The spin Hall magnetoresistance (SMR) allows to investigate the magnetic textures of magnetically ordered insulators in heterostructures with normal metals by magnetotransport experiments. We here report the observation of the SMR in in-situ prepared ferromagnetic EuO/W thin film bilayers with magnetically and chemically well-defined interfaces. We characterize the magnetoresistance effects utilizing angle-dependent and field-dependent magnetotransport measurements as a function of temperature. Applying the established SMR model, we derive and quantify the real and imaginary parts of the complex spin mixing interface conductance. We find that the imaginary part is by one order of magnitude larger than the real part. Both decrease with increasing temperature. This reduction is in agreement with thermal fluctuations in the ferromagnet.
We report on the angular and field dependence of the magnetoresistance (MR) in bilayers of Pt/EuO_{1-x} thin films, measured in both in-plane and out-of-plane geometries at different temperatures (T). Presence of oxygen vacancies manifested by a metal-insulator transition as well as a high-T ferromagnet to paramagnet transition (T_P) were observed in the bilayers. The Anisotropic Magnetoresistance (AMR) could be extracted in the entire T-range, even above T_P, exhibiting two sign crossovers. We attribute its T-evolution to the rotation of easy axis direction from a high-T out-of-plane to a low…
The momentum dependent splitting of spin-bands in an electronic system is known as the "Rashba effect". Systems with the "Rashba effect" possess a Dirac point in momentum space. An electron in a cyclotron orbit enclosing that Dirac point in the reciprocal space gains a "Berry phase". We report here the Shubnikov-de-Haas oscillations (SdH) at the conducting interface of EuO-KTaO$_3$ (KTO). Observed SdH oscillations suggest the presence of two Fermi surfaces. For both the Fermi surfaces, we have seen the presence of a non-trivial "Berry phase" suggesting that the surfaces enclose the "Dirac poin…
Topological insulator is composed of an insulating bulk state and time reversal symmetry protected two-dimensional surface states. One of the characteristics of the surface states is the locking between electron momentum and spin orientation. Here, we report a novel in-plane anisotropic magnetoresistance in topological insulator Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures. To explain the novel effect, we propose that the Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructure forms a spin-valve or Giant magnetoresistance device due to spin-momentum locking. The novel in-plane anisotropic magnetoresistance ca…
Due to its two dimensional nature, ferromagnetism and charge doping can be induced by proximity and electric field effects in graphene. Taking advantage of these features, we propose an electrically engineered spin valve by combining two magnetic insulators (using EuO, EuS, or YIG) and three coating gates. Two top gates are used to cancel the heavy electron doping's in these magnets and one back gate is used to utilize the normal or half-metallic ferromagnetisms. We demonstrate that, when the second top gate is tuned to utilize the insulating or spin insulating states, huge giant magnetoresist…
We demonstrate the existence of Giant proximity magnetoresistance (PMR) effect in a graphene spin valve where spin polarization is induced by a nearby magnetic insulator. PMR calculations were performed for yttrium iron garnet (YIG), cobalt ferrite (CFO), and two europium chalcogenides EuO and EuS. We find a significant PMR (up to 100%) values defined as a relative change of graphene conductance with respect to parallel and antiparallel alignment of two proximity induced magnetic regions within graphene. Namely, for high Curie temperature (Tc) CFO and YIG insulators which are particularly impo…
In a heterostructure of graphene and the ferromagnetic insulator EuO, the Eu atoms induce proximity exchange and inter-valley interactions in the graphene layer. Constrained by the lattice symmetries, and guided by ab initio calculations, a model Hamiltonian is constructed that describes the low-energy bands. Band parameters such as proximity induced exchange splitting, spin orbit coupling, and inter-valley interaction are determined. Calculations of the Chern number identify the conditions under which the hetero-structures exhibit topologically non-trivial bands that give rise to the quantum …
We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi/Ag/CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the …
