Different types of angular magnetoresistance oscillations in quasi-one-dimensional layered materials, such as organic conductors (TMTSF)2X, are explained in terms of Aharonov-Bohm interference in interlayer electron tunneling. A two-parameter pattern of oscillations for generic orientations of a magnetic field is visualized and compared with the experimental data. Connections with angular magnetoresistance oscillations in other layered materials are discussed.
We predict two spin-dependent transport phenomena in two-dimensional electron systems, which are induced by spatially fluctuating Rashba spin-orbit interaction. When the electron gas is magnetized, the random Rashba interaction leads to the anomalous Hall effect. An example of such a system is a narrow-gap magnetic semiconductor-based symmetric quantum well. We show that the anomalous Hall conductivity reveals a strongly nonlinear dependence on the magnetization, decreasing exponentially at large spin density. We also show that electron scattering from a fluctuating Rashba field in a two-dimen…
In a Dirac semimetal charges flow between two Weyl nodes when electric and magnetic fields (B||E) are parallel to each other manifesting interesting physical properties such as negative longitudinal magnetoresistance, planar Hall effect and anisotropic magnetoresistance. We observe a co-existence of weak antilocalization with large negative longitudinal magnetoresistance and an unusual Hall resistance with (B||E) configuration, at the conducting interface of LaVO$_3$ and KTaO$_3$. The depth of the conducting channel at the interface is estimated to be around 30 nm by using spectroscopy techniq…
We study the influence of the interface quality of Pt/Y$_3$Fe$_5$O$_{12}$(111) hybrids on their spin Hall magnetoresistance. This is achieved by exposing Y$_3$Fe$_5$O$_{12}$(111) single crystal substrates to different well-defined surface treatments prior to the Pt deposition. The quality of the Y$_3$Fe$_5$O$_{12}$(YIG) surface, the Pt/YIG interface and the Pt layer is monitored \textit{in-situ} by reflection high-energy electron diffraction and Auger electron spectroscopy as well as \textit{ex-situ} by atomic force microscopy and x-ray diffraction. To identify the impact of the different surf…
Squeezing of the quadratures of the electromagnetic field has been extensively studied in optics and microwaves. However, previous works focused on the generation of squeezed states in a low impedance ($Z_0 \approx 50 Ω$) environment. We report here on the demonstration of the squeezing of bosonic edge magnetoplasmon modes in a quantum Hall conductor whose characteristic impedance is set by the quantum of resistance ($R_K \approx 25 k Ω$), offering the possibility of an enhanced coupling to low-dimensional quantum conductors. By applying a combination of dc and ac drives to a quantum point con…
The magnetotransport properties of disordered ferromagnetic kagome layers are investigated numerically. We show that a large domain-wall magnetoresistance or negative magnetoresistance can be realized in kagome layered materials (e.g. Fe$_3$Sn$_2$, Co$_3$Sn$_2$S$_2$, and Mn$_3$Sn), which show the quantum anomalous Hall effect. The kagome layers show a strong magnetic anisotropy and a large magnetoresistance depending on their magnetic texture. These domain-wall magnetoresistances are expected to be robust against disorder and observed irrespective of the domain-wall thickness, in contrast to c…
We report magnetoresistance measurements on thin Pt bars grown on epitaxial (001) and (111) CoFe2O4 (CFO) ferrimagnetic insulating films. The results can be described in terms of the recently discovered spin Hall magnetoresistance (SMR). The magnitude of the SMR depends on the interface preparation conditions, being optimal when Pt/CFO samples are prepared in situ, in a single process. The spin-mixing interface conductance, the key parameter governing SMR and other relevant spin-dependent phenomena such as spin pumping or spin Seebeck effect, is found to be different depending on the crystallo…
Motivated by recent experimental work, we consider spin transport between a normal metal and a gapped quantum paramagnet. We model the latter as the magnonic Mott-insulating phase of an easy-plane ferromagnetic insulator. We evaluate the spin current mediated by the interface exchange coupling between the ferromagnet and the adjacent normal metal. For the strongly interacting magnons that we consider, this spin current gives rise to a spin Hall magnetoresistance that strongly depends on the magnitude of the magnetic field, rather than its direction. This Letter may motivate electrical detectio…
The spin Hall magnetoresistance (SMR) allows to investigate the magnetic textures of magnetically ordered insulators in heterostructures with normal metals by magnetotransport experiments. We here report the observation of the SMR in in-situ prepared ferromagnetic EuO/W thin film bilayers with magnetically and chemically well-defined interfaces. We characterize the magnetoresistance effects utilizing angle-dependent and field-dependent magnetotransport measurements as a function of temperature. Applying the established SMR model, we derive and quantify the real and imaginary parts of the compl…
