In this work, we calculate the electron and the current density distributions both at the edges and the bulk of a two dimensional electron system, focusing on ideal and non-ideal contacts. A three dimensional Poisson equation is solved self-consistently to obtain the potential profile in the absence of an external magnetic field considering a Hall bar defined both by gates (contacts) and etching (lateral confinement). In the presence of a perpendicular magnetic field, we obtain the spatial distribution of the incompressible strips, taking into account the electron-electron interactions within the Thomas-Fermi approximation. Using a local version of Ohm's law, together with a relevant conductivity model, we also calculate the current distribution. We observe that the incompressible strips can reside either on the edge or at the bulk depending on the field strength. Our numerical results show that, due to a density poor region just in front of the contacts, the incompressible strips do not penetrate to the injection region when considering non-ideal contact configuration. Such a non-ideal contact is in strong contrast with the conventional edge channel pictures, hence has a strong influence on transport. We also take into account heating effects in a phenomenological manner and propose a current injection mechanism from the compressible regions to the incompressible regions. The model presented here perfectly agrees with the local probe experiments all together with the formation of hot-spots.
Ground-plane screening of Coulomb interactions in two-dimensional systems: How effectively can one two-dimensional system screen interactions in another?
To develop next-generation electronics and high efficiency energy-harvesting devices, it is crucial to understand how charge and heat are transported at the nanoscale. Metallic atomic-size contacts are ideal systems to probe the quantum limits of transport. The thermal and electrical conductance of gold atomic contacts has been recently proven to be quantized at room temperature. However, a big experimental challenge in such measurements is represented by the fast breaking dynamics of metallic junctions at room temperature, which can exceed the typical response time of the thermal measurement.…
Hot carriers produced from the decay of localized surface plasmons in metallic nanoparticles are intensely studied because of their optoelectronic, photovoltaic and photocatalytic applications. From a classical perspective, plasmons are coherent oscillations of the electrons in the nanoparticle, but their quantized nature comes to the fore in the novel field of quantum plasmonics. In this work, we introduce a quantum-mechanical material-specific approach for describing the decay of single quantized plasmons into hot electrons and holes. We find that hot carrier generation rates differ signific…
We investigate a hybrid metallic island / single dopant electron pump based on fully-depleted silicon on insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used control the resonance conditions. Applying radio frequency signals to the gates, non-adiabatic quantized electron pumping is achieved. A simple deterministic model is presented and confirmed by comparing measurements with simulations.
According to the hydrodynamic Drude model, surface-plasmon resonances of metallic nanostructures blueshift owing to the nonlocal response of the metal's electron gas. The screening length characterising the nonlocal effect is often small relative to the overall dimensions of the metallic structure, which enables us to derive a coarse-grained nonlocal description using matched asymptotic expansions; a perturbation theory for the blueshifts of arbitrary shaped nanometallic structures is then developed. The effect of nonlocality is not always a perturbation and we present a detailed analysis of t…
Recently,a half-quantized Hall conductance (HQHC) plateau is experimentally observed in a semi-magnetic topological insulator heterostructure. However,the heterostructure is metallic with a nonzero longitudinal conductance, which contradicts the common belief that quantized Hall conductance is usually observed in insulators.In this work,we systematically study the surface transport of the semi-magnetic topological insulator with both gapped and gapless Dirac surfaces in the presence of dephasing process.In particular, we reveal that the HQHC is directly related to the half-quantized chiral cur…
Magnetoplasmons on graphene edge in quantizing magnetic field are investigated at different Landau level filling factors. To find the mode frequency, the optical conductivity tensor of disordered graphene in magnetic field is calculated in the self-consistent Born approximation, and the nonlocal electromagnetic problem is solved using the Wiener-Hopf method. Magnetoplasmon dispersion relations, velocities and attenuation lengths are studied numerically and analytically with taking into account the screening by metallic gate and the energy dissipation in graphene. The magnetoplasmon velocity de…
Electron-electron interactions play a critical role in many condensed matter phenomena, and it is tempting to find a way to control them by changing the interactions' strength. One possible approach is to place a studied system in proximity of a metal, which induces additional screening and hence suppresses electron interactions. Here, using devices with atomically-thin gate dielectrics and atomically-flat metallic gates, we measure the electron-electron scattering length in graphene and report qualitative deviations from the standard behavior. The changes induced by screening become important…
With the recent experimental verification that ferroelectric lattice distortions survive in the metallic phase of some materials, there is a desire to create devices that are both switchable and take advantage of the novel functionalities afforded by polar interfaces. In this work, we explore a simple model for such an interface and demonstrate a mechanism by which a metallic ferroelectric substrate may be switched by a bias voltage. This finding is in contrast to the reasonable expectation that hysteresis is prevented by screening of external fields in ferroelectric metals. Instead, the elect…
Comment on ``Quantum Suppression of Shot Noise in Atom-Size Metallic Contacts''
在最近的一封信（物理Rev.Lett. 82，1526（1999）），van den Brom和van Ruitenbeek发现在电导接近$G_0=2e^2/h$的整数倍的原子大小的金接触中散粒噪声的显著抑制，明确地揭示了电子输运的量子化性质。然而，他们引入的用于描述部分开放电导通道对散粒噪声的贡献的自组织模型无法拟合其散粒噪声数据的最大值或最小值。在这里我们指出，具有无序的量子限制电子模型定量地再现了它们的测量结果。
The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 heterointerface based on the modulation-doped amorphous-LaAlO$_{3}$/SrTiO$_{3}$ heterostructure, which exhibits both high electron mobility exceeding 10000 cm$^{2}$/Vs and low carrier density on the or…
Density of quasiparticle states for a two-dimensional disordered system: Metallic, insulating, and critical behavior in the class D thermal quantum Hall effect
Ferroelectricity in Atomically Thin Metallic TaNiTe$_5$ with Ultrahigh Carrier Density
State Key Laboratory of Micro-nano Engineering Science, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University（上海交通大学物理与天文学院微纳工程科学国家重点实验室人工结构与量子控制教育部重点实验室）；School of Physical Science and Technology, Ningbo University（宁波大学物理科学与技术学院）；School of Physics, Zhejiang University of Technology（浙江工业大学物理学院）；Tsung-Dao Lee Institute, Shanghai Jiao Tong University（上海交通大学李政道研究所）；Collaborative Innovation Center of Advanced Microstructures（先进微结构协同创新中心）