Using a quantum theory including spin-splitting effect in diluted magnetic semiconductors, we study the dependence of tunneling magnetoresistance (TMR) on barrier thickness, temperature and applied voltage in GaMnAs/GaAs/GaMnAs heterostructures. TMR ratios more than 65% are obtained at zero temperature, when one GaAs monolayer ($\approx$ 0.565 nm) is used as a tunnel barrier. It is also shown that the TMR ratio decreases rapidly with increasing the barrier thickness and applied voltage, however at high voltages and low thicknesses, the TMR first increases and then decreases. Our model calculat…
The magnetoresistance oscillations in GaAs/Al$_x$Ga$_{1-x}$As heterostructures induced by millimeterwave radiation recently observed by Zudov et al. [Phys. Rev. B {\bf 64}, 201311 (2001)] is theoretically reproduced by introducing a model based on the finite temperature Fermi liquid theory of dc conductivity and the electron reservoir hypothesis. The obtained oscillation patterns show excellent agreement with the experimental result by Zudov et al. and are independent of the polarization of the radiation field in accordance with the experimental observation by Smet et al. [Phys. Rev. Lett. {\b…
We study the magnetotransport in small hybrid junctions formed by high-mobility GaInAs/InP heterostructures coupled to superconducting (S) and normal metal (N) terminals. Highly transmissive superconducting contacts to a two-dimensional electron gas (2DEG) located in a GaInAs/InP heterostructure are realized by using a Au/NbN layer system. The magnetoresistance of the S/2DEG/N structures is studied as a function of dc bias current and temperature. At bias currents below a critical value, the resistance of the S/2DEG/N structures develops a strong oscillatory dependence on the magnetic field, w…
The large spin orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments at room temperature. However, memory or logic spin devices based upon such switching require a non-optimal three terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two terminal device geometry is now possible by exploiting the recent discovery of a unidirectional spin Hall magnetoresista…
In the present work we have investigated the transport properties in a number of Si/SiGe samples with square antidot lattices of different periods. In samples with lattice periods equal to 700 nm and 850 nm we have observed the conventional low-field commensurability magnetoresistance peaks consistent with the previous observations in GaAs/AlGaAs and Si/SiGe samples with antidot lattices. In samples with a 600 nm lattice period a new series of well-developed magnetoresistance oscillations has been found beyond the last commensurability peak which are supposed to originate from periodic skippin…
Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here we report novel multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance which is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. These…
Unidirectional spin Hall magnetoresistance (USMR) has been widely reported in the heavy metal / ferromagnet (HM/FM) bilayer systems. We observe the USMR in the Pt/α-Fe2O3 bilayers where the α-Fe2O3 is an antiferromagnetic (AFM) insulator. Systematic field and temperature dependent measurements confirm the magnonic origin of the USMR. The appearance of AFM-USMR is driven by the imbalance of creation and annihilation of AFM magnons by spin orbit torque due to thermal random field. However, unlike its ferromagnetic counterpart, theoretical modeling reveals that the USMR in Pt/α-Fe2O3 is determine…
We present a comprehensive study of the temperature (T) dependence of the longitudinal spin Seebeck effect (LSSE) in Pt/EuO_{1-x} and Pt/La2NiMnO6 (LNMO) hybrid structures across their Curie temperatures (Tc). Both systems host ferromagnetic interaction below Tc, hence present optimal conditions for testing magnon spin current based theories against ferrimagnetic YIG. Notably, we observe an anomalous Nernst effect (ANE) generated voltage in bare EuO_{1-x}, however, we find LSSE predominates the thermal signals in the bilayers with Pt. The T-dependence of the LSSE in small T-range near Tc could…
The spin Hall magnetoresistance (SMR) effect arises from spin-transfer processes across the interface between a spin Hall active metal and an insulating magnet. While the SMR response of ferrimagnetic and antiferromagnetic insulators has been studied extensively, the SMR of a paramagnetic spin ensemble is not well established. Thus, we investigate herein the magnetoresistive response of as-deposited yttrium iron garnet/platinum thin film bilayers as a function of the orientation and the amplitude of an externally applied magnetic field. Structural and magnetic characterization show no evidence…