Electrical resistivities can be different for charge currents travelling parallel or perpendicular to the magnetization in magnetically ordered conductors or semiconductors, resulting in the well-known planar Hall effect and anisotropic magnetoresistance. Here, we study the analogous anisotropic magnetotransport behavior for magnons in a magnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$. Electrical and thermal magnon injection, and electrical detection methods are used at room temperature with transverse and longitudinal geometries to measure the magnon planar Hall effect and anisotropic magnetoresis…
In bilayers consisting of a normal metal (N) with spin-orbit coupling and a ferromagnet (F), the combination of the spin-Hall effect, the spin-transfer torque, and the inverse spin-Hall effect gives a small correction to the in-plane conductivity of N, which is referred to as spin-Hall magnetoresistance (SMR). We here present a theory of the SMR and the associated off-diagonal conductivity corrections for frequencies up to the terahertz regime. We show that the SMR signal has pronounced singularities at the spin-wave frequencies of F, which identifies it as a potential tool for all-electric sp…
We develop a model of the nonlinear response to a DC electrical current of a two dimensional electron system(2DES) placed on a magnetic field. Based on the exact solution of the Schroedinger equation in arbitrarily strong electric and magnetic fields, and separating the relative and guiding center coordinates, a Kubo-like formula for the current is worked out as a response to the impurity scattering. Self-consistent expressions determine the longitudinal and Hall components of the electric field in terms of the DC current. The differential resistivity displays strong Hall field-induced oscilla…
Recent studies evidence the emergence of asymmetric electron transport in layered conductors owing to the interplay between electrical conductivity, magnetization, and the spin Hall or Rashba- Edelstein effects. Here, we investigate the unidirectional magnetoresistance (UMR) caused by the current-induced spin accumulation in Co/Pt and CoCr/Pt bilayers. We identify three competing mechanisms underpinning the resistance asymmetry, namely interface and bulk spin-dependent electron scattering and electron-magnon scattering. Our measurements provide a consistent description of the current, magnetic…
The momentum dependent splitting of spin-bands in an electronic system is known as the "Rashba effect". Systems with the "Rashba effect" possess a Dirac point in momentum space. An electron in a cyclotron orbit enclosing that Dirac point in the reciprocal space gains a "Berry phase". We report here the Shubnikov-de-Haas oscillations (SdH) at the conducting interface of EuO-KTaO$_3$ (KTO). Observed SdH oscillations suggest the presence of two Fermi surfaces. For both the Fermi surfaces, we have seen the presence of a non-trivial "Berry phase" suggesting that the surfaces enclose the "Dirac poin…
We report a simple route to generate magnetotransport data that results in fractional quantum Hall plateaus in the conductance. Ingredients to the generating model are conducting tiles with integer quantum Hall effect and metallic linkers, further Kirchhoff rules. When connecting few identical tiles in a mosaic, fractional steps occur in the conductance values. Richer spectra representing several fractions occur when the tiles are parametrically varied. Parts of the simulation data are supported with purposefully designed graphene mosaics in high magnetic fields. The findings emphasize that th…
Orbital Hall conductivity and orbital diffusion length of Vanadium thin films by Hanle magnetoresistance
CIC NanoGUNE（纳米技术联合研究中心）；UPV-EHU（巴斯克地区国立大学）；Centro de Física de Materiales CSIC-UPV/EHU（材料物理中心）；IKERBASQUE, Basque Foundation for Science（伊克尔巴斯科奎，巴斯克科学基金会）
Van der Waals materials are a new platform to study two-dimensional systems, including magnetic order. Since the number of spins is relatively small, measuring the magnetization is challenging. Here we report spin Hall magnetoresistance (SMR) up to room temperature caused by the magnetic surface texture of exfoliated flakes of magnetic van der Waals materials. For the antiferromagnet FePS3 the SMR amounts to 0.1 % for an applied magnetic field of 7 T at 5 K which implies a substantial canting of the magnetic moments relative to the colinear antiferromagnetic order. The canting is substantial e…
We consider a microscopic theory for the spin Hall magnetoresistance (SMR). We generally formulate a spin conductance at an interface between a normal metal and a magnetic insulator in terms of spin susceptibilities. We reveal that SMR is composed of static and dynamic parts. The static part, which is almost independent of the temperature, originates from spin flip caused by an interfacial exchange coupling. However, the dynamic part, which is induced by the creation or annihilation of magnons, has an opposite sign from the static part. By the spin-wave approximation, we predict that the latte…