Thanks to its unique symmetry, the unidirectional spin Hall and Rashba-Edelstein magnetoresistance (USRMR) is of great fundamental and practical interest, particularly in the context of reading magnetization states in two-terminal spin-orbit torque switching memory and logic devices. Recent studies show that topological insulators could improve USRMR amplitude. However, the topological insulator device configurations studied so far in this context, namely ferromagnetic metal/topological insulator bilayers and magnetically doped topological insulators, suffer from current shunting by the metall…
A large unidirectional magnetoresistance (UMR) ratio of UMR/$R_{xx}\sim$ $0.36\%$ is found in W/CoFeB metallic bilayer heterostructures at room temperature. Three different regimes in terms of the current dependence of UMR ratio are identified: A spin-dependent-scattering mechanism regime at small current densities $J \sim$ $10$$^{9}$A/m$^{2}$ (UMR ratio $\propto$ $J$), a spin-magnon-interaction mechanism regime at intermediate $J \sim$ $10$$^{10}$A/m$^{2}$ (UMR ratio $\propto$ $J$$^{3}$), and a spin-transfer torque (STT) regime at $J \sim$ $10$$^{11}$A/m$^{2}$ (UMR ratio independent of $J$). …
Using the nonequilibrium Green function formalism combined with density functional theory, we study finite-bias quantum transport in Ni/Gr_n/Ni vertical heterostructures where $n$ graphene layers are sandwiched between two semi-infinite Ni(111) electrodes. We find that recently predicted "pessimistic" magnetoresistance of 100% for $n \ge 5$ junctions at zero bias voltage $V_b \rightarrow 0$, persists up to $V_b \simeq 0.4$ V, which makes such devices promising for spin-torque-based device applications. In addition, for parallel orientations of the Ni magnetizations, the $n=5$ junction exhibits…
We study the transport properties of the two-dimensional electron gas in AlGaAs/GaAs heterostructures in parallel to the interface magnetic fields at low temperatures. The magnetoresistance in the metallic phase is found to be positive and weakly anisotropic with respect to the orientation of the in-plane magnetic field and the current through the sample. At low electron densities ($n_s< 5\times 10^{10}$ cm$^{-2}$) the experimental data can be described adequately within spin-related approach while at high $n_s$ the magnetoresistance mechanism changes as inferred from $n_s$-independence of the…
Understanding magnetoresistance, the change in electrical resistance upon an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here, we report an extremely large local magnetoresistance of ~ 2,000% at 400 K and a non-local magnetoresistance of > 90,000% in 9 T at 300 K in few-layer graphene/boron-nitride heterostructures. The local magnetoresistance is understood to arise from…
We explore proximity-induced magnetocaloric effect (MCE) on transition metal dichalcogenides, focusing on a two-dimensional (2D) MoTe$_2$ monolayer deposited on a ferromagnetic semiconductor EuO substrate connected to a heat source. We model this heterostructure using a tight-binding model, incorporating exchange and Rashba fields induced by proximity to EuO, and including temperature through Fermi statistics. The MCE is induced on the 2D MoTe$_2$ layer due to the EuO substrate, revealing large spin-polarized entropy changes for energies out of the band gap of the MoTe$_2$-EuO system. By gatin…
We have studied the electron transport in SiO${}_2$(Co)/GaAs and SiO${}_2$(Co)/Si heterostructures, where the SiO${}_2$(Co) structure is the granular SiO${}_2$ film with Co nanoparticles. In SiO${}_2$(Co)/GaAs heterostructures giant magnetoresistance effect is observed. The effect has positive values, is expressed, when electrons are injected from the granular film into the GaAs semiconductor, and has the temperature-peak type character. The temperature location of the effect depends on the Co concentration and can be shifted by the applied electrical field. For the SiO${}_2$(Co)/GaAs heterost…
We study the properties of heterostructures formed by two layers of diluted magnetic semiconductor separated by a nonmagnetic semiconductor layer. We find that there is a RKKY-type exchange coupling between the magnetic layers that oscilles between ferromagnetic and antiferromagnetic as a function of the different parameters in the problem. The different transport properties of these phases make that this heterostructure presents strong magnetoresistive effects. The coupling can be also modified by an electric field. We propose that it is possible to alter dramatically the electrical resistanc…
We show a large magnetoresistance(MR) effect in a graphene heterostructure consisting of an metallic(M) and semiconductor(SC)-type armchair-graphene-nanoribbon(aGNR). In the heterostructure, the transmission across the first subband of the SC-aGNR and M-aGNR is forbidden under zero magnetic-field, due to the orthogonality of the wavefunctions. A finite magnetic-field introduces the quantum hall-like effect, which distorts the wavefunctions. Thus, a finite transmission occurs across the heterojunction, giving rise to a large MR effect. We study the dependence of this MR on temperature and elect…
Angle-Dependent Magnetoresistance Induced by Interface-Generated Spin Current in RuO$_2$/Permalloy Heterostructures
Institute of Physics, Johannes Gutenberg-University Mainz（美因茨约翰内斯·古腾堡大学物理研究所）；Department of Physics, Indiana University（印第安纳大学物理系）；Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University（比勒费尔德大学自旋电子材料与器件中心）；Department of Physics, Center for Quantum Spintronics, Norwegian University of Science and Technology（挪威科技大学量子自旋电子学中心物理系）
We study the anomalous Hall-like effect (AHLE) and the effective anisotropic magnetoresistance (EAMR) in antiferromagnetic γ -IrMn3/Y3Fe5O12(YIG) and Pt/YIG heterostructures. For γ -IrMn3/YIG, the EAMR and the AHLE resistivity change sign with temperature due to the competition between the spin Hall magnetoresistance (SMR) and the magnetic proximity effect (MPE) induced by the interfacial antiferromagnetic uncompensated magnetic moment. In contrast, for Pt/YIG the AHLE resistivity changes sign with temperature whereas no sign change is observed in the EAMR. This is because the MPE and the SMR …
The spin Hall effect in a heavy metal thin film allows to probe the magnetic properties of an adjacent magnetic insulator via magnetotransport measurements. Here, we investigate the magnetoresistive response of yttrium iron garnet/platinum heterostructures from room temperature to beyond the Curie temperature $T_\mathrm{C, YIG} \approx 560\,\mathrm{K}$ of the ferrimagnetic insulator. We find that the amplitude of the (local) spin Hall magnetoresistance decreases monotonically from $300\,\mathrm{K}$ towards $T_\mathrm{C}$, mimicking the evolution of the saturation magnetization of yttrium iron …
We report the fabrication of one-dimensional (1D) ferromagnetic edge contacts to two-dimensional (2D) graphene/h-BN heterostructures. While aiming to study spin injection/detection with 1D edge contacts, a spurious magnetoresistance signal was observed, which is found to originate from the local Hall effect in graphene due to fringe fields from ferromagnetic edge contacts and in the presence of charge current spreading in the nonlocal measurement configuration. Such behavior has been confirmed by the absence of a Hanle signal and gate-dependent magnetoresistance measurements that reveal a chan…
We investigate the spin Hall magnetoresistance in thin film bilayer heterostructures of the heavy metal Pt and the antiferromagnetic insulator NiO. While rotating an external magnetic field in the easy plane of NiO, we record the longitudinal and the transverse resistivity of the Pt layer and observe an amplitude modulation consistent with the spin Hall magnetoresistance. In comparison to Pt on collinear ferrimagnets, the modulation is phase shifted by 90° and its amplitude strongly increases with the magnitude of the magnetic field. We explain the observed magnetic field-dependence of the spi…
We study the impact of Ga ion exposure on the local and non-local magnetotransport response in heterostructures of the ferrimagnetic insulator yttrium iron garnet and platinum. In particular, we cut the yttrium iron garnet layer in between two electrically separated wires of platinum using a Ga ion beam, and study the ensuing changes in the magnetoresistive response. We find that the non-local magnetoresistance signal vanishes when the yttrium iron garnet film between the Pt wires is fully cut, although the local spin Hall magnetoresistance signal remains finite. This observation corroborates …
We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP) configuration in (Ga,Fe)Sb / InAs (thickness $t_\mathrm{InAs}$ nm) / (Ga,Fe)Sb trilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature ($T_\mathrm{C}$). An MR curve with an open minor loop is clearly observed at 3.7 K in a sample with $t_\mathrm{InAs}$ = 3 nm, which originates from the parallel - antiparallel magnetization switching of the (Ga,Fe)Sb layers and spin-dependent scattering at the (Ga,Fe)Sb / InAs interfaces. The MR ratio increases (from 0.03 to 1.6%) with…