Unidirectional spin Hall magnetoresistance (USMR) has been widely reported in the heavy metal / ferromagnet (HM/FM) bilayer systems. We observe the USMR in the Pt/α-Fe2O3 bilayers where the α-Fe2O3 is an antiferromagnetic (AFM) insulator. Systematic field and temperature dependent measurements confirm the magnonic origin of the USMR. The appearance of AFM-USMR is driven by the imbalance of creation and annihilation of AFM magnons by spin orbit torque due to thermal random field. However, unlike its ferromagnetic counterpart, theoretical modeling reveals that the USMR in Pt/α-Fe2O3 is determine…
We study the evolution of magnetoresistance with temperature in thin film bilayers consisting of platinum and the antiferromagnet Cr$_2$O$_3$ with its easy axis out of the plane. We vary the temperature from 20 - 60°C, close to the Néel temperature of Cr$_2$O$_3$ of approximately 37°C. The magnetoresistive response is recorded during rotations of the external magnetic field in three mutually orthogonal planes. A large magnetoresistance having a symmetry consistent with a positive spin Hall magnetoresistance is observed in the paramagnetic phase of the Cr$_2$O$_3$, which however vanishes when c…
The effective field torque of an yttrium-iron-garnet film on the spin accumulation in an attached Pt film is measured by the spin-Hall magnetoresistance (SMR). As a result, the magnetization direction of a ferromagnetic insulating layer can be measured electrically. Experimental transverse and longitudinal resistances are well described by the theoretical model of SMR in terms of the direct and inverse spin-Hall effect, for different Pt thicknesses [3, 4, 8 and 35nm]. Adopting a spin-Hall angle of Pt $θ_{SH}=0.08$, we obtain the spin diffusion length of Pt ($λ=1.1\pm0.3$nm) as well as the real…
The spin Hall magnetoresistance (SMR) effect arises from spin-transfer processes across the interface between a spin Hall active metal and an insulating magnet. While the SMR response of ferrimagnetic and antiferromagnetic insulators has been studied extensively, the SMR of a paramagnetic spin ensemble is not well established. Thus, we investigate herein the magnetoresistive response of as-deposited yttrium iron garnet/platinum thin film bilayers as a function of the orientation and the amplitude of an externally applied magnetic field. Structural and magnetic characterization show no evidence…
The occurrence of Spin-Hall Magnetoresistance (SMR) in platinum (Pt) on top of yttrium iron garnet (YIG) has been investigated, for both in-plane and out-of-plane applied magnetic fields and for different Pt thicknesses [3, 4, 8 and 35nm]. Our experiments show that the SMR signal directly depends on the in-plane and out-of-plane magnetization directions of the YIG. This confirms the theoretical description, where the SMR occurs due to the interplay of spin-orbit interaction in the Pt and spin-mixing at the YIG/Pt interface. Additionally, the sensitivity of the SMR and spin pumping signals on t…
When a three-dimensional (3D) ferromagnetic topological insulator thin film is magnetized out-of-plane, conduction ideally occurs through dissipationless, one-dimensional (1D) chiral states that are characterized by a quantized, zero-field Hall conductance. The recent realization of this phenomenon - the quantum anomalous Hall effect - provides a conceptually new platform for studies of edge-state transport, distinct from the more extensively studied integer and fractional quantum Hall effects that arise from Landau level formation. An important question arises in this context: how do these 1D…
We study the spin Hall magnetoresistance (SMR) and the magnon spin transport (MST) in Pt/Y3Fe5O12(YIG)-based devices with intentionally modified interfaces. Our measurements show that the surface treatment of the YIG film results in a slight enhancement of the spin-mixing conductance and an extraordinary increase in the efficiency of the spin-to-magnon excitations at room temperature. The surface of the YIG film develops a surface magnetic frustration at low temperatures, causing a sign change of the SMR and a dramatic suppression of the MST. Our results evidence that SMR and MST could be used…
We show that when bulk graphene breaks into n-type and p-type puddles, the in-plane resistivity becomes strongly field dependent in the presence of a perpendicular magnetic field, even if homoge- neous graphene has a field-independent resistivity. We calculate the longitudinal resistivity ρ_{xx} and Hall resistivity ρ_{xy} as a function of field for this system, using the effective-medium approximation. The conductivity tensors of the individual puddles are calculated using a Boltzmann approach suit- able for the band structure of graphene near the Dirac points. The resulting resistivity agree…