Quantum corrections to the conductivity due to the weak localization (WL) and the disorder-modified electron-electron interaction (EEI) are investigated for the high-mobility multilayer p-Ge/Ge1-xSix heterostructures at T = (0.1 - 20.0)K in magnetic field B up to 1.5T. Negative magnetoresistance with logarithmic dependence on T and linear in B^2 is observed for B >= 0.1T. Such a behavior is attributed to the interplay of the classical cyclotron motion and the EEI effect. The Hartree part of the interaction constant is estimated (F_/sigma = 0.44) and the WL and EEI contributions to the total qu…
We investigate the spin Hall magnetoresistance (SMR) at room temperature in thin film heterostructures of antiferromagnetic, insulating, (0001)-oriented alpha-Fe2O3 (hematite) and Pt. We measure their longitudinal and transverse resistivities while rotating an applied magnetic field of up to 17T in three orthogonal planes. For out-of-plane magnetotransport measurements, we find indications for a multidomain antiferromagnetic configuration whenever the field is aligned along the film normal. For in-plane field rotations, we clearly observe a sinusoidal resistivity oscillation characteristic for…
Spin-dependent transport in a full van der Waals (vdW) giant magnetoresistance (GMR) junctions with the structure of Fe3GeTe2/XTe2/Fe3GeTe2 (X = Pt, Pd) has been investigated by using first-principles calculations. The ballistic conductance, magnetoresistance (MR) and resistance-area product (RA) have been calculated in a current-perpendicular-to-plane (CPP) geometry. A giant magnetoresistance of around 2000% and RA less than 0.3 Ω μm2 have been found in the proposed vdW CPP GMR. In addition, the spin-orbit coupling effect on transport and anisotropy magnetoresistance (AMR) has also been inves…
Van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next generation spintronic devices. When layered with non-magnetic vdW materials, such as graphene and/or topological insulators, vdW heterostructures can be assembled (with no requirement for lattice matching) to provide otherwise unattainable device structures and functionalities. We report a hitherto rarely seen antisymmetric magnetoresistance (MR) effect in van der Waals heterostructured Fe3GeTe2/graphite/Fe3GeTe2 devices. Unlike conventional giant magnetoresistance (GMR) which …
We report on the results of investigation the conductivity and magnetoresistance (MR) temperature dependencies for the two strained multilayer p-type Ge/Ge_{1-x}Si_x heterostructures. The usual logarithmic temperature dependencies for zero magnetic field conductivity due to the weak localization (WL) and electron- electron interaction (EEI) effects take place in both samples. For one of the samples the negative MR is observed in a whole range of magnetic fields up to ~1T at T <=12K, but for the other sample the MR transforms from the negative to positive at B >= 0.2T and T >=1.3K. We attribute…
Using a combination of magnetometry and magnetotransport techniques, we studied temperature and magnetic field behavior of magnetization in Py/Gd heterostructures. It was shown quantitatively that proximity with Py enhances magnetic order of Gd. Micromagnetic simulations demonstrate that a spin-flop transition observed in a Py/Gd bilayer is due to exchange-spring rotation of magnetization in the Gd layer. Transport measurements show that the magnetoresistance of a [Py(2 nm)/Gd(2 nm)]25 multilayer changes sign at the compensation temperature and below 20 K. The positive magnetoresistance above …
We conducted a systematic angular dependence study of nonlinear magnetoresistance in NiFe/Pt bilayers at variable temperature and field using the Wheatstone bridge method. We successfully disentangled magnon magnetoresistance from other types of magnetoresistances based on their different temperature and field dependences. Both the spin Hall/anisotropic and magnon magnetoresistances contain sine phi and sine 3 phi components with phi the angle between current and magnetization, but they exhibit different field and temperature dependence. The competition between different types of magnetoresist…
We theoretically investigate magnetoresistance (MR) effects in connection with spin filtering in quantum-coherent transport through tunnel junctions based on non-magnetic/semimagnetic heterostructures. We find that spin filtering in conjunction with the suppression/enhancement of the spin-dependent Fermi seas in semimagnetic contacts gives rise to (i) spin-split kinks in the MR of single barriers and (ii) a robust beating pattern in the MR of double barriers with a semimagnetic well. We believe these are unique signatures for quantum filtering.
A concurrent remote sensing and magneto-transport study of the microwave excited two dimensional electron system (2DES) at liquid Helium temperatures has been carried out using a carbon detector to remotely sense the microwave activity of the 2D electron system in the GaAs/AlGaAs heterostructure during conventional magnetotransport measurements. Various correlations are observed and reported between the oscillatory magnetotransport and the remotely sensed reflection. In addition, the oscillatory remotely sensed signal is shown to exhibit a power law type variation in its amplitude, similar to …
It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the ferromagnetic layer has in-plane magnetic anisotropy, probing such switching phenomenon typically relies on tunneling magnetoresistance measurement of nano-sized magnetic tunnel junctions, differential planar Hall voltage measurement, or Kerr imaging approaches. We show that in magnetic heterostructures with spin Hall metals, there exist current-induced in-plane spin Ha…
The magnetic proximity effect (MPE), ferromagnetic coupling at the interface of magnetically dissimilar layers, attracts much attention as a promising pathway for introducing ferromagnetism into a high-mobility non-magnetic conducting channel. Recently, our group found giant proximity magnetoresistance (PMR), which is caused by MPE at an interface between a non-magnetic semiconductor InAs quantum well (QW) layer and a ferromagnetic semiconductor (Ga,Fe)Sb layer. The MPE in the non-magnetic semiconductor can be modulated by applying a gate voltage and controlling the penetration of the electron…
STM based magnetotransport measurements of epitaxial La$_{0.7}$Sr$_{0.3}$MnO$_3$ 32 nm thick films with and without an internal LaMnO$_3$ layer (0-8 nm thick) grown on Nb doped SrTiO$_3$ are presented. The measurements reveal two types of low field magnetoresistance (LFMR) with a magnitude of $\sim 0.1-1.5\%$. One LFMR contribution is identified as a conventional grain boundary/domain wall scattering through the symmetric I-V characteristics, high dependence on tip placements and insensitivity to introduction of LaMnO$_3$ layers. The other contribution originates from the reverse biased Nb dop…
We present a comprehensive study of the low-field magnetoresistance in carbon doped p-type GaAs/AlGaAs heterostructures aiming at the investigation of spin-orbit interaction effects. The following signatures of exceptionally strong spin-orbit interactions are simultaneously observed: a beating in the Shubnikov-de Haas oscillations, a classical positive magnetoresistance due to the presence of the two spin-split subbands, and a weak anti-localization dip in the magnetoresistance. The spin-orbit induced splitting of the heavy hole subband at the Fermi level is determined to be around 30% of the …
Theory of weak localization in two-dimensional high-mobility semiconductor systems is developed with allowance for the spin-orbit interaction. The obtained expressions for anomalous magnetoresistance are valid in the whole range of classically weak magnetic fields and for arbitrary strengths of bulk and structural inversion asymmetry contributions to the spin splitting. The theory serves for both diffusive and ballistic regimes of electron propagation taking into account coherent backscattering and nonbackscattering processes. The transition between weak localization and antilocalization regim…
We have studied the domain wall resistance in W/Ta/CoFeB/MgO heterostructures. The Ta layer thickness is varied to control the type of domain walls via changes in the interfacial Dzyaloshinskii Moriya interaction. We find a nearly constant domain wall resistance against the Ta layer thickness. Adding contributions from the anisotropic magnetoresistance, spin Hall magnetoresistance and anomalous Hall effect describe well the domain wall resistance of the thick Ta layer films. However, a discrepancy remains for the thin Ta layer films wherein chiral Néel-like domain walls are found. These result…
Transition-metal oxides (TMOs) exhibit many emergent phenomena ranging from high-temperature super- conductivity and giant magnetoresistance to magnetism and ferroelectricity. When TMOs are interfaced with each other, new multi-functionalities can arise, which are absent in individual components. In this work, we have systematically studied, within a unified double-exchange model, the interfacial magnetic response in layered BiFeO3 (BFO) and La0.7Sr0.3MnO3 (LSMO) heterostructures. The ferromagnetic/antiferromagnetic canting is shown to be enhanced on the interface of BFO by the influence of lo…
We investigate the spin-current transport through antiferromagnetic insulator (AFMI) by means of the spin-Hall magnetoressitance (SMR) over a wide temperature range in Pt/NiO/Y$_3$Fe$_5$O$_{12}$ (Pt/NiO/YIG) heterostructures. By inserting the AFMI NiO layer, the SMR dramatically decreases by decreasing the temperature down to the antiferromagnetically ordered state of NiO, which implies that the AFM order prevents rather than promotes the spin-current transport. On the other hand, the magnetic proximity effect (MPE) on induced Pt moments by YIG, which entangles with the spin-Hall effect (SHE) …
Anisotropic magnetoresistance and negative magnetoresistance for in-plane fields are compared for the LaAlO3 /SrTiO3 interface and the symmetric Nb-doped SrTiO3 heterostructure. Both effects are exceptionally strong in LaAlO3 /SrTiO3 . We analyze their temperature, magnetic field and gate voltage dependencies and find them to arise from a Rashba type spin-orbit coupling with magnetic scatterers that have two contributions to their potential: spin exchange and Coulomb interaction. Atomic spin-orbit coupling is sufficient to explain the small effects observed in Nb-doped SrTiO3 . These results c…
We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al$_{0.3}$Ga$_{0.7}$As barrier into the GaAs buffer layer of a standard modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As heterostructure. The resulting double-well system consists of a nearly rectangular well and of a triangular well coupled by tunneling through the thin barrier. With a proper choice of the barrier parameters one can control the occupancy of the two wells and of the two lowest (bonding and antibonding) subbands. The electron properties can…
